scholarly journals Effects of Electron Irradiation on Optical Properties of Bismuth-Doped Phosphosilicate Fiber

2020 ◽  
Author(s):  
Alexander V. Kir’yanov ◽  
Arindam Halder
Keyword(s):  
Optical Properties ◽  
Electron Irradiation ◽  
Near Infrared ◽  
Stokes Shift ◽  
High Energy ◽  
Active Centers ◽  
Laser Applications ◽  
High Energy Electrons ◽  
Phosphosilicate Fiber ◽  
Overall Resistance

The basic optical properties of yttrium-phosphosilicate fiber doped with bismuth (Bi) are assessed in both pristine state and that established after bombardment by a beam of high-energy electrons. The fiber has been developed and fabricated with a target to use it for laser applications in visible/near-infrared (VIS/NIR) domain. In this chapter, the main attention is paid to the dramatic changes in absorption spectra of the fiber under electron irradiation. Meanwhile, we reveal its overall resistance to irradiation in terms of emissive potential and bleaching contrast at excitation into the absorption bands of bismuth-related active centers. Besides, we report a new effect of large dose-dependent Stokes shift, experienced by the fiber’s cutoff wavelength, which arises due to refractive index rise in its core area. The laws obeyed by the fiber’s characteristics vs. dose are examined for possible applications in dosimetry.

scholarly journals Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1373
Author(s):  
Fadis F. Murzakhanov ◽  
Boris V. Yavkin ◽  
Georgiy V. Mamin ◽  
Sergei B. Orlinskii ◽  
Ivan E. Mumdzhi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Irradiation ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Optical Excitation ◽  
High Energy ◽  
Infrared Range ◽  
Zero Field ◽  
Zero Field Splitting ◽  
Spin Resonance

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.

Optical properties of hemicyanines with terminal amino groups and their applications in near-infrared fluorescent imaging of nucleoli

2014 ◽  
Vol 2 (40) ◽  
pp. 7065-7072 ◽  
Author(s):  
Jia-Tao Miao ◽  
Chen Fan ◽  
Ru Sun ◽  
Yu-Jie Xu ◽  
Jian-Feng Ge
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
Water Solubility ◽  
Stokes Shift ◽  
Fluorescent Imaging ◽  
Amino Groups ◽  
Long Wave ◽  
Terminal Amino ◽  
Wave Emission ◽  
Low Cytotoxicity

A cellular dye with properties of long-wave emission, large Stokes shift, water solubility, low cytotoxicity, and good photostability is reported.

Upconversion lanthanide nanomaterials: basics introduction, synthesis approaches, mechanism and application in photodetector and photovoltaic devices

2021 ◽  
Author(s):  
Baharak Mehrdel ◽  
Ali Nikbakht ◽  
Azlan Abdul Aziz ◽  
Mahmood S. Jameel ◽  
Mohammed Ali Dheyab ◽  
...  
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
Surface Passivation ◽  
Upconversion Emission ◽  
High Energy ◽  
Photovoltaic Devices ◽  
Plasmonic Enhancement ◽  
Host Matrix ◽  
Emission Enhancement ◽  
Improved Performance

Abstract Upconversion (UC) of lanthanide-doped nanostructure has the unique ability to convert low energy infrared (IR) light to high energy photons, which has significant potential for energy conversion applications. This review concisely discusses the basic concepts and fundamental theories of lanthanide nanostructures, synthesis techniques, and enhancement methods of upconversion for photovoltaic and for near-infrared (NIR) photodetector application. In addition, a few examples of lanthanide-doped nanostructures with improved performance were discussed, with particular emphasis on upconversion emission enhancement using coupling plasmon. The use of UC materials has been shown to significantly improve the NIR light-harvesting properties of photovoltaic devices and photocatalytic materials. However, the inefficiency of UC emission also prompted the need for additional modification of the optical properties of UC material. This improvement entailed the proper selection of the host matrix and optimization of the sensitizer and activator concentrations, followed by subjecting the UC material to surface-passivation, plasmonic enhancement, or doping. As expected, improving the optical properties of UC materials can lead to enhanced efficiency of photodetectors and photovoltaic devices.

Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*

2010 ◽  
Vol 77 (5) ◽  
pp. 668-674 ◽  
Author(s):  
A. V. Karotki ◽  
A. V. Mudryi ◽  
M. V. Yakushev ◽  
F. Luckert ◽  
R. Martin
Keyword(s):  
Optical Properties ◽  
High Energy ◽  
Structural And Optical Properties ◽  
High Energy Electrons

Impact of electron irradiation upon optical properties of Bismuth/Yttria codoped phosphosilicate fiber

2020 ◽  
Vol 128 ◽  
pp. 106245
Author(s):  
A.V. Kir'yanov ◽  
A. Halder ◽  
E. Sekiya ◽  
K. Saito ◽  
Y.O. Barmenkov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electron Irradiation ◽  
Phosphosilicate Fiber

scholarly journals Effect of electron irradiation on the 3C-4H transformation in a Co-Fe alloy

1996 ◽  
Vol 54 ◽  
pp. 992-993
Author(s):  
Charles W. Allen ◽  
Hirotaro Mori
Keyword(s):  
Martensitic Transformation ◽  
Electron Irradiation ◽  
Structural Damage ◽  
Terminal Solid Solution ◽  
Martensitic Transformations ◽  
High Energy ◽  
Transformation Mechanism ◽  
Intermediate Phases ◽  
High Energy Electrons ◽  
Kinetics Of

In general, irradiation of materials by high energy electrons, protons or neutrons has been shown to stabilize the existing microstructure against subsequent martensitic transformation. Alloys which have been studied include the binary intermediate phases NiTi and Ni63Al37 and ternary phases between Cu37,5Al62.5 and CU63.6Al36.4 as well as the intermetallic Cu69.01Al17.92 Zn12.17. In these materials, the martensitic transformations are known to be sensitive to small changes in chemical composition and to the degree of long range order. In addition, one should expect the kinetics of martensitic transformations to be sensitive to other forms of structural damage introduced during irradiation also. This spectrum of irradiation-induced phenomena renders the interpretation of results in studies of such concentrated binary and ternary phases rather complicated, therefore.We present here the preliminary results of a study of the effect of electron irradiation on the character of the martensitic transformation in a relatively dilute terminal solid solution of Co+5.75 wt pet Fe, similar in composition to that employed for studies of the transformation mechanism itself.

scholarly journals Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

2005 ◽  
Vol 864 ◽  
Author(s):  
S.X. Li ◽  
K.M. Yu ◽  
R.E. Jones ◽  
J. Wu ◽  
W. Walukiewicz ◽  
...  
Keyword(s):  
Optical Properties ◽  
Composition Range ◽  
High Energy ◽  
Defect Model ◽  
Electrochemical Capacitance ◽  
Electronic And Optical Properties ◽  
Fermi Level Pinning ◽  
High Energy Electrons ◽  
Capacitance Voltage ◽  
Ingan Alloys

AbstractWe have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and 4He+ were used to produce displacement damage doses (Dd) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with Dd and finally saturate after a sufficiently high Dd. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (EFS), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning at EFS.

Crosslinking of Oriented Rubber

1958 ◽  
Vol 31 (1) ◽  
pp. 98-104 ◽  
Author(s):  
A. Charlesby ◽  
E. von Arnim
Keyword(s):  
Elastic Modulus ◽  
Stress Relaxation ◽  
Elastic Properties ◽  
Electron Irradiation ◽  
Main Chain ◽  
High Energy ◽  
Elongation At Break ◽  
High Energy Electrons ◽  
Anisotropic Elastic ◽  
G Value

Abstract Smoked sheet rubber, previously oriented in the calendering process, was crosslinked by exposure to 2 Mev high energy electrons in the absence of vulcanizing agents. Even after annealing, the resultant rubber showed anisotropic elastic properties, having a high elastic modulus and a low elongation at break in the direction of orientation. It is suggested that radiation in addition to crosslinking causes main chain fracture and stress relaxation in stressed molecular chains. The G value for crosslinking (1.05) by electron irradiation agrees well with that (1.1) previously found by elastic measurements of pile irradiated rubber.

scholarly journals Tellurite Glass and Its Application in Lasers

2020 ◽  
Author(s):  
Pengfei Wang ◽  
Shijie Jia ◽  
Xiaosong Lu ◽  
Yuxuan Jiang ◽  
Jibo Yu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Fibers ◽  
Near Infrared ◽  
Tellurite Glass ◽  
Tellurite Glasses ◽  
Laser Applications ◽  
Mid Infrared ◽  
Microcavity Lasers ◽  
Optical Microcavities ◽  
Laser Devices

This chapter provides expert coverage of the physical properties of new noncrystalline solids—tellurite glass and the latest laser applications of the material—offering insights into innovative applications for laser and sensing devices, among others. In particular, there is a focus on specialty optical fibers, supercontinuum generation and laser devices, and luminescence properties for laser applications. This chapter also addresses the fabrication and optical properties and uses of tellurite glasses in optical fibers and optical microcavities, the significance of from near infrared (NIR) to mid-infrared (MIR) emissions and the development of tellurite glass-based microcavity lasers. The important attributes of these tellurite glasses and their applications in lasers were discussed in this chapter.

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