Surface study by UHV electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 458-459
Author(s):  
K. Yagi ◽  
K. Takayanagi ◽  
K. Kobayashi ◽  
N. Osakabe ◽  
Y. Tanishiro ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Film Growth ◽  
Atomic Layer ◽  
Chemical Compositions ◽  
Surface Phenomena ◽  
Transmission Electron ◽  
In Situ Deposition ◽  
Complementary Role ◽  
Atomically Flat

Recent advances of UHV techniques, LEED, RHEED and AES, arose a surge of interest on the surface of solids. These techniques reveal structures and chemical compositions at the mono-atomic or mono-molecular level. All of them, however, are devoid of detailed topographic informations, although some efforts to introduce the scanning techniques have been done[l]. Transmission electron microscopy of high resolution should play a complementary role to these techniques. No attempt, however, has been done previously to use it to such a purpose. This was because it was difficult to get and keep clean surfaces in the poor vacuum at 1x10-5 Torr level of the conventional electron microscope.The present paper reports observations of surface phenomena of one or two atomic layer level using a UHV JEM 100B electron microscope (10-8 -10-10Torr), recently developed for insitu thin film growth studies[2]. Atomically flat (111) surfaces of Ag, Pd, Au and Cu were prepared by in- situ deposition at 150-350°C on M0S2, graphite and MgO. Air Cleaved thin films of MoS2 and graphite were preheated to 800°C to get clean surfaces[3].

scholarly journals Donald William Pashley. 21 April 1927 — 16 May 2009

2010 ◽  
Vol 56 ◽  
pp. 317-340 ◽  
Author(s):  
Bruce A. Joyce ◽  
Michael J. Stowell
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Film Growth ◽  
Epitaxial Thin Films ◽  
Disorder Effects ◽  
Transmission Electron ◽  
Innovative Materials ◽  
Low Dimensional

Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investigations, work that contributed enormously to our understanding of film growth processes. He pioneered the use of moiré patterns to reveal dislocations and other defects. He also made important contributions to long-range disorder effects on semiconductor surfaces and to the structure of low-dimensional semiconductor systems.

Synthesis, Analysis, Transport and Field emission Measurements of Compound B-C-N Nanotubes

2003 ◽  
Vol 772 ◽  
Author(s):  
Dmitri Golberg ◽  
Yoshio Bando ◽  
Pavel Dorozhkin ◽  
Zhen-Chao Dong ◽  
Cheng-Chun Tang ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Field Emission ◽  
Chemical Compositions ◽  
Scanning Tunnelling Microscope ◽  
Field Emission Properties ◽  
Transmission Electron ◽  
Scanning Tunnelling ◽  
Low Energy Electron ◽  
Electron Energy Loss

AbstractMultiwalled B-C-N nanotubes of various morphologies and chemical compositions were synthesized by reacting C-based nanotube templates with boron oxide and nitrogen at 1573 K- 2173 K. The nanotubes were thoroughly analysed using a high-resolution field-emission 300 kV transmission electron microscope (TEM), an energy-filtered field-emission 300 kV electron microscope (Omega filter), an electron energy loss spectrometer and an energy dispersion X-ray detector. Transport and field emission properties of the nanotubes were studied using a low energy electron point source microscope and via in-situ measurements in TEM equipped with a scanning tunnelling microscope (STM) unit.

In Situ Real Time Observation of Chemical Vapor Deposition Using an Environmental Transmission Electron Microscope

1995 ◽  
Vol 404 ◽  
Author(s):  
Jeff Drucker ◽  
Renu Sharma ◽  
Karl Weiss ◽  
B. L. Ramakrishna ◽  
John Kouvetakis
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Electron Beam Irradiation ◽  
Film Growth ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Transmission Electron

AbstractMaterial synthesis by chemical vapor deposition (CVD) in a number of material systems has been investigated in real time using an environmental transmission electron microscope (ETEM) with 3.8 Å resolution. Here, we will focus on two metal / insulator systems. Al CVD onto SiO2 from trimethyl amine alane and Au CVD from ethyl (trimethylphosphine) gold (I), also onto SiO2. For Al deposition, dendritic growth was observed for all pressure / substrate temperature combinations investigated for growth on untreated SiO2. Subsequent to reaction of the substrate surface with TiC14, almost immediate continuous Al film growth was observed. Growth rates for the Al film could be measured in situ by monitoring the evolution of the growth front at the Al/vacuum interface. In this system, very little enhancement in the metal film growth rate was observed as a consequence of electron beam irradiation for continuous films grown after TiCl4 pretreatment.. This dramatically contrasts with the case of Au CVD investigated. In this instance, growth rate enhancements of up to 150 times were observed during electron beam irradiation as compared to purely pyrolytic decomposition of the precursor on the insulator surface. This growth rate enhancement decreased monotonically with substrate temperature. We surmise that this effect is related to the ratio of precursor surface residence time prior to ecomposition to the probability of collision from the impinging electron beam.

Atomic Layer Deposition of thin Films Using Sequential Surface Reactions

2000 ◽  
Vol 616 ◽  
Author(s):  
S. M. George ◽  
J.D. Ferguson ◽  
J.W. Klaus
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Single Element ◽  
Transmission Electron ◽  
Layer Deposition

AbstractThin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.

A TEM study of the microstructure of avian eggshells

1992 ◽  
Vol 50 (2) ◽  
pp. 1102-1103
Author(s):  
S. Q. Xiao ◽  
S. Baden ◽  
A. H. Heuer
Keyword(s):  
Electron Microscope ◽  
Calcium Carbonate ◽  
Nucleation And Growth ◽  
Growth Mechanisms ◽  
Shell Surface ◽  
Thin Sections ◽  
Polycrystalline Metals ◽  
Transmission Electron ◽  
Nucleation And Growth Mechanisms

The avian eggshell is one of the most rapidly mineralizing biological systems known. In situ, 5g of calcium carbonate are crystallized in less than 20 hrs to fabricate the shell. Although there have been much work about the formation of eggshells, controversy about the nucleation and growth mechanisms of the calcite crystals, and their texture in the eggshell, still remain unclear. In this report the microstructure and microchemistry of avian eggshells have been analyzed using transmission electron microscope (TEM) and energy dispersive spectroscopy (EDS).Fresh white and dry brown eggshells were broken and fixed in Karnosky's fixative (kaltitanden) for 2 hrs, then rinsed in distilled H2O. Small speckles of the eggshells were embedded in Spurr medium and thin sections were made ultramicrotome.The crystalline part of eggshells are composed of many small plate-like calcite grains, whose plate normals are approximately parallel to the shell surface. The sizes of the grains are about 0.3×0.3×1 μm3 (Fig.l). These grains are not as closely packed as man-made polycrystalline metals and ceramics, and small gaps between adjacent grains are visible indicating the absence of conventional grain boundaries.

In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

1996 ◽  
Vol 54 ◽  
pp. 986-987
Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev
Keyword(s):  
Electron Microscope ◽  
Melt Spinning ◽  
Ternary Alloys ◽  
Solid Matrix ◽  
Eutectic System ◽  
In Situ Tem ◽  
In Situ Observation ◽  
Orientation Relationships ◽  
Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

Remote On-Line Control of a High-Voltage in situ Transmission Electron Microscope with A Rational User Interface

1996 ◽  
Vol 54 ◽  
pp. 384-385
Author(s):  
M.A. O’Keefe ◽  
J. Taylor ◽  
D. Owen ◽  
B. Crowley ◽  
K.H. Westmacott ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
User Interface ◽  
Transmission Electron Microscope ◽  
High Voltage ◽  
Materials Science ◽  
Transmission Electron ◽  
On Line ◽  
Electron Microscopes

Remote on-line electron microscopy is rapidly becoming more available as improvements continue to be developed in the software and hardware of interfaces and networks. Scanning electron microscopes have been driven remotely across both wide and local area networks. Initial implementations with transmission electron microscopes have targeted unique facilities like an advanced analytical electron microscope, a biological 3-D IVEM and a HVEM capable of in situ materials science applications. As implementations of on-line transmission electron microscopy become more widespread, it is essential that suitable standards be developed and followed. Two such standards have been proposed for a high-level protocol language for on-line access, and we have proposed a rational graphical user interface. The user interface we present here is based on experience gained with a full-function materials science application providing users of the National Center for Electron Microscopy with remote on-line access to a 1.5MeV Kratos EM-1500 in situ high-voltage transmission electron microscope via existing wide area networks. We have developed and implemented, and are continuing to refine, a set of tools, protocols, and interfaces to run the Kratos EM-1500 on-line for collaborative research. Computer tools for capturing and manipulating real-time video signals are integrated into a standardized user interface that may be used for remote access to any transmission electron microscope equipped with a suitable control computer.

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

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