Synthesizing a Healable Stretchable Transparent Conductor

2015 ◽  
Vol 7 (25) ◽  
pp. 14140-14149 ◽  
Author(s):  
Junpeng Li ◽  
Shuhua Qi ◽  
Jiajie Liang ◽  
Lu Li ◽  
Yan Xiong ◽  
...  
2008 ◽  
Author(s):  
Yasushi Hirose ◽  
Naoomi Yamada ◽  
Shoichiro Nakao ◽  
Taro Hitosugi ◽  
Toshihiro Shimada ◽  
...  

2017 ◽  
Author(s):  
Lyudmyla Adamska ◽  
Sridhar Sadasivam ◽  
Jonathan J. Foley ◽  
Pierre Darancet ◽  
Sahar Sharifzadeh

Two-dimensional boron is promising as a tunable monolayer metal for nano-optoelectronics. We study the optoelectronic properties of two likely allotropes of two-dimensional boron using first-principles density functional theory and many-body perturbation theory. We find that both systems are anisotropic metals, with strong energy- and thickness-dependent optical transparency and a weak (<1%) absorbance in the visible range. Additionally, using state-of-the-art methods for the description of the electron-phonon and electron-electron interactions, we show that the electrical conductivity is limited by electron-phonon interactions. Our results indicate that both structures are suitable as a transparent electrode.


2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>


2021 ◽  
Author(s):  
Jia-Wei Chen ◽  
Shaobo Yang ◽  
Chia-Hao Li ◽  
Yang-Yi Huang ◽  
Chen-Hua Chen ◽  
...  

Abstract The variation behaviors of the morphology, transmission, and sheet resistance of the surface Ag/AgO nano-network (NNW) structures fabricated under different illumination conditions and with different Ag deposition thicknesses and thermal annealing temperatures in forming initial Ag nanoparticles (NPs) are studied. Generally, an NNW structure with a smaller mesh size or a denser branch distribution has a lower transmission and a lower sheet resistance level. Under the fabrication condition of a broader illumination spectrum, a lower thermal annealing temperature, or a thicker Ag deposition, we can obtain an NNW structure of a smaller mesh size. The mesh size of an NNW structure is basically controlled by the seed density of Brownian tree (BT) at the beginning of light illumination. A BT-seed can be formed through a stronger local localized surface plasmon resonance for accelerating Ag oxidation in a certain region. Once an Ag/AgO BT-seed is formed, the surrounding Ag NPs are reorganized to form the branches of a BT. Multiple BTs are connected to form a large-area NNW structure, which can serve as a transparent conductor. Under the fabrication conditions of a broader illumination spectrum, 3-nm Ag deposition, and 100-degree-C thermal annealing, we can implement an NNW structure to achieve ~1.15 micron in mesh size, ~90 Ohm/sq in sheet resistance, and 93-77 % in transmittance within the wavelength range between 370 and 700 nm.


Author(s):  
Tilman Beierlein ◽  
S. Strite ◽  
A. Dommann ◽  
D. J. Smith

We have investigated the properties of InGaN grown at low temperature on glass substrates by a plasma enhanced MBE process. The goal of this study was to evaluate the potential of InGaN as an oxide-free, transparent conductor material which could be deposited at or slightly above room temperature with minimal interaction or damage to the underlying material. InxGa1−xN films deposited on glass, even without substrate heating, are highly crystalline, but the crystallinity as measured by x-ray degrades at x < 0.5. The microstructure observed by TEM of InGaN films deposited on unheated substrates is highly columnar, with typical column widths of ~10 nm. The optical absorption spectra of InGaN/glass have a distinct absorption edge at the bandgap, but also high background absorption in the bandgap. InxGa1−xN grown on glass (x > 0.5) is conductive due to its high electron concentration. InN electron Hall mobilities > 20 cm2/Vs when grown at 400°C, and ~ 7 cm2/Vs on unheated substrates were obtained. The addition of GaN degraded the electrical properties of the films to a greater extent than it improved the transparency. As a result, the best transparent conductor films were pure InN which, when deposited at 400°C, were half as transparent in the green as an indium tin oxide film having the same sheet resistance.


Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2511 ◽  
Author(s):  
Wooseop Shin ◽  
Jaemook Lim ◽  
Younggeun Lee ◽  
Sewoong Park ◽  
Hyeonseok Kim ◽  
...  

Selective laser sintering of metal nanoparticle ink is an attractive technology for the creation of metal layers at the microscale without any vacuum deposition process, yet its application to elastomer substrates has remained a highly challenging task. To address this issue, we introduced the shear-assisted laser transfer of metal nanoparticle ink by utilizing the difference in thermal expansion coefficients between the elastomer and the target metal electrode. The laser was focused and scanned across the absorbing metal nanoparticle ink layer that was in conformal contact with the elastomer with a high thermal expansion coefficient. The resultant shear stress at the interface assists the selective transfer of the sintered metal nanoparticle layer. We expect that the proposed method can be a competent fabrication route for a transparent conductor on elastomer substrates.


2010 ◽  
Vol 49 (8) ◽  
pp. 080215 ◽  
Author(s):  
Housei Akazawa

Sign in / Sign up

Export Citation Format

Share Document