Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering

2018 ◽  
Vol 462 ◽  
pp. 799-803 ◽  
Author(s):  
Tong Zhang ◽  
Lei Wang ◽  
Xiaobo Li ◽  
Yuyu Bu ◽  
Taofei Pu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Reactive Sputtering ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Positive Threshold ◽  
Gan Hemts ◽  
P Type

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

2019 ◽  
Vol 66 (6) ◽  
pp. 2544-2550 ◽  
Author(s):  
Sayak Dutta Gupta ◽  
Ankit Soni ◽  
Vipin Joshi ◽  
Jeevesh Kumar ◽  
Rudrarup Sengupta ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Stack ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Mode Operation ◽  
Positive Threshold ◽  
Gan Hemts

Performance of ZnO TFTs with AlN as Insulator

2007 ◽  
Vol 1035 ◽  
Author(s):  
Maria Merlyne De Souza ◽  
Richard B Cross ◽  
Suhas Jejurikar ◽  
K P Adhi
Keyword(s):  
Surface Roughness ◽  
Threshold Voltage ◽  
Rf Sputtering ◽  
Interface States ◽  
Aluminium Nitride ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Positive Threshold ◽  
The Stability

AbstractThe performance of ZnO TFTs fabricated via RF sputtering, with Aluminium Nitride (AlN) as the underlying insulator are reported. The surface roughness of ZnO with AlN is lower than that with SiN by at least 5 times, and that with SiO2 by 30 times. The resulting mobility for the three insulators AlN, SiN, SiO2 using identical process is found to be 3, 0.2-0.7 and 0.1-0.25 cm2/Vs respectively. There does not appear to be any corresponding improvement in the stability of the AlN devices. The devices demonstrate significant positive threshold voltage shift with positive gate bias and negative threshold voltage shift with negative gate bias. The underlying cause is surmised to be ultra-fast interface states in combination with bulk traps in the ZnO.

Positive Threshold-Voltage Shift of Y2O3Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs

2014 ◽  
Vol 3 (6) ◽  
pp. Q120-Q126 ◽  
Author(s):  
M. K. Bera ◽  
Y. Liu ◽  
L. M. Kyaw ◽  
Y. J. Ngoo ◽  
S. P. Singh ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Positive Threshold ◽  
Gan On Si

Mechanisms of Hot-Carrier-Induced Threshold-Voltage Shift in High-Voltage p-Type LDMOS Transistors

2009 ◽  
Vol 56 (12) ◽  
pp. 3203-3206 ◽  
Author(s):  
Jone F. Chen ◽  
Kuen-Shiuan Tian ◽  
Shiang-Yu Chen ◽  
Kuo-Ming Wu ◽  
J. R. Shih ◽  
...  
Keyword(s):  
High Voltage ◽  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Hot Carrier ◽  
P Type

Over 1200 V Normally-OFF p-NiO gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift

2021 ◽  
pp. 1-1
Author(s):  
Hui Guo ◽  
Hehe Gong ◽  
Pengfei Shao ◽  
Xinxin Yu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gan Hemts

scholarly journals A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Bradley D. Christiansen ◽  
Eric R. Heller ◽  
Ronald A. Coutu ◽  
Ramakrishna Vetury ◽  
Jeffrey B. Shealy
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Drain Current ◽  
Conventional Wisdom ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Bias Stress ◽  
Gan Hemt ◽  
Positive Threshold ◽  
Gan Hemts

Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

Sign in / Sign up

Export Citation Format

Share Document