Positive Threshold-Voltage Shift of Y2O3Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs
2014 ◽
Vol 3
(6)
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pp. Q120-Q126
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2018 ◽
Vol 462
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pp. 799-803
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2019 ◽
Vol 66
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pp. 2544-2550
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2010 ◽
Vol 49
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pp. 04DC24
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2008 ◽
Vol 47
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pp. 2103-2107
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2008 ◽
Vol 47
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pp. 3189-3192
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