Out-of-plane relative control of an ion beam shepherd satellite using yaw attitude deviations

AbstractCo/Pt thin film multilayers with strong perpendicular anisotropy and out-of-plane coercivities of 5-11 kOe were magnetically altered in areas of local ion beam interaction. The ion irradiations were performed by ion projection through silicon stencil masks fabricated by silicon on insulator (SOI) membrane technology. The ion projector at the Fraunhofer Institute for Silicon Technology (ISiT) was operated at 73 keV ion energy and with a 8.7- fold demagnification. After exposure to 3 × 1014Ar+/ cm2 magnetic islands smaller than 100 nm in diameter were resolved in the Co/Pt multilayersby means of magnetic force microscopy. The impact of different ion species (He+, Ar+ and Xe+) and ion energies (10 – 200 keV) on the multilayer structure was evaluated using Monte Carlo simulations. The ballistic interface intermixing was used to predict magnetic coercivity changes for various irradiation conditions. The simulations revealed that with 73 keV Ar+ and Xe+ ions the irradiation dose could be reduced by a factor of 100 and 400 respectively in comparison to 73 keV He+which was verified in the experiments. X-ray reflectivity measurements confirmed that the Co/Pt superlattice structure is slightly weakened during the irradiation and that the surface smoothness of the media is preserved. Using the Ion Projection Process Development Tool (PDT) at IMS-Vienna concentric data tracks including head positioning servo informations were patterned onto a 1” IBM microdrive™ glass disk which was coated with Co/Pt multilayers. In a single exposure step several tracks within an exposure field of 17 mm in diameter were structured by 2 × 1015He+/ cm2 at 45 keV using a 4- fold demagnification set-up.

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Ion-Beam Assist Nano-Texturing of Films

MRS Proceedings ◽

10.1557/proc-1020-gg02-04 ◽

2007 ◽

Vol 1020 ◽

Author(s):

Vladimir Matias ◽

Chris Sheehan ◽

Alp T. Findikoglu

Keyword(s):

Experimental Design ◽

Single Crystal ◽

Ion Beam ◽

Fabrication Method ◽

Polycrystalline Metal ◽

Tape Transport ◽

Homoepitaxial Growth ◽

Ion Beam Assisted Deposition ◽

High Throughput Experimentation ◽

Out Of Plane

AbstractWe present an ion-beam based fabrication method for growth of single-crystal-like films that does not utilize epitaxy on single crystal substrates. We use ion-beam assisted texturing to obtain biaxial crystalline alignment in a film. This ion-beam assisted deposition (IBAD) texturing can be done on arbitrary, but smooth substrates, including flexible polycrystalline metal tapes. With IBAD texturing of MgO and subsequent homoepitaxial growth we have demonstrated an in-plane mosaic spread FWHM as low as 2° and out-of-plane alignment of 1°. The deposition system we use includes reel-to-reel tape transport for a linear transport of substrate materials through the deposition zones. This allows for high-throughput experimentation via a linear combinatorial experimental design.

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Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2nanoparticles

Journal of Applied Crystallography ◽

10.1107/s0021889813026046 ◽

2013 ◽

Vol 46 (6) ◽

pp. 1796-1804 ◽

Cited By ~ 6

Author(s):

Rossano Lang ◽

Alan S. de Menezes ◽

Adenilson O. dos Santos ◽

Shay Reboh ◽

Eliermes A. Meneses ◽

...

Keyword(s):

Strain Distribution ◽

Beam Energy ◽

Lattice Strain ◽

Ion Beam ◽

Silicon Layer ◽

Semiconductor Substrate ◽

X Ray ◽

Out Of Plane ◽

Diffraction Peaks ◽

Surface Diffraction

Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using ω:φ mappings of the ({\overline 1}11) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ion-beam-induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations and morphologies (sphere- and plate-like nanoparticles) within the implanted/recrystallized region. The results show that the shape of the synthesized material singularly affects the surrounding Si lattice. The lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers.

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Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates

MRS Proceedings ◽

10.1557/proc-1150-rr03-05 ◽

2008 ◽

Vol 1150 ◽

Author(s):

Alp Findikoglu ◽

Terry G. Holesinger ◽

Alyson Niemeyer ◽

Vladimir Matias ◽

Ozan Ugurlu

Keyword(s):

Grain Boundaries ◽

Doping Concentration ◽

Ion Beam ◽

Buffer Layers ◽

Epitaxial Silicon ◽

Single Crystalline ◽

Out Of Plane ◽

Flexible Metal ◽

Si Films ◽

Metal Tape

AbstractWe summarize recent progress in growth and characterization of aligned-crystalline silicon (ACSi) films on polycrystalline metal and amorphous glass substrates. The ACSi deposition process uses, as a key technique, ion-beam-assisted deposition (IBAD) texturing on a non-single-crystalline substrate to achieve a biaxially-oriented (i.e., with preferred out-of-plane and in-plane crystallographic orientations) IBAD seed layer, upon which homo- and hetero-epitaxial buffer layers and hetero-epitaxial silicon (i.e., ACSi) films with good electronic properties can be grown. We have demonstrated the versatility of our approach by preparing ACSi films on customized architectures, including fully insulating and transparent IBAD layer and buffer layers based on oxides on glass and flexible metal tape, and conducting and reflective IBAD layer and buffer layers based on nitrides on flexible metal tape. Optimized 0.4-μm-thick ACSi films demonstrate out-of-plane and in-plane mosaic spreads of 0.8° and 1.3°, respectively, and a room-temperature Hall mobility of ∼90 cm2/V.s (∼50% of what is achievable with epitaxial single-crystalline Si films, and ∼1000 times that of amorphous Si films) for a p-type doping concentration of ∼4×1016 cm−3. By using various experimental techniques, we have confirmed the underlying crystalline order and the superior electrical characteristics of low-angle (<5°) grain boundaries in ACSi films. Forming gas anneal experiments indicate that Si films with low-angle grain boundaries do not need to be passivated to demonstrate improved majority carrier transport properties. Measurements on metal-insulator-semiconductor structures using ACSi films yield near-electronic-grade surface properties and low surface defect densities in the ACSi films. A prototype n+/p/p+–type diode fabricated using a 4.2-μm-thick ACSi film shows minority carrier lifetime of ∼3 μs, an estimated diffusion length of ∼30 μm in the p-Si layer with a doping concentration of 5×1016 cm−3, and external quantum efficiency of ∼80% at 450 nm with the addition of an MgO film anti-reflector.

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Self-Organized Conductive Gratings of Au Nanostripe Dimers Enable Tunable Plasmonic Activity

Applied Sciences ◽

10.3390/app10041301 ◽

2020 ◽

Vol 10 (4) ◽

pp. 1301

Author(s):

Maria Caterina Giordano ◽

Matteo Barelli ◽

Giuseppe Della Valle ◽

Francesco Buatier de Mongeot

Keyword(s):

High Efficiency ◽

Ion Beam ◽

Near Field ◽

Cost Effective ◽

Localized Surface Plasmon ◽

Large Area ◽

Field Amplification ◽

Self Organized ◽

Broadband Spectrum ◽

Out Of Plane

Plasmonic metasurfaces based on quasi-one-dimensional (1D) nanostripe arrays are homogeneously prepared over large-area substrates (cm2), exploiting a novel self-organized nanofabrication method. Glass templates are nanopatterned by ion beam-induced anisotropic nanoscale wrinkling, enabling the maskless confinement of quasi-1D arrays of out-of-plane tilted gold nanostripes, behaving as transparent wire-grid polarizer nanoelectrodes. These templates enable the dichroic excitation of localized surface plasmon resonances, easily tunable over a broadband spectrum from the visible to the near- and mid-infrared, by tailoring the nanostripes’ shape and/or changing the illumination conditions. The controlled self-organized method allows the engineering of the nanoantennas’ morphology in the form of Au-SiO2-Au nanostripe dimers, which show hybridized plasmonic resonances with enhanced tunability. Under this condition, superior near-field amplification is achievable for the excitation of the hybridized magnetic dipole mode, as pointed out by numerical simulations. The high efficiency of these plasmonic nanoantennas, combined with the controlled tuning of the resonant response, opens a variety of applications for these cost-effective templates, ranging from biosensing and optical spectroscopies to high-resolution molecular imaging and nonlinear optics.

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OS1602 Evaluation of Mechanical Properties of TiN Films Deposited on Out-of-plane Rotating Body by Ion Beam Assisted Deposition

The Proceedings of the Materials and Mechanics Conference ◽

10.1299/jsmemm.2011._os1602-1_ ◽

2011 ◽

Vol 2011 (0) ◽

pp. _OS1602-1_-_OS1602-2_

Author(s):

Masanori NAKATANI ◽

Takuya OHSAWA ◽

Satoshi HANAKI ◽

Hitoshi UCHIDA

Keyword(s):

Mechanical Properties ◽

Ion Beam ◽

Tin Films ◽

Rotating Body ◽

Ion Beam Assisted Deposition ◽

Out Of Plane

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Preparation of Substrates for IBAD-MgO Coated Conductors

MRS Proceedings ◽

10.1557/proc-1001-m04-02 ◽

2007 ◽

Vol 1001 ◽

Cited By ~ 5

Author(s):

Vladimir Matias ◽

Jens Hänisch ◽

E. John Rowley ◽

Chris Sheehan ◽

Paul G. Clem ◽

...

Keyword(s):

Surface Roughness ◽

Ion Beam ◽

Mechanical Polishing ◽

Metal Alloy ◽

Coated Conductors ◽

Important Influence ◽

Substrate Preparation ◽

Solution Deposition ◽

Out Of Plane

AbstractWe examine the influence of various substrate preparation procedures for ion-beam assist deposition (IBAD) texturing of MgO. IBAD-MgO nano-texturing is very sensitive to the nucleation surface, and surface roughness has an important influence on the texture of the MgO layer. We studied Hastelloy C-276 metal alloy as the substrate. The untreated substrate is leveled by either electropolishing, mechanical polishing or solution deposition. All three methods are applied to continuously moving tapes in long lengths. The RMS surface roughness decreases from 20-50 nm for the untreated substrate to 0.5 nm, 0.3 nm and 1 nm respectively. The in-plane and out-of plane crystalline alignment of the MgO layer improves as the roughness is decreased below 2 nm.

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Significant texture improvement in single-crystalline-like materials on low-cost flexible metal foils through growth of silver thin films

Journal of Applied Crystallography ◽

10.1107/s1600576719007295 ◽

2019 ◽

Vol 52 (4) ◽

pp. 898-902 ◽

Cited By ~ 1

Author(s):

Yongkuan Li ◽

Sicong Sun ◽

Ying Gao ◽

Yao Yao ◽

Eduard Galstyan ◽

...

Keyword(s):

High Performance ◽

Low Cost ◽

Ion Beam ◽

High Temperature Superconductors ◽

Single Crystalline ◽

Metal Foils ◽

Ion Beam Assisted Deposition ◽

Out Of Plane ◽

Flexible Metal ◽

Ag Film

Low texture spreads of single-crystalline-like materials are critical for high performance of low-cost flexible semiconductors and second-generation high-temperature superconductors based on metal foils. For texture improvement, a single-crystalline-like Ag film is epitaxially grown on an ion-beam-assisted deposition TiN substrate using magnetron sputtering. Ultra-low texture spreads are found in the thin Ag film (∼330 nm), with an out-of-plane texture spread (Δω) of ∼1.03° and an in-plane texture spread (Δϕ) of ∼1.34°. Compared with the texture spreads of the TiN substrate, Δω and Δϕ of the Ag film are reduced by ∼42 and ∼79%, respectively. Applying this Ag buffer, the texture spreads of a single-crystalline-like Ge film are reduced by ∼37% (Δω) and ∼36% (Δϕ). Factors contributing to the texture improvement by Ag are studied using single-crystalline-like Ag films with various thicknesses.

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Aluminum metallization for flat-panel displays using ion-beam-assisted physical vapor deposition

Journal of Materials Research ◽

10.1557/jmr.1999.0547 ◽

1999 ◽

Vol 14 (10) ◽

pp. 4051-4061 ◽

Cited By ~ 14

Author(s):

Zhenqiang Ma ◽

Gary S. Was

Keyword(s):

Vapor Deposition ◽

Physical Vapor Deposition ◽

Ion Beam ◽

Surface Topology ◽

Aluminum Films ◽

Force Microscopy ◽

Ion Beam Assisted Deposition ◽

Out Of Plane ◽

Aluminum Metallization ◽

Display Control

Failures in aluminum interconnects in display control devices are often caused by the formation of hillocks during postdeposition annealing. Ion-beam-assisted deposition was used to create a (110) out-of-plane texture in aluminum films to suppress hillocking. X-ray diffraction was used to quantify the (110)/(111) out-of-plane texture ratio, and scanning electron microscopy and atomic force microscopy were used to characterize the surface topology. Results show that no hillocks were observed on (110)-textured aluminum films following annealing for 30 min at 450 °C. Following annealing, the resistivity of the films made by ion-beam-assisted deposition recovered to within a factor of 2 of the physical-vapor-deposition films. Results show that ion-beam-assisted deposition can effectiv09ely modify the aluminum out-of-plane texture in such a way that hillock suppression can be achieved without significant change in resistivity.

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High critical current density YBa2Cu3O7δ thick films using ion beam assisted deposition MgO bi-axially oriented template layers on nickel-based superalloy substrates

Journal of Materials Research ◽

10.1557/jmr.2001.0295 ◽

2001 ◽

Vol 16 (8) ◽

pp. 2175-2178 ◽

Cited By ~ 30

Author(s):

J. R. Groves ◽

P. N. Arendt ◽

S. R. Foltyn ◽

Q. X. Jia ◽

T. G. Holesinger ◽

...

Keyword(s):

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Ion Beam ◽

Continuous Process ◽

Coated Conductors ◽

Nickel Based Superalloy ◽

Ion Beam Assisted Deposition ◽

Out Of Plane ◽

Amorphous Si

Nickel-based superalloys have been coated with magnesium oxide (MgO) using ion-beam-assisted deposition (IBAD). This technique produced a well-oriented bi-axially textured MgO template layer with a Ф scan full width half maximum of 6.4°. The layer architecture for these samples was as follows: polished hastelloy C276/amorphous Si3N4/IBAD MgO/ pulsed laser deposited (PLD) Y2O3–ZrO2/PLD CeO2/PLD YBa2Cu3O7?δ. The subsequent heteroepitaxial PLD of 1.5-mm-thick YBCO showed a nominal critical current density of over 1 MA/cm2 (75 K, self-field) along a microbridge and had an in-plane mosaic spread of 4.8° and an out-of-plane spread of 1.3°. These results compare well with our earlier work using IBAD yttria-stabilized zirconia (YSZ) as a template layer and indicate that IBAD MgO is a suitable substitute. Furthermore, these results suggest that IBAD MgO could be adapted to and increase the feasibility of a continuous process to fabricate longer lengths of coated conductors at speeds 100 times faster than that previously realized with IBAD YSZ.

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