A New Approach to the Removal of Sub-Micron Particles from Solid (Silicon) Substrates

1988 ◽  
pp. 361-372 ◽  
Author(s):  
A. F. M. Leenaars
Keyword(s):  
Silicon Substrates ◽  
New Approach

scholarly journals Анализ углеродсодержащих материалов методом вторично-ионной масс-спектрометрии: содержание атомов углерода в sp-=SUP=-2-=/SUP=-- и sp-=SUP=-3-=/SUP=--гибридных состояниях

2020 ◽  
Vol 46 (6) ◽  
pp. 38
Author(s):  
М.Н. Дроздов ◽  
Ю.Н. Дроздов ◽  
А.И. Охапкин ◽  
П.А. Юнин ◽  
О.А. Стрелецкий ◽  
...  
Keyword(s):  
Main Parameter ◽  
Mass Spectra ◽  
Secondary Ion Mass Spectrometry ◽  
Silicon Substrates ◽  
Inhomogeneous Distribution ◽  
New Approach ◽  
Growth Modes ◽  
Secondary Ions ◽  
Calibration Dependence ◽  
Secondary Ion

A new approach to the analysis of carbon-containing materials by the method of secondary ion mass spectrometry is studied, which allows one to determine the concentration of carbon atoms in the states of sp2 and sp3 hybridization. It is proposed to use the ratio of the intensities of cluster secondary ions C8/C7 as the main parameter of the mass spectra of secondary ions characterizing the concentration of N(sp3). From measurements of several test structures, a calibration dependence of N (sp3) on the C8/C7 ratio was obtained. The N(sp3) profiles of diamond-like carbon samples grown on diamond and silicon substrates were measured, showing an N(sp3) concentration of 0.3 to 0.6 for different growth modes and an inhomogeneous distribution of the N(sp3) concentration over the thickness of the samples.

Nanofabrication Using Self-Assembled Alumina Templates

2000 ◽  
Vol 636 ◽  
Author(s):  
Oded Rabin ◽  
Paul R. Herz ◽  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Akintunde I. Akinwande ◽  
...  
Keyword(s):  
Porous Alumina ◽  
Optical Devices ◽  
Silicon Substrates ◽  
Porous Films ◽  
New Approach ◽  
Alumina Films ◽  
Planar Structures ◽  
Pressure Injection ◽  
Straightforward Method

AbstractA new approach for the use of porous alumina films as a template for nanofabrication is presented. In this process the porous films are prepared on silicon substrates, simplifying both the template fabrication and subsequent processing, and improving the quality of the films and their surfaces. Structural analysis of the film was carried out. Bismuth and bismuth telluride nanowires were prepared by pressure injection and electrochemical deposition, respectively, in alumina films 5-10 μ thick with parallel ordered pores 40 nm in diameter. The films were also patterned by lithography, offering new opportunities for area-selective anodization of non-planar structures. The new approach offers a straightforward method for the fabrication of arrays of nanostructures and their incorporation into electronic and optical devices.

Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon

2012 ◽  
Vol 717-720 ◽  
pp. 177-180 ◽  
Author(s):  
Philip Hens ◽  
Julian Müller ◽  
Günter Wagner ◽  
Rickard Liljedahl ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Substrate Material ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
New Approach ◽  
Cvd Growth ◽  
Cost Efficient ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth ◽  
Defect Densities

In this work a new approach for the production of freestanding cubic silicon carbide (3C SiC) in (001) orientation is presented which is based on the combination of chemical vapor deposition (CVD) and the fast sublimation growth process (FSGP). Fast homoepitaxial growth of 3C SiC using sublimation epitaxy on a template created by CVD growth on silicon substrates allows to obtain thick freestanding material with low defect densities. Using standard silicon wafers as substrate material permits a cost efficient process and the applying of wafers with different orientations. The (001) orientation used in this work will potentially allow further heteroepitaxial growth of other cubic semiconductors, like e.g. gallium nitride (GaN).

The O–C diagrams of minor planets − a new approach to modelling the rotation

1999 ◽  
Vol 173 ◽  
pp. 185-188
Author(s):  
Gy. Szabó ◽  
K. Sárneczky ◽  
L.L. Kiss
Keyword(s):  
Error Analysis ◽  
Time Dependence ◽  
Theoretical Work ◽  
Minor Planet ◽  
Minor Planets ◽  
New Approach ◽  
Preliminary Results ◽  
Ccd Observations

AbstractA widely used tool in studying quasi-monoperiodic processes is the O–C diagram. This paper deals with the application of this diagram in minor planet studies. The main difference between our approach and the classical O–C diagram is that we transform the epoch (=time) dependence into the geocentric longitude domain. We outline a rotation modelling using this modified O–C and illustrate the abilities with detailed error analysis. The primary assumption, that the monotonity and the shape of this diagram is (almost) independent of the geometry of the asteroids is discussed and tested. The monotonity enables an unambiguous distinction between the prograde and retrograde rotation, thus the four-fold (or in some cases the two-fold) ambiguities can be avoided. This turned out to be the main advantage of the O–C examination. As an extension to the theoretical work, we present some preliminary results on 1727 Mette based on new CCD observations.

A New Approach to the Demonstration of Oxidase-Localization Using Tannic Acid Or Catechin

1973 ◽  
Vol 31 ◽  
pp. 698-699
Author(s):  
V. Mizuhira ◽  
Y. Futaesaku
Keyword(s):  
Cross Section ◽  
Tannic Acid ◽  
Elastic Fiber ◽  
The Other ◽  
New Approach ◽  
Tissue Block ◽  
Active Reaction ◽  
The Cross

Previously we reported that tannic acid is a very effective fixative for proteins including polypeptides. Especially, in the cross section of microtubules, thirteen submits in A-tubule and eleven in B-tubule could be observed very clearly. An elastic fiber could be demonstrated very clearly, as an electron opaque, homogeneous fiber. However, tannic acid did not penetrate into the deep portion of the tissue-block. So we tried Catechin. This shows almost the same chemical natures as that of proteins, as tannic acid. Moreover, we thought that catechin should have two active-reaction sites, one is phenol,and the other is catechole. Catechole site should react with osmium, to make Os- black. Phenol-site should react with peroxidase existing perhydroxide.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

Processing Immunoperoxidase Labeled Cell Monolayers and Cryostat Sesctions For Electron Microscopy

1985 ◽  
Vol 43 ◽  
pp. 714-715
Author(s):  
K. Chien ◽  
R. Van de Velde ◽  
I.P. Shintaku ◽  
A.F. Sassoon
Keyword(s):  
Cell Monolayer ◽  
Cell Types ◽  
Surface Antigens ◽  
Immunoperoxidase Method ◽  
Reaction Step ◽  
Hot Plate ◽  
Air Drying ◽  
New Approach ◽  
Cell Monolayers ◽  
Glass Slides

Immunoelectron microscopy of neoplastic lymphoma cells is valuable for precise localization of surface antigens and identification of cell types. We have developed a new approach in which the immunohistochemical staining can be evaluated prior to embedding for EM and desired area subsequently selected for ultrathin sectioning.A freshly prepared lymphoma cell suspension is spun onto polylysine hydrobromide- coated glass slides by cytocentrifugation and immediately fixed without air drying in polylysine paraformaldehyde (PLP) fixative. After rinsing in PBS, slides are stained by a 3-step immunoperoxidase method. Cell monolayer is then fixed in buffered 3% glutaraldehyde prior to DAB reaction. After the DAB reaction step, wet monolayers can be examined under LM for presence of brown reaction product and selected monolayers then processed by routine methods for EM and embedded with the Chien Re-embedding Mold. After the polymerization, the epoxy blocks are easily separated from the glass slides by heatingon a 100°C hot plate for 20 seconds.

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