Ion beam-induced luminescence as method of characterization of radiation damage in polycrystalline materials

Transmission electron microscopy is an important approach to the characterization of the morphology of multiphase latices. Various sample preparation techniques have been applied to multiphase latices such as OsO4, RuO4 and CsOH stains to distinguish the polymer phases or domains. Radiation damage by an electron beam of latices imbedded in ice has also been used as a technique to study particle morphology. Further studies have been developed in the use of freeze-fracture and the effect of differential radiation damage at liquid nitrogen temperatures of the latex particles embedded in ice and not embedded.Two different series of two-stage latices were prepared with (1) a poly(methyl methacrylate) (PMMA) seed and poly(styrene) (PS) second stage; (2) a PS seed and PMMA second stage. Both series have varying amounts of second-stage monomer which was added to the seed latex semicontinuously. A drop of diluted latex was placed on a 200-mesh Formvar-carbon coated copper grid.

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Interface structures in polycrystalline ceramic materials

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100143900 ◽

1986 ◽

Vol 44 ◽

pp. 468-471

Author(s):

K. J. Morrissey

Keyword(s):

Electron Microscopy ◽

Analytical Electron Microscopy ◽

Physical And Mechanical Properties ◽

High Resolution Electron Microscopy ◽

Ceramic Materials ◽

Polycrystalline Materials ◽

Transmission Electron ◽

Resolution Electron ◽

Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

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Preparation and characterization of thin films of carbon nitride

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100136891 ◽

1995 ◽

Vol 53 ◽

pp. 104-105

Author(s):

L. Wan ◽

R. F. Egerton

Keyword(s):

Carbon Nitride ◽

Arc Discharge ◽

Ion Beam ◽

Chemical Vapor ◽

Reactive Sputtering ◽

Vacuum Arc ◽

Specimen Preparation ◽

Bonding Structure ◽

Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

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Characterization of defects in tabular silver halide grains

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100178367 ◽

1990 ◽

Vol 48 (4) ◽

pp. 1046-1047

Author(s):

C. Goessens ◽

D. Schryvers ◽

J. Van Landuyt ◽

A. Verbeeck ◽

R. De Keyzer

Keyword(s):

Radiation Damage ◽

Silver Halide ◽

Chemical Characteristics ◽

X Ray ◽

Free Region ◽

Central Defect ◽

Crystallographic Defects ◽

Physical And Chemical ◽

Two Sides

Silver halide grains (AgX, X=Cl,Br,I) are commonly recognized as important entities in photographic applications. Depending on the preparation specifications one can grow cubic, octahedral, tabular a.o. morphologies, each with its own physical and chemical characteristics. In the present study crystallographic defects introduced by the mixing of 5-20% iodide in a growing AgBr tabular grain are investigated. X-ray diffractometry reveals the existence of a homogeneous Ag(Br1-xIx) region, expected to be formed around the AgBr kernel. In fig. 1 a two-beam BF image, taken at T≈100 K to diminish radiation damage, of a triangular tabular grain is presented, clearly showing defect contrast fringes along four of the six directions; the remaining two sides show similar contrast under relevant diffraction conditions. The width of the central defect free region corresponds with the pure AgBr kernel grown before the mixing with I. The thickness of a given grain lies between 0.15 and 0.3 μm: as indicated in fig. 2 triangular (resp. hexagonal) grains exhibit an uneven (resp. even) number of twin interfaces (i.e., between + and - twin variants) parallel with the (111) surfaces. The thickness of the grains and the existence of the twin variants was confirmed from CTEM images of perpendicular cuts.

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Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0081 ◽

2009 ◽

Author(s):

E. Hendarto ◽

S.L. Toh ◽

J. Sudijono ◽

P.K. Tan ◽

H. Tan ◽

...

Keyword(s):

Electron Microscope ◽

Focused Ion Beam ◽

Failure Modes ◽

Ion Beam ◽

Electrical Characterization ◽

Nickel Silicide ◽

Fault Isolation ◽

Technology Nodes ◽

Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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Physical Failure Analysis Techniques for Front-End-of-Line Defect Analysis

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0182 ◽

2016 ◽

Author(s):

Dirk Doyle ◽

Lawrence Benedict ◽

Fritz Christian Awitan

Keyword(s):

Cross Section ◽

Focused Ion Beam ◽

Ion Beam ◽

Gate Oxide ◽

Top Down ◽

New Techniques ◽

First Case ◽

Transmission Electron ◽

Scanning Transmission

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.

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