scholarly journals Electric Properties of Organic-on-Inorganic n-Si/VOPc Heterojunction

2016 ◽  
Vol 11 (2) ◽  
pp. 115 ◽  
Author(s):  
Kh.S. Karimov ◽  
B.F. Irgaziev ◽  
M. Mahroof-Tahir ◽  
I. Qazi ◽  
I. Murtaza ◽  
...  
Keyword(s):  
Thin Films ◽  
Quality Factor ◽  
Electric Properties ◽  
Charge Carriers ◽  
Rectification Ratio ◽  
Saturation Current ◽  
Si Substrate ◽  
Inorganic N ◽  
Mobility Of Charge Carriers ◽  
Reverse Saturation Current

In the current study vanadyl-phthalocyanine (VOPc) thin films were deposited by vacuum evaporation on n-Si substrate resulting in an organic-on-inorganic (n-Si/VOPc) heterojunctions. Ag films were deposited as electrodes. Thicknesses of the VOPc films were in the range of 100-300 nm. The dark I-V characteristics exhibited rectification behavior. The rectification ratio (RR) decreased from 4 to 0.4 as the thickness of the VOPc film decreased. The dark I-V characteristics were simulated by modified Schokley equation and spaace-charge limited currents (SCLC) approach. Investigations were carried out to study the effect of VOPc films thickness on reverse saturation current , diode quality factor and mobility of charge carriers.

scholarly journals Photoconductivity of Thin Films Obtained from a New Type of Polyindole

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 228
Author(s):  
Renat B. Salikhov ◽  
Akhat G. Mustafin ◽  
Ilnur N. Mullagaliev ◽  
Timur R. Salikhov ◽  
Anastasiia N. Andriianova ◽  
...  
Keyword(s):  
Thin Films ◽  
Fluorescence Spectra ◽  
Test Sample ◽  
Charge Carriers ◽  
Transport Layer ◽  
Photoluminescence Spectra ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
New Type ◽  
Current Voltage Characteristics

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.

The impact of morphotropy and polymorphism on electric properties of manganites: the case of Sr0.5Ca0.5Mn1−xVxO3−δ

2020 ◽  
Vol 8 (32) ◽  
pp. 16497-16505 ◽  
Author(s):  
Ekaterina I. Konstantinova ◽  
Ilia A. Leonidov ◽  
Alexey A. Markov ◽  
Rina F. Samigullina ◽  
Andrey V. Chukin ◽  
...  
Keyword(s):  
Electric Properties ◽  
Charge Carriers ◽  
Teller Distortion ◽  
Energy Parameters ◽  
Mobility Of Charge Carriers ◽  
Jahn Teller ◽  
Doped Manganites ◽  
The Impact ◽  
The Relationship ◽  
Jahn Teller Distortion

Unraveling the relationship between temperature, concentration of donor ions, the Jahn–Teller distortion of MnO6 octahedra and energy parameters which define the formation and mobility of charge carriers in electron-doped manganites.

scholarly journals Temperature Dependencies of Electrical Properties of Thin Films Based on PbSnAgTe Solid Solutions

2020 ◽  
Vol 21 (4) ◽  
pp. 640-644
Author(s):  
R.O. Dzumedzey ◽  
Ya.P. Saliy ◽  
I.V. Horichok
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
High Temperatures ◽  
Solid Solutions ◽  
Charge Carriers ◽  
Polycrystalline Films ◽  
Acoustic Phonons ◽  
Scattering Mechanisms ◽  
Mobility Of Charge Carriers ◽  
Thin Polycrystalline

The electrical properties of thin polycrystalline films of solid solutions Pb18Ag2Te20, Pb16Sn2Ag2Te20, and Pb14Sn4Ag2Te20 (LATT) on mica-muscovite substrates have been investigated. The temperature dependencies of concentration and mobility of charge carriers for these condensates are researched. Predominant scattering mechanisms are established. These are scattering on ionized impurities and acoustic phonons at low and high temperatures respectively.

Charge carrier transport in a-Si:H/c-Si heterojunctions

2001 ◽  
Vol 664 ◽  
Author(s):  
Susanne von Aichberger ◽  
Frank Wünsch ◽  
Marinus Kunst
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Space Charge ◽  
Space Charge Region ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Charge Carrier Transport ◽  
Excess Charge ◽  
Si Substrate ◽  
Transient Photoconductivity

ABSTRACTContactless transient photoconductivity measurements of a-Si:H / c-Si heterojunctions are presented. It is shown that n a-Si:H / n c-Si junctions furnish an excellent passivation of the n c-Si surface. For i a-Si:H / n c-Si junctions the passivation is better for thicker films, whereas for very thin films (10 nm or less) a deviating behaviour probably due to inhomogeneities is observed. For the p a-Si:H / n c-Si junction separation of excess charge carriers in the space charge region is observed leading to a slowly decaying tail of the signal. This separation is also observed in thick i a-Si:H / n c-Si samples where electrons are injected from the a-Si:H film in the c-Si substrate.

The hall mobility of charge carriers at room temperature in InSb thin films regrown from the melt

1979 ◽  
Vol 56 (3) ◽  
pp. 331-336
Author(s):  
M. Oszwałcrossed l.c.ldowski
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Room Temperature ◽  
Charge Carriers ◽  
Mobility Of Charge Carriers ◽  
Insb Thin Films

Preparation and Investigation on Magneto-Electric Effect of Cr2O3 Thin Films

2006 ◽  
Vol 11-12 ◽  
pp. 133-136 ◽  
Author(s):  
Takeshi Yokota ◽  
Takaaki Kuribayashi ◽  
Manabu Gomi ◽  
Takeshi Shundo ◽  
Yasutoshi Sakakibara
Keyword(s):  
Thin Films ◽  
Magnetic Moment ◽  
Random Distribution ◽  
Electric Properties ◽  
Si Substrate ◽  
Al2o3 Substrate ◽  
Oriented Sample ◽  
External Voltage ◽  
Crystalline Sample ◽  
Electric Effect

We investigated the magneto-electric properties and electric properties of Cr2O3 thin films. Cr2O3 thin films were prepared on a thermal-oxidized Si substrate and a c-Al2O3 substrate. The sample prepared on the thermal-oxidized Si substrate had poly-crystalline structure. On the other hand, the sample prepared on the c-Al2O3 substrate has preferentially (006) oriented structure. Both samples had high enough resistivity to get a high induced magnetic moment. The induced magnetic moment by applying external voltage was observed on the oriented sample, although there was no induced magnetic moment on the same voltage for the poly-crystalline sample. This difference may be due to the random distribution of crystal and the leakage current caused by the Pool-Frenkel type defect in the poly-crystalline film.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

A Comprehensive Insight Towards Pharmaceutical Aspects of Graphene Nanosheets

2020 ◽  
Vol 21 (11) ◽  
pp. 1016-1027 ◽  
Author(s):  
Fatemeh Emadi ◽  
Arash Emadi ◽  
Ahmad Gholami
Keyword(s):  
Targeted Delivery ◽  
Graphene Nanosheets ◽  
High Surface ◽  
High Surface Area ◽  
Charge Carriers ◽  
Pharmaceutical Sciences ◽  
Pharmacokinetics And Pharmacodynamics ◽  
Mobility Of Charge Carriers ◽  
Graphene Derivatives ◽  
Pharmacokinetic Properties

Graphene Derivatives (GDs) have captured the interest and imagination of pharmaceutical scientists. This review exclusively provides pharmacokinetics and pharmacodynamics information with a particular focus on biopharmaceuticals. GDs can be used as multipurpose pharmaceutical delivery systems due to their ultra-high surface area, flexibility, and fast mobility of charge carriers. Improved effects, targeted delivery to tissues, controlled release profiles, visualization of biodistribution and clearance, and overcoming drug resistance are examples of the benefits of GDs. This review focuses on the application of GDs for the delivery of biopharmaceuticals. Also, the pharmacokinetic properties and the advantage of using GDs in pharmaceutics will be reviewed to achieve a comprehensive understanding about the GDs in pharmaceutical sciences.

Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Heating Rate ◽  
Tetragonal Phase ◽  
Monoclinic Phase ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Interfacial Diffusion ◽  
Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

scholarly journals Measurement of Electrical Properties of Superconducting YBCO Thin Films in the VHF Range

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3360
Author(s):  
Yakir Dahan ◽  
Eldad Holdengreber ◽  
Elichai Glassner ◽  
Oz Sorkin ◽  
Shmuel E. Schacham ◽  
...  
Keyword(s):  
Thin Films ◽  
Theoretical Model ◽  
Quality Factor ◽  
High Frequency ◽  
Unit Length ◽  
Superconducting Thin Films ◽  
Electrical Parameters ◽  
Very High Frequency ◽  
Production Constraints ◽  
Very High

A new measurement technique of electrical parameters of superconducting thin films at the Very High Frequency (VHF) range is described, based on resonators with microstrip (MS) structures. The design of an optimal resonator was achieved, based on a thorough theoretical analysis, which is required for derivation of the exact configuration of the MS. A theoretical model is presented, from which an expression for the attenuation of a MS line can be derived. Accordingly, simulations were performed, and an optimal resonator for the VHF range was designed and implemented. Production constraints of YBa2Cu3O7 (YBCO) limited the diameter of the sapphire substrate to 3″. Therefore, a meander configuration was formed to fit the long λ/4 MS line on the wafer. By measuring the complex input reflection coefficients of a λ/4 resonator, we extracted the quality factor, which is mainly affected by the dielectric and conductor attenuations. The experimental results are well fitted by the theoretical model. The dielectric attenuation was calculated using the quasi-static analysis of the MS line. An identical copper resonator was produced and measured to compare the properties of the YBCO resonator in reference to the copper one. A quality factor of ~6·105 was calculated for the YBCO resonator, three orders of magnitude larger than that of the copper resonator. The attenuation per unit length of the YBCO layer was smaller by more than five orders of magnitude than that of the copper.

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