scholarly journals Recent Advances in Immobilization Strategies for Biomolecules in Sensors Using Organic Field-Effect Transistors

2020 ◽  
Vol 26 (6) ◽  
pp. 424-440
Author(s):  
Le Li ◽  
Siying Wang ◽  
Yin Xiao ◽  
Yong Wang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Physical Adsorption ◽  
Low Cost ◽  
Covalent Binding ◽  
High Sensitivity ◽  
Detection Sensitivity ◽  
Biological Macromolecules ◽  
Organic Field Effect Transistors ◽  
Efficient Detection

Abstract Organic field-effect transistors (OFETs) are fabricated using organic semiconductors (OSCs) as the active layer in the form of thin films. Due to its advantages of high sensitivity, low cost, compact integration, flexibility, and printability, OFETs have been used extensively in the sensing area. For analysis platforms, the construction of sensing layers is a key element for their efficient detection capability. The strategy used to immobilize biomolecules in these devices is especially important for ensuring that the sensing functions of the OFET are effective. Generally, analysis platforms are developed by modifying the gate/electrolyte or OSC/electrolyte interface using biomolecules, such as enzymes, antibodies, or deoxyribonucleic acid (DNA) to ensure high selectivity. To provide better or more convenient biological immobilization methods for researchers in this field and thereby improve detection sensitivity, this review summarizes recent developments in the immobilization strategies used for biological macromolecules in OFETs, including cross-linking, physical adsorption, embedding, and chemical covalent binding. The influences of biomolecules on device performance are also discussed.

Organic Materials for Multifunctional Transistor-Based Devices

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Microprocessor Technology ◽  
Silicon Based ◽  
Electronic Ink ◽  
Made In ◽  
Charge Channel

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

scholarly journals A Rapid, Low‐Cost, and Scalable Technique for Printing State‐of‐the‐Art Organic Field‐Effect Transistors

2016 ◽  
Vol 1 (5) ◽  
pp. 1600090 ◽  
Author(s):  
Inés Temiño ◽  
Freddy G. Del Pozo ◽  
M. R. Ajayakumar ◽  
Sergi Galindo ◽  
Joaquim Puigdollers ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Low Cost ◽  
Organic Field Effect Transistors

scholarly journals Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sooraj Sanjay ◽  
Mainul Hossain ◽  
Ankit Rao ◽  
Navakanta Bhat
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Point Of Care ◽  
Low Cost ◽  
Ph Sensor ◽  
Detection Sensitivity ◽  
Label Free ◽  
Back Gate ◽  
Dielectric Thickness ◽  
Label Free Detection

AbstractIon-sensitive field-effect transistors (ISFETs) have gained a lot of attention in recent times as compact, low-cost biosensors with fast response time and label-free detection. Dual gate ISFETs have been shown to enhance detection sensitivity beyond the Nernst limit of 59 mV pH−1 when the back gate dielectric is much thicker than the top dielectric. However, the thicker back-dielectric limits its application for ultrascaled point-of-care devices. In this work, we introduce and demonstrate a pH sensor, with WSe2(top)/MoS2(bottom) heterostructure based double gated ISFET. The proposed device is capable of surpassing the Nernst detection limit and uses thin high-k hafnium oxide as the gate oxide. The 2D atomic layered structure, combined with nanometer-thick top and bottom oxides, offers excellent scalability and linear response with a maximum sensitivity of 362 mV pH−1. We have also used technology computer-aided (TCAD) simulations to elucidate the underlying physics, namely back gate electric field screening through channel and interface charges due to the heterointerface. The proposed mechanism is independent of the dielectric thickness that makes miniaturization of these devices easier. We also demonstrate super-Nernstian behavior with the flipped MoS2(top)/WSe2(bottom) heterostructure ISFET. The results open up a new pathway of 2D heterostructure engineering as an excellent option for enhancing ISFET sensitivity beyond the Nernst limit, for the next-generation of label-free biosensors for single-molecular detection and point-of-care diagnostics.

scholarly journals Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

2015 ◽  
Vol 17 (9) ◽  
pp. 6635-6643 ◽  
Author(s):  
Yong Jin Jeong ◽  
Dong-Jin Yun ◽  
Jaeyoung Jang ◽  
Seonuk Park ◽  
Tae Kyu An ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Organic Electronic ◽  
Solution Processed ◽  
Flexible Devices ◽  
Significant Interest ◽  
Grown Graphene

Solution-processed organic field effect transistors (OFETs) have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices.

High-Performance Low-Cost Organic Field-Effect Transistors with Chemically Modified Bottom Electrodes

2006 ◽  
Vol 128 (51) ◽  
pp. 16418-16419 ◽  
Author(s):  
Chong-an Di ◽  
Gui Yu ◽  
Yunqi Liu ◽  
Xinjun Xu ◽  
Dacheng Wei ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Chemically Modified

Stable Organic Field Effect Transistors with Low-Cost MoO 3 /Al Source-Drain Electrodes

2013 ◽  
Vol 30 (2) ◽  
pp. 028501
Author(s):  
Hui Zhang ◽  
Bao-Xiu Mi ◽  
Xin Li ◽  
Zhi-Qiang Gao ◽  
Lu Zhao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors

scholarly journals Amine Detection Using Organic Field Effect Transistor Gas Sensors

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 13
Author(s):  
Panagiotis Mougkogiannis ◽  
Michael Turner ◽  
Krishna Persaud
Keyword(s):  
Low Power ◽  
Gas Sensors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Limit Of Detection ◽  
High Sensitivity ◽  
Organic Field Effect Transistors ◽  
Practical Applications ◽  
Empirical Prediction ◽  
Sensitivity And Selectivity

Low power gas sensors with high sensitivity and selectivity are desired for many practical applications. Devices based on organic field effect transistors are promising because they can be fabricated at modest cost and are low power devices. Organic field effect transistors fabricated in bottom-gate bottom-contact configuration using the organic semiconductor [2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno] [3,2-b]thiophene) (DPP-T-TT) were systematically investigated to determine the response characteristics to a series of alkylamines and ammonia. The highest sensitivity was to dibutylamine with a limit of detection of 0.025 ppb, followed by n-butylamine, 0.056 ppb, and ammonia, 2.17 ppb. A model was constructed based on the Antoine equation that successfully allows the empirical prediction of the sensitivity and selectivity of the gas sensor to various analytes including amines and alcohols based on the Antoine C parameter and the heat of the vaporization of the analyte.

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