Enhanced Layer Growth of GaAs: Sn

1997 ◽  
pp. 319-327
Author(s):  
S. M. Seutter ◽  
A. M. Dabiran ◽  
P. I. Cohen
Keyword(s):  
Layer Growth

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

MODELING THE NORMAL SPECTRAL EMISSIVITY OF BRASS H62 AT 800–1100 K DURING OXIDE LAYER GROWTH

2018 ◽  
Vol 49 (15) ◽  
pp. 1445-1458
Author(s):  
Deheng Shi ◽  
Fenghui Zou ◽  
Zunlue Zhu ◽  
Jinfeng Sun
Keyword(s):  
Oxide Layer ◽  
Spectral Emissivity ◽  
Layer Growth ◽  
Normal Spectral Emissivity

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

scholarly journals Ice Growth Suppression in the Solution Flows of Antifreeze Protein and Sodium Chloride in a Mini-Channel

Processes ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 306
Author(s):  
Kazuya Taira ◽  
Tomonori Waku ◽  
Yoshimichi Hagiwara
Keyword(s):  
Sodium Chloride ◽  
Synergistic Effects ◽  
Pure Water ◽  
Interface Velocity ◽  
Antifreeze Protein ◽  
Layer Growth ◽  
Mixed Solution ◽  
Solution Flow ◽  
Ice Growth ◽  
Cold Energy

The control of ice growth inside channels of aqueous solution flows is important in numerous fields, including (a) cold-energy transportation plants and (b) the preservation of supercooled human organs for transplantation. A promising method for this control is to add a substance that influences ice growth in the flows. However, limited results have been reported on the effects of such additives. Using a microscope, we measured the growth of ice from one sidewall toward the opposite sidewall of a mini-channel, where aqueous solutions of sodium chloride and antifreeze protein flowed. Our aim was to considerably suppress ice growth by mixing the two solutes. Inclined interfaces, the overlapping of serrated interfaces, and interfaces with sharp and flat tips were observed in the cases of the protein-solution, salt-solution, and mixed-solution flows, respectively. In addition, it was found that the average interface velocity in the case of the mixed-solution flow was the lowest and decreased by 64% compared with that of pure water. This significant suppression of the ice-layer growth can be attributed to the synergistic effects of the ions and antifreeze protein on the diffusion of protein.

scholarly journals The Atmosphere’s Effect on Stainless Steel Slabs’ Oxide Formation in a CH4-Fuelled Reheating Furnace

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 621
Author(s):  
Aleksi Laukka ◽  
Eetu-Pekka Heikkinen ◽  
Timo Fabritius
Keyword(s):  
Stainless Steel ◽  
Oxide Layer ◽  
Depth Profiling ◽  
Layer Growth ◽  
304 Stainless Steel ◽  
Oxide Growth ◽  
Breakaway Oxidation ◽  
Positive Effects ◽  
Steel Slab ◽  
Single Temperature

Utilising the oxyfuel practice for CH4-fuelled combustion has positive effects on the emissions, efficiency and cost of high temperature furnace practices. However, especially in older installations, oxyfuel usage requires retrofitting and alters the atmosphere in which the oxidation of the steel occurs, when compared to using air as the oxidiser. Stainless steel slab oxide growth during reheating was studied in different atmospheres. The simulated post-burn atmospheres from oxyfuel, lean oxyfuel and air-fuel practices were used to compare oxide-scale layer growth and morphology during simulated typical AISI 304 stainless steel slab reheating prior to hot rolling. Thermogravimetric measurements, glow discharge optical emission spectrometer (GDOES) and field-emission scanning electron microscope energy dispersive X-ray (FESEM-EDS) methodology were applied to discern differences between oxide growth and inner oxide layer morphology between the three practices. Switching from air to oxyfuel practice at a single temperature had the same increasing effect on the scale formation amount as a 25 °C temperature increase in air atmosphere. Inner oxide layer depth profiling revealed C, Si and Ni to be the main elements that differed between temperatures and atmospheres. A morphology study showed Si and Ni behaviour to be linked to breakaway oxidation.

scholarly journals Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Layer Growth ◽  
Coarse Grained ◽  
Structural Defects ◽  
Effect Of Temperature ◽  
Layer By Layer ◽  
Reactant Concentration ◽  
Metal Organic

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.

scholarly journals MOCVD Grown HgCdTe Heterostructures for Medium Wave Infrared Detectors

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 611
Author(s):  
Waldemar Gawron ◽  
Jan Sobieski ◽  
Tetiana Manyk ◽  
Małgorzata Kopytko ◽  
Paweł Madejczyk ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Infrared Detectors ◽  
Lattice Mismatch ◽  
Layer Growth ◽  
Ex Situ ◽  
Current Status ◽  
Organic Chemical ◽  
Infrared Band ◽  
Donor And Acceptor ◽  
Wide Range

This paper presents the current status of medium-wave infrared (MWIR) detectors at the Military University of Technology’s Institute of Applied Physics and VIGO System S.A. The metal–organic chemical vapor deposition (MOCVD) technique is a very convenient tool for the deposition of HgCdTe epilayers, with a wide range of compositions, used for uncooled infrared detectors. Good compositional and thickness uniformity was achieved on epilayers grown on 2-in-diameter, low-cost (100) GaAs wafers. Most growth was performed on substrates, which were misoriented from (100) by between 2° and 4° in order to minimize growth defects. The large lattice mismatch between GaAs and HgCdTe required the usage of a CdTe buffer layer. The CdTe (111) B buffer layer growth was enforced by suitable nucleation procedure, based on (100) GaAs substrate annealing in a Te-rich atmosphere prior to the buffer deposition. Secondary-ion mass spectrometry (SIMS) showed that ethyl iodide (EI) and tris(dimethylamino)arsenic (TDMAAs) were stable donor and acceptor dopants, respectively. Fully doped (111) HgCdTe heterostructures were grown in order to investigate the devices’ performance in the 3–5 µm infrared band. The uniqueness of the presented technology manifests in a lack of the necessity of time-consuming and troublesome ex situ annealing.

Direct Layer-by-Layer Growth of Crystalline Ag-TCNQ Thin Films on Functionalized Au Substrate: How Critical Is the pH of Ag(I) Solution?

2020 ◽  
Vol 11 (24) ◽  
pp. 10548-10551
Author(s):  
Aswani Sathish Lathika ◽  
Shammi Rana ◽  
Anupam Prasoon ◽  
Pooja Sindhu ◽  
Debashree Roy ◽  
...  
Keyword(s):  
Thin Films ◽  
Layer Growth ◽  
Layer By Layer
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