Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction

2015 ◽  
Vol 7 (28) ◽  
pp. 15206-15213 ◽  
Author(s):  
PhaniKiran Vabbina ◽  
Nitin Choudhary ◽  
Al-Amin. Chowdhury ◽  
Raju Sinha ◽  
Mustafa Karabiyik ◽  
...  
1999 ◽  
Vol 607 ◽  
Author(s):  
B. Aslan ◽  
R. Turan ◽  
O. Nur ◽  
M. Karlsteen ◽  
M. Willander

AbstractA Schottky type infrared detector fabricated on a p-type Si1−xGex substrate has a higher cut-off wavelength than one on a pure Si substrate because the barrier height of the Schottky junction on p-type Si1−xGex decreases with the Ge content and the induced strain in the Si1−xGex layer. We have studied the effect of the strain relaxation on the internal photoemission and I-V characteristics of a Pt/Si1−xGex Schottky junction with x=0.14. It is shown that the cut-off wavelength of the diode made on a strained Si0.86Ge0.14 layer is higher than that on a Si substrate as expected. This shows the possibility of tuning the range of these detectors in the mid-infrared region. However, the thermal relaxation in the Si0.86Ge0.14 layer is found to reduce the cut-off wavelength to lower values, showing that the difference between the Fermi level of the metal and the valence band edge increases with the layer relaxation. This effect should be taken into account when a Schottky type infrared detector is manufactured on a strained Si1−xGex film. I-V characteristics of the junctions also indicate an increase of the barrier height with the relaxation of Si1−xGex. These results demonstrate the band edge movements in a Si ixGex layer experimentally agree with the expected changes in the band structure of the Si1−xGex layer with strain relaxation.


2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.


2009 ◽  
Vol 53 (4) ◽  
pp. 1305-1313 ◽  
Author(s):  
María P. Sánchez-Cañete ◽  
Luís Carvalho ◽  
F. Javier Pérez-Victoria ◽  
Francisco Gamarro ◽  
Santiago Castanys

ABSTRACT Miltefosine (hexadecylphosphocholine, MLF) is the first oral drug with recognized efficacy against both visceral and cutaneous leishmaniasis. However, some clinical studies have suggested that MLF shows significantly less efficiency against the cutaneous leishmaniasis caused by Leishmania braziliensis. In this work, we have determined the cellular and molecular basis for the natural MLF resistance observed in L. braziliensis. Four independent L. braziliensis clinical isolates showed a marked decrease in MLF sensitivity that was due to their inability to internalize the drug. MLF internalization in the highly sensitive L. donovani species requires at least two proteins in the plasma membrane, LdMT, a P-type ATPase involved in phospholipid translocation, and its β subunit, LdRos3. Strikingly, L. braziliensis parasites showed highly reduced levels of this MLF translocation machinery at the plasma membrane, mainly because of the low expression levels of the β subunit, LbRos3. Overexpression of LbRos3 induces increased MLF sensitivity not only in L. braziliensis promastigotes but also in intracellular amastigotes. These results further highlight the importance of the MLF translocation machinery in determining MLF potency and point toward the development of protocols to routinely monitor MLF susceptibility in geographic areas where L. braziliensis might be prevalent.


RSC Advances ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 3009-3013 ◽  
Author(s):  
Tuan-Khoa Nguyen ◽  
Hoang-Phuong Phan ◽  
Jisheng Han ◽  
Toan Dinh ◽  
Abu Riduan Md Foisal ◽  
...  

This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices.


2019 ◽  
Vol 288 ◽  
pp. 625-633 ◽  
Author(s):  
Hwan-Seok Jeong ◽  
Min-Jae Park ◽  
Soo-Hun Kwon ◽  
Hyo-Jun Joo ◽  
Hyuck-In Kwon

2021 ◽  
Vol 12 (2) ◽  
pp. 2138-2151

Ba0.5Sr0.5TiO3 (BST) film doped with RuO2 with varying concentrations (0%, 2%, 4%, and 6%) on a p-type (100) silicon substrate has been successfully grown using the Chemical Solution Deposition (CSD) method and spin coating at a rotational speed of 3000 rpm for 30 seconds. The film on the substrate was then heated at 850 oC for 15 hours. BST film+RuO2 variations were characterized for their sensitivity as a light sensor. BST film+RuO2 variations were tested with a varied light source and reflective surface colors. Thin films have a range at the visible light wavelength, so LED lights were used as the light source in the present study. The light source selected was the blue LED because it had a high contrast in differentiating between dark and light-colored surfaces. Various electronic circuits assisted sensitivity characterization with the aim to produce a sensor that is highly sensitive to light. The response of BST film+ RuO2 variations differed according to the RuO2 doping concentration. BST film doped with RuO2 6% had a very good response to changes in light, so this film was applied as the line detector sensor in the line follower-based rice-stalk cutter model with an HC-05 Bluetooth control. Before being integrated with the microcontroller, the output voltage of the BST film was strengthened using an op-amp circuit so that the microcontroller could read the output voltage of the BST film.


2019 ◽  
Vol 30 (43) ◽  
pp. 435502 ◽  
Author(s):  
Eliana M F Vieira ◽  
J P B Silva ◽  
Kateřina Veltruská ◽  
V Matolín ◽  
A L Pires ◽  
...  

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