scholarly journals Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices

2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Lei Wang ◽  
CiHui Yang ◽  
Jing Wen ◽  
Shan Gai
Keyword(s):  
Flash Memory ◽  
Nonvolatile Memory ◽  
Cmos Technology ◽  
Information Storage ◽  
Storage Device ◽  
Scaling Limits ◽  
Fundamental Limits ◽  
Reading Methods ◽  
Nonvolatile Memories ◽  
Potential Applications

Continuous dimensional scaling of the CMOS technology, along with its cost reduction, has rendered Flash memory as one of the most promising nonvolatile memory candidates during the last decade. With the Flash memory technology inevitably approaching its fundamental limits, more advanced storage nanodevices, which can probably overcome the scaling limits of Flash memory, are being explored, bringing about a series of new paradigms such as FeRAM, MRAM, PCRAM, and ReRAM. These devices have indeed exhibited better scaling capability than Flash memory while also facing their respective physical drawbacks. The consequent tradeoffs therefore drive the information storage device technology towards further advancement; as a result, new types of nonvolatile memories, including carbon memory, Mott memory, macromolecular memory, and molecular memory have been proposed. In this paper, the nanomaterials used for these four emerging types of memories and the physical principles behind the writing and reading methods in each case are discussed, along with their respective merits and drawbacks when compared with conventional nonvolatile memories. The potential applications of each technology are also briefly assessed.

scholarly journals Estimation of Ge nanocrystals size by Raman, X-rays, and HRTEM techniques

2008 ◽  
Vol 14 (S3) ◽  
pp. 61-64 ◽  
Author(s):  
S.R.C. Pinto ◽  
P. Caldelas ◽  
A.G. Rolo ◽  
A. Chahboun ◽  
M.J.M. Gomes
Keyword(s):  
Flash Memory ◽  
Nonvolatile Memory ◽  
High Dielectric Constant ◽  
Memory Systems ◽  
X Rays ◽  
Processing Conditions ◽  
Flash Memories ◽  
Potential Applications ◽  
High Dielectric ◽  
Ge Nanocrystals

Ge NCs have attracted considerable attention because of their potential applications in nonvolatile memory and integrated optoelectronics. A number of groups have already proposed integrate flash memories based on Ge NCs embedded SiO2 matrix. Since Al2O3 presents a high dielectric constant comparatively to SiO2, it is a good candidate to replace silica in flash memory systems, and therefore improve their performances. Moreover, Al2O3 presents good mechanical properties, and supports high temperature, which leads it to be an ideal material for Si processing conditions. However, a few studies have been reported on Ge NCs embedded in Al2O3 matrix.

MODERN PROBLEMATICS AND ANALYSIS OF EFFICIENCY OF APPLICATION OF DIFFERENT APPROACHES TO DESTRUCTION OF INFORMATION ON MAGNETIC MEDIA

2019 ◽  
Vol 2 (12) ◽  
pp. 154-164
Author(s):  
O. Semenenko ◽  
O. Vodchyts ◽  
V. Koverga ◽  
R. Lukash ◽  
O. Lutsenko
Keyword(s):  
Armed Forces ◽  
Information Storage ◽  
Storage Device ◽  
Magnetic Media ◽  
Long Term Storage ◽  
Physical Impact ◽  
And Storage ◽  
Term Storage

The introduction and active use of information transmission and storage systems in the Ministry of Defense (MoD) of Ukraine form the need to develop ways of guaranteed removal of data from media after their use or long-term storage. Such a task is an essential component of the functioning of any information security system. The article analyzes the problems of guaranteed destruction of information on magnetic media. An overview of approaches to the guaranteed destruction of information on magnetic media of different types is presented, and partial estimates of the effectiveness of their application are given by some generally accepted indicators of performance evaluation. The article also describes the classification of methods of destruction of information depending on the influence on its medium. The results of the analysis revealed the main problems of application of software methods and methods of demagnetization of the information carrier. The issue of guaranteed destruction of information from modern SSD devices, which are actively used in the formation of new systems of information accumulation and processing, became particularly relevant in the article. In today's conditions of development of the Armed Forces of Ukraine, methods of mechanical and thermal destruction are more commonly used today. In the medium term, the vector of the use of information elimination methods will change towards the methods of physical impact by the pulsed magnetic field and the software methods that allow to store the information storage device, but this today requires specialists to develop new ways of protecting information in order to avoid its leakage.

Photo-induced variation of magnetism in coordination polymers with ligand-based electron transfer

2021 ◽  
Author(s):  
Yan-Lei Lu ◽  
Wen-Long Lan ◽  
Wei Shi ◽  
Qionghua Jin ◽  
Peng Cheng
Keyword(s):  
Electron Transfer ◽  
Coordination Polymers ◽  
Optical Memory ◽  
High Density ◽  
Information Storage ◽  
Memory Devices ◽  
Storage Materials ◽  
Potential Applications ◽  
Induced Variation

Photo-induced variation of magnetism from ligand-based electron transfer have been extensively studied because of their potential applications in magneto-optical memory devices, light-responsive switches, and high-density information storage materials. In this...

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO2 High-k Thin Films for Nonvolatile Memories

2008 ◽  
Vol 1071 ◽  
Author(s):  
Chia-Han Yang ◽  
Yue Kuo ◽  
Chen-Han Lin ◽  
Rui Wan ◽  
Way Kuo
Keyword(s):  
Nonvolatile Memory ◽  
Storage Capacity ◽  
Breakdown Strength ◽  
Charge Storage ◽  
Leakage Currents ◽  
Low Leakage ◽  
Nonvolatile Memories ◽  
High K ◽  
Memory Characteristics ◽  
Large Charge

AbstractSemiconducting or metallic nanocrystals embedded high-k films have been investigated. They showed promising nonvolatile memory characteristics, such as low leakage currents, large charge storage capacities, and long retention times. Reliability of four different kinds of nanocrystals, i.e., nc- Ru, -ITO, -Si and -ZnO, embedded Zr-doped HfO2 high-k dielectrics have been studied. All of them have higher relaxation currents than the non-embedded high-k film has. The decay rate of the relaxation current is in the order of nc-ZnO > nc-ITO > nc-Si > nc-Ru. When the relaxation currents of the nanocrystals embedded samples were fitted to the Curie-von Schweidler law, the n values were between 0.54 and 0.77, which are much lower than that of the non embedded high-k sample. The nanocrystals retain charges in two different states, i.e., deeply and loosely trapped. The ratio of these two types of charges was estimated. The charge storage capacity and holding strength are strongly influenced by the type of material of the embedded nanocrystals. The nc-ZnO embedded film holds trapped charges longer than other embedded films do. The ramp-relax result indicates that the breakdown of the embedded film came from the breakdown of the bulk high-k film. The type of nanocrystal material influences the breakdown strength.

What are the Potential Benefits of Including Latent Storage in Common Wallboard?

1995 ◽  
Vol 117 (4) ◽  
pp. 318-325 ◽  
Author(s):  
T. K. Stovall ◽  
J. J. Tomlinson
Keyword(s):  
Comfort Level ◽  
Load Management ◽  
Storage Device ◽  
Time Period ◽  
Payback Time ◽  
Potential Applications ◽  
Energy Penalty ◽  
Potential Benefits ◽  
Save Energy ◽  
Change Material

Previous work has shown that wallboard can be successfully manufactured to contain up to 30 percent phase-change material (PCM), or wax, thus enabling this common building material to serve as a thermal energy storage device. The PCM wallboard was analyzed for passive solar applications and found to save energy with a reasonable payback time period of five years. Further evaluations of the wallboard are reported in this paper. This analysis looks at potential applications of PCM wallboard as a load management device and as a comfort enhancer. Results show that the wallboard is ineffective in modifying the comfort level but can provide significant load management relief. In some applications the load management strategy also serves to save a small amount of energy, in others there is a small energy penalty.

A High Temp standalone 4MByte Flash memory with SPI Interface for 210C applications

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000066-000071
Author(s):  
Wade VonBergen ◽  
Madhu Basude
Keyword(s):  
Flash Memory ◽  
Critical Parameters ◽  
Storage Device ◽  
Hole Drilling ◽  
Data Logging ◽  
Cell Array ◽  
Flash Storage ◽  
High Level ◽  
Spi Interface

This paper covers the internal architecture, testability & performance characterization of Texas Instruments ™ High-Temp 210C 4MByte standalone Flash storage device. It will be available in a 14-pin ceramic dual Flat pack package as well as a Known Good Die (KGD) option. The device is manufactured in TI's 180nm 1.8V flash process with 3.3V IOs. The design implements 8 banks of flash organized into 2M × 16 bits surrounded by a SPI controller. The SPI controller interfaces asynchronously with an internal flash controller. The flash controller is clocked by FCLK, and controls the flash charge pump to access & operate the flash to program, read, erase, validate etc. The SPI controller is responsible for translating and executing the high level SPI protocol commands to the internal flash controller & its registers. A simple and flexible protocol was developed to access the flash array via the SPI supporting various commands and configuration capabilities. Testability of critical parameters for reliable 210C flash operation is ensured with the implementation of an internal test port accessible through a parallel interface (for TI Internal use only). The test port, and a SPI initiated BIST controller are used to provide full & comprehensive characterization of the flash bit cell array, as well as the flash-pump across temperature & frequencies. The form factor, size, and pin out of this flash device is primarily focused on data logging for narrow & space limited extreme harsh environments such as the down-hole drilling industry.

scholarly journals Evaluating Encryption Algorithms for Sensitive Data Using Different Storage Devices

2020 ◽  
Vol 2020 ◽  
pp. 1-9 ◽  
Author(s):  
Bahman A. Sassani (Sarrafpour) ◽  
Mohammed Alkorbi ◽  
Noreen Jamil ◽  
M. Asif Naeem ◽  
Farhaan Mirza
Keyword(s):  
Flash Memory ◽  
Full Range ◽  
Data Encryption ◽  
Storage Device ◽  
Sensitive Data ◽  
Hard Drives ◽  
Storage Devices ◽  
Aes Algorithm ◽  
Encryption Algorithms ◽  
Storage Encryption

Sensitive data need to be protected from being stolen and read by unauthorized persons regardless of whether the data are stored in hard drives, flash memory, laptops, desktops, and other storage devices. In an enterprise environment where sensitive data is stored on storage devices, such as financial or military data, encryption is used in the storage device to ensure data confidentiality. Nowadays, the SSD-based NAND storage devices are favored over HDD and SSHD to store data because they offer increased performance and reduced access latency to the client. In this paper, the performance of different symmetric encryption algorithms is evaluated on HDD, SSHD, and SSD-based NAND MLC flash memory using two different storage encryption software. Based on the experiments we carried out, Advanced Encryption Standard (AES) algorithm on HDD outperforms Serpent and Twofish algorithms in terms of random read speed and write speed (both sequentially and randomly), whereas Twofish algorithm is slightly faster than AES in sequential reading on SSHD and SSD-based NAND MLC flash memory. By conducting full range of evaluative tests across HDD, SSHD, and SSD, our experimental results can give better idea for the storage consumers to determine which kind of storage device and encryption algorithm is suitable for their purposes. This will give them an opportunity to continuously achieve the best performance of the storage device and secure their sensitive data.

Generation of Fuzzy Rules and Learning Algorithms for Servo Control in Holographic Data Storage System

2013 ◽  
Author(s):  
Jang Hyun Kim ◽  
Wooyoung Jeong ◽  
Hyunseok Yang
Keyword(s):  
Data Storage ◽  
Storage System ◽  
Optical Memory ◽  
Information Storage ◽  
Servo Control ◽  
Fuzzy Rules ◽  
Storage Device ◽  
Holographic Data Storage ◽  
Data Storage System ◽  
System 1

Today many media of information storage device are formed as disks. Hence, next generation removable data storage media are shaped as disk types too. The holographic data storage system also uses a disk type photopolymer media. And then, holographic data storage system is most advanced optical memory system. Tracking servo and tilt servo control are very important research in holographic data storage system. In this paper, we propose intelligent servo control by fuzzy rules in holographic data storage system. Hence, we have found pattern of tilt servo control in holographic data storage system through fuzzy system. Fuzzy rules were generated by Genetic algorithm for controlling tilt servo. Therefore, we control tilt servo using fuzzy rules in holographic data storage system. Consequently, practical pattern of tilt servo control was found by intelligence algorithm in holographic data storage system.[1]

Atomic Force High Frequency Phonons Non-volatile Dynamic Random-Access Memory Compatible with Sub-7nm ULSI CMOS Technology

MRS Advances ◽  
2019 ◽  
Vol 4 (48) ◽  
pp. 2577-2584
Author(s):  
James N. Pan
Keyword(s):  
Quantum Wells ◽  
High Frequency ◽  
Nonvolatile Memory ◽  
High Speed ◽  
Random Access ◽  
Cost Effective ◽  
Cmos Technology ◽  
Access Time ◽  
Cmos Process ◽  
Atomic Force

ABSTRACTThis paper reports a novel low power, fast nonvolatile memory utilizing high frequency phonons, atomic force dual quantum wells, ferromagnetism, coupled magnetic dipoles and random accessed magnetic devices. Very high-speed memories, such as SRAM and DRAM, are mostly volatile (data are lost when power is off). Nonvolatile memories, including FLASH and MRAM, are typically not as fast has DRAM or SRAM, and the voltages for WRITE/ERASE operations are relatively high. This paper describes a silicon nonvolatile memory that is compatible with advanced sub-7nm CMOS process. It consists of only one transistor (MOSFET) – small size, and more cost effective, compared with a 6-Transistor SRAM. There is no need to refresh, as required by DRAM. The access time can be less than 1ns – close to the speed level of relaxation time - much faster than traditional FLASH memories and comparable to volatile DRAM. The operating voltages for all memory functions can be as low as high speed CMOS.

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