scholarly journals Influence of the ultra-slow nucleation and growth dynamics on the room-temperature hysteresis of spin-crossover single crystals

2021 ◽  
pp. 138442
Author(s):  
Volodymyr M. Hiiuk ◽  
Karl Ridier ◽  
Il'ya A. Gural'skiy ◽  
Alexander A. Golub ◽  
Igor O. Fritsky ◽  
...  
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Spin Crossover ◽  
Growth Dynamics ◽  
Nucleation And Growth ◽  
Temperature Hysteresis

Scan-rate and vacuum pressure dependence of the nucleation and growth dynamics in a spin-crossover single crystal: the role of latent heat

2018 ◽  
Vol 20 (14) ◽  
pp. 9139-9145 ◽  
Author(s):  
Karl Ridier ◽  
Sylvain Rat ◽  
Lionel Salmon ◽  
William Nicolazzi ◽  
Gábor Molnár ◽  
...  
Keyword(s):  
Heat Exchange ◽  
Single Crystal ◽  
Pressure Dependence ◽  
Spin Crossover ◽  
Growth Dynamics ◽  
Nucleation And Growth ◽  
Switching Dynamics ◽  
Scan Rate ◽  
Hysteresis Properties

A heat exchange dependence was evidenced on both the hysteresis properties and the switching dynamics of a spin-crossover single crystal.

scholarly journals Thermal spin-crossover with a large hysteresis spanning room temperature in a mononuclear complex

2017 ◽  
Vol 53 (35) ◽  
pp. 4763-4766 ◽  
Author(s):  
E. Tailleur ◽  
M. Marchivie ◽  
N. Daro ◽  
G. Chastanet ◽  
P. Guionneau
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Spin Crossover ◽  
Mononuclear Complex ◽  
Large Hysteresis

The substitution of sulphur by selenium leads to spin-crossover single-crystals exhibiting a large hysteresis centred at room temperature.

Dislocation structures around SiO2 Particles in aged Cu-Cr-SiO2

1978 ◽  
Vol 36 (1) ◽  
pp. 594-595
Author(s):  
N.J. Long ◽  
M.H. Loretto ◽  
C.H. Lloyd
Keyword(s):  
Flow Stress ◽  
Single Crystals ◽  
Room Temperature ◽  
Thin Foil ◽  
Age Hardening ◽  
Dispersion Strengthening ◽  
Accurate Picture ◽  
The Matrix ◽  
Very High ◽  
Good Agreement

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.

Bright field and weak-beam images of dislocations gliding on (001) planes in F.C.C. metals

1978 ◽  
Vol 36 (1) ◽  
pp. 352-353
Author(s):  
H. P. Karnthaler ◽  
A. Korner
Keyword(s):  
Single Crystals ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Stage Ii ◽  
Bright Field ◽  
Weak Beam ◽  
Standard Orientation

In f.c.c. metals slip is observed to occur generally on {111} planes. Glide dislocations on intersecting {111} planes can react with each other and form Lomer-Cottrell locks which lie along a <110> direction and are sessile since they are split on two {111} planes. Cottrell already pointed out that these dislocations could glide on {001} planes if they were not split. The first study of this phenomenon has been published recently. It is the purpose of this paper to report some interesting new details of the dislocations gliding on {001} planes in pure Ni, Cu, and Ag deformed at room temperature.Single crystals are grown with standard orientation and strained into stage II. The crystals are sliced parallel to the (001) planes. The dislocation structure is studied by TEM and the Burgers vectors ḇ and glide planes of the dislocations are determined unambiguously.In Fig.l primary P and secondary S dislocations react and form composite dislocations K.

Spherulite Structures in a Melt Spun Fe-Ni Austenitic Steel

1985 ◽  
Vol 43 ◽  
pp. 52-53
Author(s):  
G. M. Michal ◽  
T. K. Glasgow ◽  
T. J. Moore
Keyword(s):  
Austenitic Steel ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Large Range ◽  
Amorphous Structure ◽  
Nucleation And Growth ◽  
Ni Alloys ◽  
Melt Spun ◽  
Crystal Fibers ◽  
Rapidly Solidified

Large additions of B to Fe-Ni alloys can lead to the formation of an amorphous structure, if the alloy is rapidly cooled from the liquid state to room temperature. Isothermal aging of such structures at elevated temperatures causes crystallization to occur. Commonly such crystallization pro ceeds by the nucleation and growth of spherulites which are spherical crystalline bodies of radiating crystal fibers. Spherulite features were found in the present study in a rapidly solidified alloy that was fully crysstalline as-cast. This alloy was part of a program to develop an austenitic steel for elevated temperature applications by strengthening it with TiB2. The alloy contained a relatively large percentage of B, not to induce an amorphous structure, but only as a consequence of trying to obtain a large volume fracture of TiB2 in the completely processed alloy. The observation of spherulitic features in this alloy is described herein. Utilization of the large range of useful magnifications obtainable in a modern TEM, when a suitably thinned foil is available, was a key element in this analysis.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Effect of trytophan as dopant on potassium acid phthalate single crystals

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Visible Region ◽  
X Ray Diffraction ◽  
X Ray ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Evaporation Technique ◽  
Potassium Acid Phthalate ◽  
Acid Phthalate

Optically transparent single crystals of potassium acid phthalate (KAP, 0.5 g) 0.05 g and 0.1 g (1 and 2 mol %) trytophan were grown in aqueous solution by slow evaporation technique at room temperature. Single crystal X- ray diffraction analysis confirmed the changes in the lattice parameters of the doped crystals. The presence of functional groups in the crystal lattice has been determined qualitatively by FTIR analysis. Optical absorption studies revealed that the doped crystals possess very low absorption in the entire visible region. The dielectric constant has been studied as a function of frequency for the doped crystals. The thermal stability was evaluated by TG-DSC analysis.

Room-temperature synthesis, growth mechanisms and opto-electronic properties of organic–inorganic halide perovskite CH3NH3PbX3 (X = I, Br, and Cl) single crystals

CrystEngComm ◽  
2021 ◽  
Author(s):  
Maryam Bari ◽  
Hua Wu ◽  
Alexei A. Bokov ◽  
Rana Faryad Ali ◽  
Hamel N. Tailor ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Single Crystals ◽  
Room Temperature ◽  
Solubility Curve ◽  
Inverse Temperature ◽  
Growth Mechanisms ◽  
Temperature Synthesis ◽  
Room Temperature Synthesis ◽  
Halide Perovskite ◽  
Temperature Crystallization

Growth of MAPbX3 (X = I, Br, and Cl) single crystals by room temperature crystallization (RTC) method, and the crystallization pathway illustrated by the solubility curve of MAPbCl3 in DMSO, compared with inverse temperature crystallization (ITC) method.

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