Development of Porous Matrices as Scaffolds for Tissue Engineering: Rheological and Microstructural Characterization

2019 ◽  
pp. 148-151
Author(s):  
Victor Perez-Puyana ◽  
Mercedes Jiménez-Rosado ◽  
Manuel Felix ◽  
Alberto Romero ◽  
Antonio Guerrero
Keyword(s):  
Tissue Engineering ◽  
Microstructural Characterization ◽  
Porous Matrices

Collagen as a potential biopolymer for the production of porous matrices (scaffolds) with application in tissue engineering

2019 ◽  
pp. 217-244
Author(s):  
Victor Perez-Puyana ◽  
Manuel Felix ◽  
Alberto Romero ◽  
Antonio Guerrero
Keyword(s):  
Tissue Engineering ◽  
Porous Matrices

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

TEM examination of 2014-SiC metal matrix composite

1988 ◽  
Vol 46 ◽  
pp. 726-727
Author(s):  
M. G. Burke ◽  
M. N. Gungor ◽  
P. K. Liaw
Keyword(s):  
Metal Matrix Composite ◽  
Metal Matrix Composites ◽  
Matrix Composite ◽  
Metal Matrix ◽  
Tensile Deformation ◽  
Microstructural Characterization ◽  
Thin Foil ◽  
Matrix Alloy ◽  
Matrix Composites ◽  
Ion Milling

Aluminum-based metal matrix composites offer unique combinations of high specific strength and high stiffness. The improvement in strength and stiffness is related to the particulate reinforcement and the particular matrix alloy chosen. In this way, the metal matrix composite can be tailored for specific materials applications. The microstructural characterization of metal matrix composites is thus important in the development of these materials. In this study, the structure of a p/m 2014-SiC particulate metal matrix composite has been examined after extrusion and tensile deformation.Thin-foil specimens of the 2014-20 vol.% SiCp metal matrix composite were prepared by dimpling to approximately 35 μm prior to ion-milling using a Gatan Dual Ion Mill equipped with a cold stage. These samples were then examined in a Philips 400T TEM/STEM operated at 120 kV. Two material conditions were evaluated: after extrusion (80:1); and after tensile deformation at 250°C.

Microstructural characterization of laser-melted/roller-quenched dicalcium silicate

1988 ◽  
Vol 46 ◽  
pp. 582-583
Author(s):  
C. J. Chan ◽  
K. R. Venkatachari ◽  
W. M. Kriven ◽  
J. F. Young
Keyword(s):  
Particle Size ◽  
Raw Materials ◽  
Shape Change ◽  
Microstructural Characterization ◽  
Particle Size Effect ◽  
Dicalcium Silicate ◽  
Laser Melting ◽  
Uniform Size ◽  
Cell Shape Change ◽  
Wide Range

Dicalcium silicate (Ca2SiO4) is a major component of Portland cement. It has also been investigated as a potential transformation toughener alternative to zirconia. It has five polymorphs: α, α'H, α'L, β and γ. Of interest is the β-to-γ transformation on cooling at about 490°C. This transformation, accompanied by a 12% volume increase and a 4.6° unit cell shape change, is analogous to the tetragonal-to-monoclinic transformation in zirconia. Due to the processing methods used, previous studies into the particle size effect were limited by a wide range of particle size distribution. In an attempt to obtain a more uniform size, a fast quench rate involving a laser-melting/roller-quenching technique was investigated.The laser-melting/roller-quenching experiment used precompacted bars of stoichiometric γ-Ca2SiO4 powder, which were synthesized from AR grade CaCO3 and SiO2xH2O. The raw materials were mixed by conventional ceramic processing techniques, and sintered at 1450°C. The dusted γ-Ca2SiO4 powder was uniaxially pressed into 0.4 cm x 0.4 cm x 4 cm bars under 34 MPa and cold isostatically pressed under 172 MPa. The γ-Ca2SiO4 bars were melted by a 10 KW-CO2 laser.

Microstructural characterization of a rapidly solidified Al-Fe-V-Si alloy for elevated temperature applications

1988 ◽  
Vol 46 ◽  
pp. 550-551
Author(s):  
R. E. Franck ◽  
J. A. Hawk ◽  
G. J. Shiflet
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Grain Growth ◽  
Volume Fraction ◽  
Microstructural Characterization ◽  
Second Phase ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Temperature Applications

Rapid solidification processing (RSP) is one method of producing high strength aluminum alloys for elevated temperature applications. Allied-Signal, Inc. has produced an Al-12.4 Fe-1.2 V-2.3 Si (composition in wt pct) alloy which possesses good microstructural stability up to 425°C. This alloy contains a high volume fraction (37 v/o) of fine nearly spherical, α-Al12(Fe, V)3Si dispersoids. The improved elevated temperature strength and stability of this alloy is due to the slower dispersoid coarsening rate of the silicide particles. Additionally, the high v/o of second phase particles should inhibit recrystallization and grain growth, and thus reduce any loss in strength due to long term, high temperature annealing.The focus of this research is to investigate microstructural changes induced by long term, high temperature static annealing heat-treatments. Annealing treatments for up to 1000 hours were carried out on this alloy at 500°C, 550°C and 600°C. Particle coarsening and/or recrystallization and grain growth would be accelerated in these temperature regimes.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

A Comparison of Tem and Apfim to the Interpretation of Modulated Microstructures

1985 ◽  
Vol 43 ◽  
pp. 70-71
Author(s):  
M.G. Burke ◽  
M.K. Miller
Keyword(s):  
Low Temperature ◽  
Microstructural Characterization ◽  
Superlattice Reflection ◽  
High Volume ◽  
Atom Probe ◽  
Dark Field ◽  
Miscibility Gap ◽  
Second Phase ◽  
Two Phase ◽  
Probe Field

Interpretation of fine-scale microstructures containing high volume fractions of second phase is complex. In particular, microstructures developed through decomposition within low temperature miscibility gaps may be extremely fine. This paper compares the morphological interpretations of such complex microstructures by the high-resolution techniques of TEM and atom probe field-ion microscopy (APFIM).The Fe-25 at% Be alloy selected for this study was aged within the low temperature miscibility gap to form a <100> aligned two-phase microstructure. This triaxially modulated microstructure is composed of an Fe-rich ferrite phase and a B2-ordered Be-enriched phase. The microstructural characterization through conventional bright-field TEM is inadequate because of the many contributions to image contrast. The ordering reaction which accompanies spinodal decomposition in this alloy permits simplification of the image by the use of the centered dark field technique to image just one phase. A CDF image formed with a B2 superlattice reflection is shown in fig. 1. In this CDF micrograph, the the B2-ordered Be-enriched phase appears as bright regions in the darkly-imaging ferrite. By examining the specimen in a [001] orientation, the <100> nature of the modulations is evident.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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