Dopant Induced Impurity Bands and Carrier Concentration Control for Thermoelectric Enhancement in p-Type Cr2Ge2Te6
2017 ◽
Vol 29
(17)
◽
pp. 7401-7407
◽
Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1228-1231
2018 ◽
Vol 31
(3)
◽
pp. 20
2019 ◽
Vol 7
(3)
◽
pp. 1045-1054
◽
2018 ◽
Vol 88
◽
pp. 239-249
◽
Keyword(s):
2012 ◽
Vol 36
(1)
◽
pp. 97-107
◽
2019 ◽
Vol 48
(4)
◽
pp. 2085-2094
◽
2013 ◽
Vol 2013
◽
pp. 1-4
◽