scholarly journals Extension of the Coherence Time by Generating MW Dressed States in a Single NV Centre in Diamond

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
H. Morishita ◽  
T. Tashima ◽  
D. Mima ◽  
H. Kato ◽  
T. Makino ◽  
...  
Keyword(s):  
Coherence Time ◽  
Nitrogen Vacancy ◽  
Sensing Applications ◽  
Dressed States ◽  
Major Interest ◽  
Quantum Sensing ◽  
Order Of Magnitude

Abstract Nitrogen-vacancy (NV) centres in diamond hold promise in quantum sensing applications. A major interest in them is an enhancement of their sensitivity by the extension of the coherence time (T2). In this report, we experimentally generated more than four dressed states in a single NV centre in diamond based on Autler-Townes splitting (ATS). We also observed the extension of the coherence time to T2 ~ 1.5 ms which is more than two orders of magnitude longer than that of the undressed states. As an example of a quantum application using these results we propose a protocol of quantum sensing, which shows more than an order of magnitude enhancement in the sensitivity.

scholarly journals Nuclear spin assisted magnetic field angle sensing

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Ziwei Qiu ◽  
Uri Vool ◽  
Assaf Hamo ◽  
Amir Yacoby
Keyword(s):  
Magnetic Field ◽  
Nuclear Spin ◽  
Coherence Time ◽  
Nitrogen Vacancy ◽  
Sensing Applications ◽  
Field Sensitivity ◽  
Underlying Principle ◽  
Quantum Sensing ◽  
External Signals ◽  
The Magnetic Field

AbstractQuantum sensing exploits the strong sensitivity of quantum systems to measure small external signals. The nitrogen-vacancy (NV) center in diamond is one of the most promising platforms for real-world quantum sensing applications, predominantly used as a magnetometer. However, its magnetic field sensitivity vanishes when a bias magnetic field acts perpendicular to the NV axis. Here, we introduce a different sensing strategy assisted by the nitrogen nuclear spin that uses the entanglement between the electron and nuclear spins to restore the magnetic field sensitivity. This, in turn, allows us to detect small changes in the magnetic field angle relative to the NV axis. Furthermore, based on the same underlying principle, we show that the NV coupling strength to magnetic noise, and hence its coherence time, exhibits a strong asymmetric angle dependence. This allows us to uncover the directional properties of the local magnetic environment and to realize maximal decoupling from anisotropic noise.

scholarly journals Sensing Electrochemical Signals Using a Nitrogen-Vacancy Center in Diamond

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 358
Author(s):  
Hossein T. Dinani ◽  
Enrique Muñoz ◽  
Jeronimo R. Maze
Keyword(s):  
Electric Field ◽  
Electron Spin ◽  
Electrolyte Solution ◽  
High Sensitivity ◽  
Theoretical Work ◽  
Coherence Time ◽  
Nitrogen Vacancy ◽  
Local Concentration ◽  
Concentration Of Ions ◽  
Nv Center

Chemical sensors with high sensitivity that can be used under extreme conditions and can be miniaturized are of high interest in science and industry. The nitrogen-vacancy (NV) center in diamond is an ideal candidate as a nanosensor due to the long coherence time of its electron spin and its optical accessibility. In this theoretical work, we propose the use of an NV center to detect electrochemical signals emerging from an electrolyte solution, thus obtaining a concentration sensor. For this purpose, we propose the use of the inhomogeneous dephasing rate of the electron spin of the NV center (1/T2★) as a signal. We show that for a range of mean ionic concentrations in the bulk of the electrolyte solution, the electric field fluctuations produced by the diffusional fluctuations in the local concentration of ions result in dephasing rates that can be inferred from free induction decay measurements. Moreover, we show that for a range of concentrations, the electric field generated at the position of the NV center can be used to estimate the concentration of ions.

scholarly journals Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Michal Gulka ◽  
Daniel Wirtitsch ◽  
Viktor Ivády ◽  
Jelle Vodnik ◽  
Jaroslav Hruby ◽  
...  
Keyword(s):  
Dipolar Interaction ◽  
Coherence Time ◽  
Wide Bandgap ◽  
Nitrogen Vacancy ◽  
Ambient Conditions ◽  
Nuclear Spins ◽  
Quantum Device ◽  
Nanoscale Electronics ◽  
Quantum Processor ◽  
Processor Unit

AbstractNuclear spins in semiconductors are leading candidates for future quantum technologies, including quantum computation, communication, and sensing. Nuclear spins in diamond are particularly attractive due to their long coherence time. With the nitrogen-vacancy (NV) centre, such nuclear qubits benefit from an auxiliary electronic qubit, which, at cryogenic temperatures, enables probabilistic entanglement mediated optically by photonic links. Here, we demonstrate a concept of a microelectronic quantum device at ambient conditions using diamond as wide bandgap semiconductor. The basic quantum processor unit – a single 14N nuclear spin coupled to the NV electron – is read photoelectrically and thus operates in a manner compatible with nanoscale electronics. The underlying theory provides the key ingredients for photoelectric quantum gate operations and readout of nuclear qubit registers. This demonstration is, therefore, a step towards diamond quantum devices with a readout area limited by inter-electrode distance rather than by the diffraction limit. Such scalability could enable the development of electronic quantum processors based on the dipolar interaction of spin-qubits placed at nanoscopic proximity.

scholarly journals Terahertz quantum sensing

2020 ◽  
Vol 6 (11) ◽  
pp. eaaz8065 ◽  
Author(s):  
Mirco Kutas ◽  
Björn Haase ◽  
Patricia Bickert ◽  
Felix Riexinger ◽  
Daniel Molter ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Region Of Interest ◽  
Coherent Detection ◽  
Semiconductor Detectors ◽  
Terahertz Frequency ◽  
Sensing Applications ◽  
Highly Sensitive ◽  
Quantum Sensing ◽  
Thickness Measurements ◽  
Detection Schemes

Quantum sensing is highly attractive for accessing spectral regions in which the detection of photons is technically challenging: Sample information is gained in the spectral region of interest and transferred via biphoton correlations into another spectral range, for which highly sensitive detectors are available. This is especially beneficial for terahertz radiation, where no semiconductor detectors are available and coherent detection schemes or cryogenically cooled bolometers have to be used. Here, we report on the first demonstration of quantum sensing in the terahertz frequency range in which the terahertz photons interact with a sample in free space and information about the sample thickness is obtained by the detection of visible photons. As a first demonstration, we show layer thickness measurements with terahertz photons based on biphoton interference. As nondestructive layer thickness measurements are of high industrial relevance, our experiments might be seen as a first step toward industrial quantum sensing applications.

Teleportation of a controlled-NOT gate for photon and electron-spin qubits assisted by the nitrogen-vacancy center

2015 ◽  
Vol 15 (15&16) ◽  
pp. 1397-1419
Author(s):  
Ming-Xing Luo ◽  
Hui-Ran Li
Keyword(s):  
Electron Spin ◽  
Spin System ◽  
Room Temperature ◽  
Coherence Time ◽  
Nitrogen Vacancy ◽  
Cnot Gate ◽  
Long Distance ◽  
Two Photon ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

Teleportations of quantum gates are very important in the construction of quantum network and teleportation-based model of quantum computation. Assisted with nitrogenvacancy centers, we propose several schemes to teleport the quantum CNOT gate. Deterministic CNOT gate may be implemented on a remote two-photon system, remote two electron-spin system, hybrid photon-spin system or hybrid spin-photon system. Each photon only interacts with one spin each time. Moreover, quantum channel may be constructed by all combinations of the photon or electron-spin entanglement, or their hybrid entanglement. Since these electron-spin systems have experimentally shown a long coherence time even at the room temperature, our schemes provide useful ways for long-distance quantum applications.

Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films

2021 ◽  
Author(s):  
SRINIVASU KUNUKU ◽  
Mateusz Ficek ◽  
Aleksandra Wieloszynska ◽  
Magdalena Daniela Tamulewicz-Szwajkowska ◽  
Krzysztof Gajewski ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Microwave Plasma ◽  
Synthesis Method ◽  
Cvd Diamond ◽  
Nitrogen Vacancy ◽  
Electrochemical Sensing ◽  
Co Doping ◽  
Sensing Applications ◽  
B Doping ◽  
Resistance Value

Abstract Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ~ 0.02 with three different B/C doping concentrations of B/C ~ 2500 ppm, 5000 ppm, 7500 ppm. AFM topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74 eV to 4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ~ 7500 ppm) have shown the low resistance value ~ 9.29 Ω for CVD diamond/SCD IIa, and the resistance value ~ 16.55 Ω for CVD diamond/SCD Ib samples.

scholarly journals Tripod-Loop Metasurfaces for Terahertz-Sensing Applications: A Comparison

2020 ◽  
Vol 10 (18) ◽  
pp. 6504
Author(s):  
Irati Jáuregui-López ◽  
Bakhtiyar Orazbayev ◽  
Victor Pacheco-Peña ◽  
Miguel Beruete
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Field Intensity ◽  
Electric Field Intensity ◽  
Ring Resonators ◽  
Film Sensor ◽  
Average Value ◽  
Sensing Applications ◽  
Order Of Magnitude ◽  
Hole Arrays

The high electric field intensity achieved on the surface of sensors based on metasurfaces (metasensors) makes them an excellent alternative for sensing applications where the volume of the sample to be identified is tiny (for instance, thin-film sensing devices). Various shapes and geometries have been proposed recently for the design of these metasensors unit-cells (meta-atoms) such as split ring resonators or hole arrays, among others. In this paper, we propose, design, and evaluate two types of tripod metasurfaces with different complexity in their geometry. An in-depth comparison of their performance is presented when using them as thin-film sensor devices. The meta-atoms of the proposed metasensors consist of a simple tripod and a hollow tripod structure. From numerical calculations, it is shown that the best geometry to perform thin-film sensing is the compact hollow tripod (due to the highest electric field on its surface) with a mean sensitivity of 3.72 × 10−5 nm−1. Different modifications are made to this structure to improve this value, such as introducing arms in the design and rotating the metallic pattern 30 degrees. The best sensitivity achieved for extremely thin film analytes (5–25 nm thick) has an average value of 1.42 × 10−4 nm, which translates into an extremely high improvement of 381% with respect to the initial hollow tripod structure. Finally, a comparison with other designs found in the literature shows that our design is at the top of the ranking, improving the overall performance by more than one order of magnitude. These results highlight the importance of using metastructures with more complex geometries so that a higher electric field intensity distribution and, therefore, designs with better performance can be obtained.

scholarly journals Ultrashort Long-Period Fiber Gratings Inscribed on a Single-Mode Fiber for Torsion Sensing Applications

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Marta Nespereira ◽  
João M. P. Coelho ◽  
José Manuel Rebordão
Keyword(s):  
Single Mode ◽  
Single Mode Fiber ◽  
Wavelength Shift ◽  
Fiber Grating ◽  
Long Period ◽  
Sensing Applications ◽  
High Tension ◽  
Long Period Fiber Gratings ◽  
Order Of Magnitude ◽  
Period Fiber Grating

The response of ultrashort-length CO2-induced long-period fiber grating (LPFG) sensors to torsion is reported. While engraving using CO2 laser radiation, the fiber is submitted to high tension allowing the obtainment of gratings with shorter lengths, down to 2.4 mm, which is almost one order of magnitude lower than the usual. Also, the fiber is only irradiated in one side, creating an asymmetrical profile leading to highly birefringent gratings. Sensitivity to axial twists is demonstrated, with values up to 0.15 nm/(rad/m) for the resonant wavelength shift and higher than 0.03 dBm/(rad/m) for the variation in the intensity (attenuation). Discrimination between rotation directions, clockwise and counterclockwise, was observed.

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