High-performance and self-rectifying resistive random access memory based on SnO2 nanorod array: ZnO nanoparticle structure

2019 ◽  
Vol 12 (12) ◽  
pp. 121002 ◽  
Author(s):  
Qi Liu ◽  
Yang Li ◽  
Wenxiao Wang ◽  
Wenjing Yue ◽  
Song Gao ◽  
...  
Keyword(s):  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Nanorod Array ◽  
Resistive Random Access Memory ◽  
Zno Nanoparticle ◽  
Access Memory ◽  
Sno2 Nanorod ◽  
Nanoparticle Structure

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

High performance perovskite memristor by integrating tip shape contact

2021 ◽  
Author(s):  
Su-Ting Han ◽  
Jiangming Chen ◽  
Zihao Feng ◽  
Mingtao Luo ◽  
Junjie Wang ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Ion Migration ◽  
Halide Perovskite

Resistive random access memory (RRAM) based on hybrid organic-inorganic halide perovskite (HOIP) has recently gained significant interests due to its low activation energy of ion migration. HOIP RRAM has been...

scholarly journals Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 457 ◽  
Author(s):  
Lei Wu ◽  
Hongxia Liu ◽  
Jinfu Lin ◽  
Shulong Wang
Keyword(s):  
Thermal Annealing ◽  
High Performance ◽  
Electrical Characteristic ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Before And After ◽  
Retention Characteristics

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 105 s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.

High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

Nanoscale ◽  
2021 ◽  
Author(s):  
Tariq Aziz ◽  
Shi-Jing Wei ◽  
Yun Sun ◽  
Lai-Peng Ma ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Layer ◽  
Homogeneous Oxidation

The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its...

scholarly journals Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization

2019 ◽  
Vol 11 (26) ◽  
pp. 23659-23666 ◽  
Author(s):  
Giovanni Vescio ◽  
Gemma Martín ◽  
Albert Crespo-Yepes ◽  
Sergi Claramunt ◽  
Daniel Alonso ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Nanoscale Characterization

Flexible one diode–one resistor resistive switching memory arrays on plastic substrates

RSC Advances ◽  
2014 ◽  
Vol 4 (38) ◽  
pp. 20017-20023 ◽  
Author(s):  
Hyeon Gyun Yoo ◽  
Seungjun Kim ◽  
Keon Jae Lee
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Plastic Substrates ◽  
Resistive Switching Memory ◽  
Change Material ◽  
Switching Memory

Flexible one diode–one resistor resistive random access memory (RRAM) with 8 × 8 arrays composed of high-performance silicon diodes and a resistive change material for fully functional flexible memory operation.

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