Sol–gel grown Pd modified WO3 thin film based methanol sensor and the effect of annealing temperatures

2016 ◽  
Vol 23 (9) ◽  
pp. 4195-4201 ◽  
Author(s):  
Anup Dey ◽  
Bijoy Kantha ◽  
Subir Kumar Sarkar
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Methanol Sensor

scholarly journals Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Low Cost ◽  
Thermal Analyses ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide ◽  
Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

Photocatalytic Activities of Ce3+-Doped TiO2 Thin Films Prepared by Sol-Gel Method

2011 ◽  
Vol 239-242 ◽  
pp. 1850-1853
Author(s):  
Shu Kai Zheng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Activity ◽  
Sol Gel ◽  
Atomic Ratio ◽  
Gel Method ◽  
Sol Gel Method ◽  
Annealing Temperatures ◽  
Glass Slides ◽  
Photocatalytic Activities

A series of TiO2 thin films with and without Ce3+ doping were successfully obtained on microscope glass slides by sol-gel method. The photocatalytic activities of the pure TiO2 and Ce3+-doped TiO2 thin films were evaluated by the degradation of rhodamine B solution. The effects of both Ce3+ contents and annealing temperatures on the photocatalytic activities of the samples were examined. The results indicated that the TiO2 thin film with an atomic ratio of Ti:Ce=5:1 annealed at 300°C had a higher photocatalytic activity among the samples.

Electrical and Structural Properties of TiO2 Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method

2013 ◽  
Vol 667 ◽  
pp. 371-374 ◽  
Author(s):  
M. Basri ◽  
Mohd Nor Asiah ◽  
Mohd Khairul bin Ahmad ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Coating Method

Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.

The Influences of Annealing Temperature on the Crystal Phase and Microstructure of the WO3 Thin Film

2012 ◽  
Vol 562-564 ◽  
pp. 7-10 ◽  
Author(s):  
Dan Ni Qu ◽  
Hai Feng Cheng ◽  
Dong Qing Liu
Keyword(s):  
Thin Film ◽  
Monoclinic Phase ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
Crystal Phase ◽  
Annealing Temperatures ◽  
Peroxotungstic Acid ◽  
Sol Gel Process ◽  
The Continuum

The tungsten oxideWO3thin film was prepared by sol-gel process through peroxotungstic acid (PTA). The crystal phase and surface morphological features change at different annealing temperatures. The WO3 thin film is amorphous at 300 °C. When the annealing temperature is increased to 400 °C, it becomes monoclinic phase. The phase begins to become triclinic at 550 °C. The phase then changes to orthorhombic phase at 750 °C. With the increasing of the annealing temperature, the continuum of the WO3 thin film is broke and the gabs among grains become larger. The WO3 thin film is almost disappear after annealed at 850 °C.

Structural, Optical and Electrical Characteristics of Polycrystalline ZnO Thin Film Prepared by Sol-Gel Spin-Coating Method

2013 ◽  
Vol 667 ◽  
pp. 24-29
Author(s):  
Mohamad Hafiz Mamat ◽  
A.A.A. Halim ◽  
Mohd Zainizan Sahdan ◽  
S. Amizam ◽  
Zuraida Khusaimi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Sem Images ◽  
Glass Substrates ◽  
Annealing Temperatures

The effect of annealing temperatures on the Zinc Oxide (ZnO) thin films properties has been investigated. 1.0 M ZnO solution was prepared by sol-gel method as coating solution for ZnO thin films deposition process. The thin films deposition was conducted by spin-coating technique on the silicon and glass substrates. The scanning electron microscopy (SEM) images reveal the evolution of ZnO surface morphology with annealing temperatures. The crystallinity improvement occurred at higher annealing temperature as shown by x-ray diffraction (XRD) result. The optical properties found to be varied at different annealing temperatures. The current-voltage (I-V) measurement results suggested the improvement of ZnO thin film electrical properties with annealing temperatures.

High Transparency Characteristics of Zinc Oxide Thin Films Annealed at Different Temperatures

2013 ◽  
Vol 667 ◽  
pp. 367-370 ◽  
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Sol Gel ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Thin Film ◽  
Annealing Temperatures ◽  
Different Temperatures ◽  
Solution Preparation ◽  
Set Up

Zinc Oxide thin film has been prepared by sol-gel spin-coating techniques and has three steps preparation were includes. They were solution preparation, thin film deposition and characterization process. The film were prepared to investigate the annealing temperatures depend with two environments were hot and room temperatures. Annealing temperatures were set up into five temperatures 200°C, 300°C, 400°C, 500°C, and 600°C were heated inside furnace. The characterization of ZnO thin film was measured by UV-Vis Spectrometry which to measure the transmittance of ZnO have when through the medium. The transmittance was investigated by use glass as a substrate. The optical properties showed when increased annealing temperatures, so the high UV was transmit. From that, the absorption coefficient of ZnO also can also investigate too. The surface morphology in increasing annealing temperature has a small size and less porosity between particles.

Effect of Annealing Temperatures and Pre-Heating on the Characteristics of a Nanocrystalline Zno Thin Film Prepared by the Sol-Gel Dip-Coating Method

2008 ◽  
Vol 63 (7-8) ◽  
pp. 440-444 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Annealing Temperatures ◽  
Coating Method ◽  
Dip Coating Method

For effectively fabricating nanocrystalline ZnO thin films by the sol-gel method, the relationships between the temperature of the heat treatment and the quality of the ZnO thin films was observed. The decomposition of the sol was analyzed by TG-DTA. The orientation of the c-axis of the ZnO thin film was identified by XRD. The morphology was observed and estimated by SEM. The experimental results did show that the orientation of the c-axis is determined by the pre-heating and annealing temperatures, and that the grain size and roughness of the ZnO thin films are mainly influenced by the annealing temperature. A qualified ZnO thin film was prepared by using a sol-gel with a preheating temperature of 275 °C for 10 min and an annealing temperature of 550 °C for 60 min.

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