Low Voltage, Hysteresis Free, and High Mobility Transistors from All-Inorganic Colloidal Nanocrystals

Nano Letters ◽  
2012 ◽  
Vol 12 (4) ◽  
pp. 1813-1820 ◽  
Author(s):  
Dae Sung Chung ◽  
Jong-Soo Lee ◽  
Jing Huang ◽  
Angshuman Nag ◽  
Sandrine Ithurria ◽  
...  
Keyword(s):  
Low Voltage ◽  
High Mobility ◽  
Colloidal Nanocrystals ◽  
Voltage Hysteresis

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

scholarly journals High-mobility low-temperature ZnO transistors with low-voltage operation

2010 ◽  
Vol 96 (19) ◽  
pp. 192115 ◽  
Author(s):  
Hyojin Bong ◽  
Wi Hyoung Lee ◽  
Dong Yun Lee ◽  
Beom Joon Kim ◽  
Jeong Ho Cho ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Voltage ◽  
High Mobility ◽  
Low Voltage Operation

Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators

1999 ◽  
Vol 11 (16) ◽  
pp. 1372-1375 ◽  
Author(s):  
C. D. Dimitrakopoulos ◽  
I. Kymissis ◽  
S. Purushothaman ◽  
D. A. Neumayer ◽  
P. R. Duncombe ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Voltage ◽  
High Mobility ◽  
Solution Processed ◽  
High Dielectric

TEM Study of Nanocrystalline AgxNi1-x Solid Solutions

1997 ◽  
Vol 3 (S2) ◽  
pp. 427-428
Author(s):  
W. A. Chiou ◽  
C. Y. Tong ◽  
H. M. Lin
Keyword(s):  
Nanocrystalline Materials ◽  
Low Voltage ◽  
High Mobility ◽  
High Energy ◽  
Fiber Composites ◽  
Intermetallic Alloys ◽  
Electrical Circuits ◽  
New Class ◽  
Quenching Method ◽  
Vapor Quenching

Research on nanocrystalline materials, a new class of materials with a grain size of less than 20-30 nm in diameter, has flourished in the last decade because of their unique properties and Characteristics. While enormous amounts of nanocrystalline intermetallic alloys have been made by high energy mechanical alloying, little of this research has been carried out to study the formation of alloys of very low solid solubility elements such as Ag and Ni (0.1 at % at 750 °C).Upon quenching atoms in a state of high mobility, they can be “frozen” into unconventional random positions and thermodynamically metastable or unstable phases can be formed. This research was thus undertaken to synthesize nanocrystalline AgxNi1-x solid solution because fiber composites of this system have been widely used in low-voltage electrical circuits. This paper presents a TEM/AEM investigation of the traditionally immiscible nanocrystalline AgxNi1-xsolids formed by gas evaporation - vapor quenching method.

scholarly journals The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1903 ◽  
Author(s):  
Hanyuan Zhang ◽  
Shu Yang ◽  
Kuang Sheng
Keyword(s):  
Leakage Current ◽  
Low Voltage ◽  
High Mobility ◽  
Packaging Materials ◽  
Mechanism Analysis ◽  
Key Factors ◽  
Liquid Environment ◽  
Sensing Applications ◽  
Dimensional Electron Gas ◽  
Reliability Issue

Wide bandgap gallium nitride (GaN)-based devices have attracted a lot of attention in optoelectronics, power electronics, and sensing applications. AlGaN/GaN based sensors, featuring high-density and high-mobility two-dimensional electron gas (2DEG), have been demonstrated to be effective chemical sensors and biosensors in the liquid environment. One of the key factors limiting the wide adoption of the AlGaN/GaN liquid sensor is the package reliability issue. In this paper, the reliability of three types of sensor packaging materials (SiO2/Si3N4, PI, and SiO2/Si3N4/PI) on top of 5-μm metal are tested in Phosphate buffer saline (PBS) solution. By analyzing the I-V characteristics, it is found that the leakage currents within different regimes follow distinct leakage models, whereby the key factors limiting the leakage current are identified. Moreover, the physical mechanisms of the package failure are illustrated. The failure of the SiO2/Si3N4 package is due to its porous structure such that ions in the solution can penetrate into the packaging material and reduce its resistivity. The failure of the PI package at a relatively low voltage (<3 V) is mainly due to the poor adhesion of PI to the AlGaN surface such that the solution can reach the electrode by the “lateral drilling” effect. The SiO2/Si3N4/PI package achieves less than 10 μA leakage current at 5 V voltage stress because it combines the advantages of the SiO2/Si3N4 and the PI packages. The analysis in this work can provide guidelines for the design and failure mechanism analysis of packaging materials.

Well-Defined Dual Mn-Sites based Metal-Organic Framework to Promote CO2 Reduction / Evolution in Li-CO2 Batteries

2021 ◽  
Author(s):  
Ya-Qian Lan ◽  
Long-zhang Dong ◽  
Yu Zhang ◽  
Yun-Feng Lu ◽  
Lei Zhang ◽  
...  
Keyword(s):  
Cathode Materials ◽  
Low Voltage ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Co2 Reduction ◽  
Metal Organic ◽  
Voltage Hysteresis ◽  
Dual Metal ◽  
Organic Framework

A series of Li-CO2 battery cathode materials are reported based on metal-organic frameworks with dual-metal sites containing metalloporphyrin and metal-coordinated pyrazole. The MnTPzP-Mn demonstrates a low voltage hysteresis of 1.05...

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