Thermal Isotropic Exchange between Ethyl Iodide and Molecular Iodine in the Liquid Phase

1957 ◽  
Vol 61 (1) ◽  
pp. 111-112 ◽  
Author(s):  
L. R. Darbee ◽  
G. M. Morris
Keyword(s):  
Liquid Phase ◽  
Molecular Iodine ◽  
Ethyl Iodide ◽  
Isotropic Exchange

Radiolysis of Ethyl Iodide in the Liquid Phase

1963 ◽  
Vol 2 (2) ◽  
Author(s):  
Ralph N. Schindler
Keyword(s):  
Steady State ◽  
Liquid Phase ◽  
Ethyl Iodide ◽  
Minor Importance ◽  
Ethylene Formation ◽  
Upper Limit ◽  
Diffusion Controlled ◽  
Ethane Formation

SummaryTheEthane formation in pure irradiated ethyl iodide occurs to only 50% by reactions under steady state conditions. The residual ethane results from diffusion controlled reactions in spurs. "Hot" processes are found to be of minor importance. Ethylene and butane production occurs in the spurs exclusively. The upper limit for ethylene formation via unimolecular elimination is estimated to G < 0.9.

Elucidation of block boundaries as the dissolution channels in hydrated cement

1978 ◽  
Vol 36 (1) ◽  
pp. 484-485
Author(s):  
N.V. Belov ◽  
U.I. Papiashwili ◽  
B.E. Yudovich
Keyword(s):  
Liquid Phase ◽  
Grain Boundaries ◽  
Benzoyl Peroxide ◽  
Phase Contrast ◽  
Active Role ◽  
Point Of View ◽  
Hardened Cement ◽  
Hydrated Cement ◽  
Hardened Cement Paste

It has been almost universally adopted that dissolution of solids proceeds with development of uniform, continuous frontiers of reaction.However this point of view is doubtful / 1 /. E.g. we have proved the active role of the block (grain) boundaries in the main phases of cement, these boundaries being the areas of hydrate phases' nucleation / 2 /. It has brought to the supposition that the dissolution frontier of cement particles in water is discrete. It seems also probable that the dissolution proceeds through the channels, which serve both for the liquid phase movement and for the drainage of the incongruant solution products. These channels can be appeared along the block boundaries.In order to demonsrate it, we have offered the method of phase-contrast impregnation of the hardened cement paste with the solution of methyl metacrylahe and benzoyl peroxide. The viscosity of this solution is equal to that of water.

Identification of hepatitis a virus in cell cultures by solid phase immune electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 238-239
Author(s):  
C.D. Humphrey ◽  
T.L. Cromeans ◽  
E.H. Cook ◽  
D.W. Bradley
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Cell Cultures ◽  
Rapid Detection ◽  
Hepatitis A ◽  
Hepatitis A Virus ◽  
Solid Phase ◽  
Immune Electron Microscopy ◽  
Detection And Identification

There is a variety of methods available for the rapid detection and identification of viruses by electron microscopy as described in several reviews. The predominant techniques are classified as direct electron microscopy (DEM), immune electron microscopy (IEM), liquid phase immune electron microscopy (LPIEM) and solid phase immune electron microscopy (SPIEM). Each technique has inherent strengths and weaknesses. However, in recent years, the most progress for identifying viruses has been realized by the utilization of SPIEM.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Effect of furnace atmosphere and silica content on the consolidation behaviour of magnesia partially stabilised zirconia

1990 ◽  
Vol 48 (4) ◽  
pp. 1056-1057
Author(s):  
J. Drennan ◽  
R.H.J. Hannink ◽  
D.R. Clarke ◽  
T.M. Shaw
Keyword(s):  
Liquid Phase ◽  
Silica Content ◽  
Liquid Phase Sintering ◽  
Furnace Atmosphere ◽  
Boundary Phase ◽  
Analytical Electron ◽  
Analytical Electron Microscope ◽  
Series Of Experiments ◽  
Compositional Gradients ◽  
Mobile Liquid

Magnesia partially stabilised zirconia (Mg-PSZ) ceramics are renowned for their excellent nechanical properties. These are effected by processing conditions and purity of starting materials. It has been previously shown that small additions of strontia (SrO) have the effect of removing the major contaminant, silica (SiO2).The mechanism by which this occurs is not fully understood but the strontia appears to form a very mobile liquid phase at the grain boundaries. As the sintering reaches the final stages the liquid phase is expelled to the surface of the ceramic. A series of experiments, to examine the behaviour of the liquid grain boundary phase, were designed to produce compositional gradients across the ceramic bodies. To achieve this, changes in both silica content and furnace atmosphere were implemented. Analytical electron microscope techniques were used to monitor the form and composition of the phases developed. This paper describes the results of our investigation and the presentation will discuss the work with reference to liquid phase sintering of ceramics in general.

Microstructure and microanalysis of sintered Fe-Nd-B permanent magnets

1990 ◽  
Vol 48 (4) ◽  
pp. 990-991
Author(s):  
Mahesh Chandramouli
Keyword(s):  
Electron Microscope ◽  
Liquid Phase ◽  
Permanent Magnets ◽  
Phase Distribution ◽  
Energy Dispersive Spectrometer ◽  
Nucleation And Growth ◽  
Liquid Phase Sintering ◽  
Domain Wall Energy ◽  
Oxide Phases ◽  
Scanning Electron

Magnetization reversal in sintered Fe-Nd-B, a complex, multiphase material, occurs by nucleation and growth of reverse domains making the isolation of the ferromagnetic Fe14Nd2B grains by other nonmagnetic phases crucial. The magnets used in this study were slightly rich in Nd (in comparison to Fe14Nd2B) to promote the formation of Nd-oxides at multigrain junctions and incorporated Dy80Al20 as a liquid phase sintering addition. Dy has been shown to increase the domain wall energy thus making nucleation more difficult while Al is thought to improve the wettability of the Nd-oxide phases.Bulk polished samples were examined in a JEOL 35CF scanning electron microscope (SEM) operated at 30keV equipped with a Be window energy dispersive spectrometer (EDS) detector in order to determine the phase distribution.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Peculiarities of solid-liquid-phase transition in CdTe

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 1057-1060
Author(s):  
L Shcherbak
Keyword(s):  
Phase Transition ◽  
Liquid Phase ◽  
Liquid Phase Transition ◽  
Solid Liquid

Vapour phase and liquid phase doping of ZnSe by group III elements

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 470-474
Author(s):  
U Aminov
Keyword(s):  
Liquid Phase ◽  
Vapour Phase ◽  
Group Iii
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