Defect‐Engineered n‐Doping of WSe 2 via Argon Plasma Treatment and Its Application in Field‐Effect Transistors

2021 ◽  
pp. 2100718
Author(s):  
Junghun Kim ◽  
Hyunik Park ◽  
SangHyuk Yoo ◽  
Yeon‐Ho Im ◽  
Keonwook Kang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Argon Plasma ◽  
N Doping

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation

2017 ◽  
Vol 69 ◽  
pp. 254-258 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Nadia Anwar ◽  
Salma Siddique ◽  
Muhammad Waqas Iqbal ◽  
Tassadaq Hussain
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Beam Irradiation ◽  
Pn Junction ◽  
N Doping

Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime

Nanoscale ◽  
2019 ◽  
Vol 11 (21) ◽  
pp. 10420-10428 ◽  
Author(s):  
Ying Xia ◽  
Guoli Li ◽  
Bei Jiang ◽  
Zhenyu Yang ◽  
Xingqiang Liu ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Saturation Regime ◽  
Kink Effect ◽  
Current Characteristics

We study the ‘up-kick’ current characteristics observed in black phosphorus (BP) field-effect transistors while the BP thickness increased above 10 nm, and effectively suppress the kink effect via the N2 plasma treatment.

scholarly journals Field‐Effect Transistors: A Facile and Effective Method for Patching Sulfur Vacancies of WS 2 via Nitrogen Plasma Treatment (Small 36/2019)

Small ◽  
2019 ◽  
Vol 15 (36) ◽  
pp. 1970195
Author(s):  
Jianfeng Jiang ◽  
Qinghua Zhang ◽  
Aizhu Wang ◽  
Yu Zhang ◽  
Fanqi Meng ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Nitrogen Plasma

scholarly journals Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping

2019 ◽  
Vol 9 (6) ◽  
pp. 1110 ◽  
Author(s):  
Xiao-Mei Zhang ◽  
Sian-Hong Tseng ◽  
Ming-Yen Lu
Keyword(s):  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Spectroscopic Characterization ◽  
Optoelectronic Device ◽  
Large Area ◽  
Device Applications ◽  
P Type ◽  
Ultraviolet Photodetectors

Two-dimensional (2D) MoS2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS2 photodetectors with ultrafast response and high responsivity, up-scalable techniques for realizing controlled p-type doping in MoS2 is necessary. In this paper, we demonstrate a p-type multilayer MoS2 photodetector with selective-area doping using CHF3 plasma treatment. Microscopic and spectroscopic characterization techniques, including atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), are used to investigate the morphological and electrical modification of the p-type doped MoS2 surface after CHF3 plasma treatment. Back-gated p-type MoS2 field-effect transistors (FETs) are fabricated with an on/off current ratio in the order of 103 and a field-effect mobility of 65.2 cm2V−1s−1. They exhibit gate-modulated ultraviolet photodetection with a rapid response time of 37 ms. This study provides a promising approach for the development of mild plasma-doped MoS2 as a 2D material in post-silicon electronic and optoelectronic device applications.

Systematic Study of Widely Applicable N-Doping Strategy for High-Performance Solution-Processed Field-Effect Transistors

2016 ◽  
Vol 26 (43) ◽  
pp. 7886-7894 ◽  
Author(s):  
Jihong Kim ◽  
Dongyoon Khim ◽  
Kang-Jun Baeg ◽  
Won-Tae Park ◽  
Seung-Hoon Lee ◽  
...  
Keyword(s):  
Systematic Study ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
N Doping
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