Josephson junctions fabricated by focused ion beam from ex situ grown MgB2 thin films

2004 ◽  
Vol 405 (1) ◽  
pp. 84-88 ◽  
Author(s):  
A Malisa ◽  
M Valkeapää ◽  
L.-G Johansson ◽  
Zdravko Ivanov
Keyword(s):  
Thin Films ◽  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ex Situ ◽  
Mgb2 Thin Films

FABRICATION OF JOSEPHSON JUNCTIONS ON MgB2 THIN FILMS USING FOCUSED-ION-BEAM (FIB)

2005 ◽  
Vol 19 (01n03) ◽  
pp. 391-394
Author(s):  
SANG-JAE KIM ◽  
GUI-SIK KIM ◽  
YOSHIHIKO TAKANO ◽  
SHUNICHI ARISAWA ◽  
KYUNG-SUNG YUN ◽  
...  
Keyword(s):  
Thin Films ◽  
Josephson Junctions ◽  
Josephson Effect ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Voltage Frequency ◽  
Mgb2 Thin Films

We fabricated nano-bridges on MgB 2 thin films so as to demonstrate Josephson effect. Those bridges smaller than 200 nm widths show the resistively-shunted-junction (RSJ)-like current (I)-voltage (V) curves with hysteresis. We also observed a few of microwave-induced steps that correspond to the Josephson voltage-frequency relations at 33 K.

Delamination and Buckling Induced by Compressive Strain in Metal Thin Films

2005 ◽  
Vol 490-491 ◽  
pp. 655-660 ◽  
Author(s):  
Yao Gen Shen
Keyword(s):  
Thin Films ◽  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Compressive Strain ◽  
Ex Situ ◽  
Metal Thin Films ◽  
Force Microscopy ◽  
Steady Growth ◽  
Sputter Deposited

The pattern formation during delamination and buckling in sputter-deposited tungsten thin films under large compressive stresses was investigated. The films were analyzed in situ by a cantilever beam technique, and ex situ by atomic force microscopy (AFM) and focused ion beam. Depending on the magnitude of compressive strain in thin films, different types of buckling patterns were observed. For stresses above a critical value, there was a regime of steady growth in which the incipient blister evolves into a regular sinusoidal-like propagation. At higher strains, the sinusoidallike wrinkles were developed with constant widths and wavelengths. Some of the wrinkles bifurcated to form branches. With further increase in stress the complicated buckling patches were formed with many irregular lobes. These types of pattern formation have been supported by elastic energy calculations.

Mechanical Properties of Electroplated Copper Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
R. Spolenak ◽  
C. A. Volkert ◽  
K. Takahashi ◽  
S. Fiorillo ◽  
J. Miner ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Grain Size ◽  
Film Thickness ◽  
Yield Stress ◽  
Laser Scanning ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cu Films ◽  
Electroplated Copper

AbstractIt is well known that the mechanical properties of thin films depend critically on film thickness However, the contributions from film thickness and grain size are difficult to separate, because they typically scale with each other. In one study by Venkatraman and Bravman, Al films, which were thinned using anodic oxidation to reduce film thickness without changing grain size, showed a clear increase in yield stress with decreasing film thickness.We have performed a similar study on both electroplated and sputtered Cu films by using chemical-mechanical polishing (CMP) to reduce the film thickness without changing the grain size. Stress-temperature curves were measured for both the electroplated and sputtered Cu films with thicknesses between 0.1 and 1.8 microns using a laser scanning wafer curvature technique. The yield stress at room temperature was found to increase with decreasing film thickness for both sets of samples. The sputtered films, however, showed higher yield stresses in comparison to the electroplated films. Most of these differences can be attributed to the different microstructures of the films, which were determined by focused ion beam (FIB) microscopy and x-ray diffraction.

PLANAR JOSEPHSON JUNCTIONS FABRICATED BY FOCUSED-ION BEAM

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3359-3360 ◽  
Author(s):  
Hye-Won Seo ◽  
Quark Y. Chen ◽  
Chong Wang ◽  
Wei-Kan Chu ◽  
T. M. Chuang ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Spot Size ◽  
Physical Significance ◽  
Fabrication Technique ◽  
Beam Spot ◽  
Beam Spot Size ◽  
Current Voltage

We have fabricated nano-scaled planar superconductor-insulator-superconductor Josephson junctions using focused ion beam (FIB) with beam spot size ~5 nm . To study the effectiveness of this fabrication technique and for the purpose of comparisons, a variety of samples have been made based on high temperature superconducting (HTS) YBa2Cu3O7-δ electrodes. The insulators are either vacuum or silicon dioxide. The samples showed current-voltage (IV) characteristics typical of a resistively shunted junction (RSJ). We will discuss various aspects of the processing methods and the physical significance of the junction characteristics.

Effects of P Content on Morphology of Nanocrystals Induced by FIB Irradiation in Ni-P Amorphous Alloy

2006 ◽  
Vol 960 ◽  
Author(s):  
Koji Sato ◽  
Chiemi Ishiyama ◽  
Masato Sone ◽  
Yakichi Higo
Keyword(s):  
Thin Films ◽  
Amorphous Alloy ◽  
Crystallographic Orientation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Orientation Relationships ◽  
Beam Direction ◽  
Precipitation Distribution ◽  
P Content

ABSTRACTWe studied the effects of phosphorus (P) on Ni nanocrystalline morphology formed by focused ion beam (FIB) irradiation for Ni-P amorphous alloy thin films. The P content in the amorphous alloy was varied from 8 to 12 wt.%. The nanocrystals induced by the FIB irradiation for Ni-11.8, 8.9, 7.9 wt.% amorphous alloy had an f.c.c. structure and showed unique crystallographic orientation relationships to the geometry of the focused ion beam, that is, {111}f.c.c. parallel to the irradiated plane and <110>f.c.c. parallel to the projected ion beam direction, respectively. The Ni nanocrystals precipitated like aggregates with decreasing of the P content. These results represent that the P content does not affect crystallographic orientation relationships, while influences the precipitation distribution of Ni nanocrystals generated by the FIB irradiation.

scholarly journals Computer-Controlled Polishing System For Preparing Multiple Pre-FIB TEM Specimens

2007 ◽  
Vol 15 (6) ◽  
pp. 38-39
Author(s):  
D. J. MacMahon ◽  
E. Raz-Moyal
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Product Yield ◽  
Interface Layer ◽  
Ex Situ ◽  
Advantages And Disadvantages ◽  
Transmission Electron ◽  
Invaluable Tool ◽  
Electron Microscopes

Semiconductor manufacturers are increasingly turning to Transmission Electron Microscopes (TEMs) to monitor product yield and process control, analyze defects, and investigate interface layer morphology. To prepare TEM specimens, Focused Ion Beam (FIB) technology is an invaluable tool, yielding a standard milled TEM lamella approximately 15 μm wide, 5 μm deep and ~100 nm thick. Several techniques have been developed to extract these tiny objects from a large wafer and view it in the TEM. These techniques, including ex-situ lift-out, H-bar, and in-situ lift-out, have different advantages and disadvantages, but all require painstaking preparation of one specimen at a time.

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