Bioprospecting lipid-producing microorganisms: from metagenomic-assisted isolation techniques to industrial application and innovations

2021 ◽  
pp. 126455
Author(s):  
Carlos Ricardo Soccol ◽  
Brigitte Sthepani Orozco Colonia ◽  
Gilberto Vinícius de Melo Pereira ◽  
Luis Daniel Goyzueta Mamani ◽  
Susan Grace Karp ◽  
...  
Keyword(s):  
Industrial Application ◽  
Isolation Techniques

Mechanism of irregular crack-propagation in thermal controlled fracture of ceramics induced by microwave

2020 ◽  
Vol 21 (6) ◽  
pp. 610
Author(s):  
Xiaoliang Cheng ◽  
Chunyang Zhao ◽  
Hailong Wang ◽  
Yang Wang ◽  
Zhenlong Wang
Keyword(s):  
Crack Propagation ◽  
Industrial Application ◽  
Ceramic Materials ◽  
Advanced Technology ◽  
Analytical Models ◽  
Propagation Mechanism ◽  
Unstable Crack ◽  
Fracture Simulation ◽  
Initial Stage ◽  
Controlled Fracture

Microwave cutting glass and ceramics based on thermal controlled fracture method has gained much attention recently for its advantages in lower energy-consumption and higher efficiency than conventional processing method. However, the irregular crack-propagation is problematic in this procedure, which hinders the industrial application of this advanced technology. In this study, the irregular crack-propagation is summarized as the unstable propagation in the initial stage, the deviated propagation in the middle stage, and the non-penetrating propagation in the end segment based on experimental work. Method for predicting the unstable propagation in the initial stage has been developed by combining analytical models with thermal-fracture simulation. Experimental results show good agreement with the prediction results, and the relative deviation between them can be <5% in cutting of some ceramics. The mechanism of deviated propagation and the non-penetrating propagation have been revealed by simulation and theoretical analysis. Since this study provides effective methods to predict unstable crack-propagation in the initial stage and understand the irregular propagation mechanism in the whole crack-propagation stage in microwave cutting ceramics, it is of great significance to the industrial application of thermal controlled fracture method for cutting ceramic materials using microwave.

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim
Keyword(s):  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Isolation Techniques ◽  
Super Conducting ◽  
Non Destructive

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

Laser Failure Isolation Techniques Demonstrated On Test Structures

2008 ◽  
Author(s):  
Frank S. Arnold
Keyword(s):  
Integrated Circuits ◽  
Laser Beam ◽  
Case Studies ◽  
Induced Resistance ◽  
Simple Test ◽  
Resistance Change ◽  
Cross Sectional ◽  
Beam Focusing ◽  
Isolation Techniques ◽  
Heating Effects

Abstract To be better prepared to use laser based failure isolation techniques on field failures of complex integrated circuits, simple test structures without any failures can be used to study Optical Beam Induced Resistance Change (OBIRCH) results. In this article, four case studies are presented on the following test structures: metal strap, contact string, VIA string, and comb test structure. Several experiments were done to investigate why an OBIRCH image was seen in certain areas of a VIA string and not in others. One experiment showed the OBRICH variation was not related to the cooling and heating effects of the topology, or laser beam focusing. A 4 point probe resistance measurement and cross-sectional views correlated with the OBIRCH results and proved OBIRCH was able to detect a variation in VIA fabrication.

Advanced Scan Diagnosis Based Fault Isolation and Defect Identification for Yield Learning

2005 ◽  
Author(s):  
Chris Eddleman ◽  
Nagesh Tamarapalli ◽  
Wu-Tung Cheng
Keyword(s):  
Failure Analysis ◽  
Fault Location ◽  
Effective Means ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Yield Analysis ◽  
Isolation Techniques ◽  
Yield Learning ◽  
Time Required ◽  
Inspection Data

Abstract Yield analysis of sub-micron devices is an ever-increasing challenge. The difficulty is compounded by the lack of in-line inspection data as many companies adopt foundry or fab-less models for acquiring wafers. In this scenario, failure analysis is increasingly critical to help drive yields. Failure analysis is a process of fault isolation, or a method of isolating failures as precisely as possible followed by identification of a physical defect. As the number of transistors and metal layers increase, traditional fault isolation techniques are less successful at isolating a cause of failures. Costs are increasing due to the amount of time needed to locate the physical defect. One solution to the yield analysis problem is scan diagnosis based fault isolation. Previous scan diagnosis based techniques were limited with little information about the type of fault and confidence of diagnosis. With new scan diagnosis algorithms it is now possible to not only isolate, but to identify the type of fault as well as assigning a confidence ranking prior to any destructive analysis. This paper presents multiple case studies illustrating the application of scan diagnosis as an effective means to achieve yield enhancement. The advanced scan diagnostic tool used in this study provides information about the fault type as well as fault location. This information focuses failure analysis efforts toward a suspected defect, decreasing the cycle time required to determine root cause, as well as increasing the over all success rate.

A Novel OBIRCH Fault Isolation Method to Locate the Leakage Failure Point

2008 ◽  
Author(s):  
Chi-Lin Huang ◽  
Yu Hsiang Shu
Keyword(s):  
Semiconductor Device ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cross Sectional ◽  
Isolation Technique ◽  
Isolation Techniques ◽  
Atomic Force ◽  
Analysis Experiment ◽  
Failure Point ◽  
Leakage Failure

Abstract Conventional isolation techniques, such as Optical Beam Induced Resistance Change (OBIRCH) or photoemission microscopy (PEM) frequently fail to locate failure points when only applied to power pin of the semiconductor device. In this paper, a novel OBIRCH failure isolation technique is utilized to detect leakage failures. Different test conditions are presented to identify the differences in current when all input pins are pulled high in an OBIRCH system. In order to verify a failure point, it is necessary to perform electrical analysis of the suspected failure point in the failing sample. In general, Conductive Atomic Force Microscope (C-AFM) and a Nano-Prober is sufficient to provide the electrical data required for failure analysis. Experiment results, however, prove that this novel OBIRCH failure isolation technique is effective in locating the failure point, especially for leakage failures. The failure mechanism is illustrated using cross-sectional TEM.

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