scholarly journals Surface modification of multilayer FePS3 by Ga ion irradiation

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Heng Xu ◽  
ShangWu Wang ◽  
JianMing Ouyang ◽  
Xin He ◽  
Hao Chen ◽  
...  
Keyword(s):  
Raman Spectrum ◽  
Intensity Ratio ◽  
Surface Engineering ◽  
Ion Irradiation ◽  
Irradiation Time ◽  
Ion Beam ◽  
Two Dimensional ◽  
Ion Beam Irradiation ◽  
Peak Intensity Ratio ◽  
Modification Of The Surface

Abstract In order to investigate the modification of the surface structure of FePS3 via Ga+ ion irradiation, we study the effect of thickness and Raman spectrum of multilayer FePS3 irradiated for 0 μs, 30 μs, and 40 μs, respectively. The results demonstrate that the intensity ratio of characteristic Raman peaks are obviously related to the thickness of FePS3. After Ga+ ion irradiation, the FePS3 sample gradually became thinner and the Eu peak and Eg(v11) peak in the Raman spectrum disappeared and the peak intensity ratio of A1g(v2) with respect to A1g(v1) weakened. This trend becomes more apparent while increasing irradiation time. The phenomenon is attributed to the damage of bipyramid structure of [P2S6]4− units and the cleavage of the P-P bands and the P-S bands during Ga+ ion irradiation. The results are of great significance for improving the two-dimensional characteristics of FePS3 by Ga+ ion beam, including structural and optical properties, which pave the way of surface engineering to improve the performance of various two-dimensional layered materials via ion beam irradiation.

Growth of Cu-Oxide Protrusion by Ar Ion Irradiation

2007 ◽  
Vol 558-559 ◽  
pp. 1359-1362 ◽  
Author(s):  
Hiroyuki Tanaka ◽  
Shunichiro Tanaka
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Residual Oxygen ◽  
Irradiation Angle ◽  
Oxygen Atoms

Cu2O conical micron-scale protrusions have been grown on a preoxidized Cu surface by the Ar ion beam irradiation at 9 kV for 5-20 min in the low vacuum. This Ar ion irradiation is based on the ‘Transcription Method’ which has been originated by B.-S. Xu and S.-I. Tanaka in 1996 to form nanoparticles. Ar ion irradiation induced needle-like nanostructures composed of Cu2O and CuO which were randomly nucleated on Cu surface by the oxidation at 623 K for 10 min in the air. The obtained Cu2O conical protrusions have a controllable length of up to 14.6 μm with diameter in the range of 0.8 μm by changing the Ar ion irradiation angle to the surface. The mechanism of the formation of the conical protrusions is proposed that Cu atoms on the Cu surface activated and sputtered by the Ar ion irradiation diffuse on the surface of needle-like oxide as nuclei along the Ar ion track and react with residual oxygen atoms to grow the conical Cu2O protrusions.

Spontaneous formation of nanometer-scale self-organized structures in Ag-Cu alloys under irradiation

2000 ◽  
Vol 647 ◽  
Author(s):  
Raúl A. Enrique ◽  
Pascal Bellon
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Solute Concentration ◽  
Irradiation Temperature ◽  
Nanometer Scale ◽  
Beam Irradiation ◽  
X Ray Diffraction ◽  
Ion Beam Irradiation ◽  
Self Organized ◽  
The One

AbstractIon-beam irradiation can be used as a processing tool to synthesize metastable materials. A particular case is the preparation of solid solutions from immiscible alloys, which have been achieved for a whole range of systems. In this process, enhanced solute concentration is obtained through the local mixing induced by each irradiation event, which if occurring at a high enough frequency, can outweigh demixing by thermal diffusion. The resulting microstructure forms in far from equilibrium conditions, and theoretical results for these kind of driven alloys have shown that novel microstructures exhibiting self-organization can develop. To test these predictions, we prepare Ag-Cu multilayered thin films that we subject to 1 MeV Kr+-ion irradiation at temperatures ranging from room temperature to 225 °C, and characterize the specimens by x-ray diffraction, TEM and STEM. We observe two different phenomena occurring at different length scales: On the one hand, regardless of the irradiation temperature, grains grow under irradiation until reaching a size limited by film thickness (~200 nm). On the other hand, the distribution of species inside the grains is greatly affected by the irradiation temperature. At intermediate temperatures, a semi-coherent decomposition is observed at a nanometer scale. This nanometer-scale decomposition phenomenon appears as an evidence of patterning, and thus confirms on the possibility of using ion-beam irradiation as a route to synthesize nanostructured materials with novel magnetic and optical properties.

scholarly journals Fabrication of Nanopore in MoS2-Graphene vdW Heterostructure by Ion Beam Irradiation and the Mechanical Performance

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 196
Author(s):  
Xin Wu ◽  
Ruxue Yang ◽  
Xiyue Chen ◽  
Wei Liu
Keyword(s):  
Mechanical Performance ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Tensile Tests ◽  
Uniaxial Tensile ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Stacking Order ◽  
Vdw Heterostructure ◽  
Nanopore Structure

Nanopore structure presents great application potential especially in the area of biosensing. The two-dimensional (2D) vdW heterostructure nanopore shows unique features, while research around its fabrication is very limited. This paper proposes for the first time the use of ion beam irradiation for creating nanopore structure in 2D vdW graphene-MoS2 heterostructures. The formation process of the heterostructure nanopore is discussed first. Then, the influence of ion irradiation parameters (ion energy and ion dose) is illustrated, based on which the optimal irradiation parameters are derived. In particular, the effect of stacking order of the heterostructure 2D layers on the induced phenomena and optimal parameters are taken into consideration. Finally, uniaxial tensile tests are conducted by taking the effect of irradiation parameters, nanopore size and stacking order into account to demonstrate the mechanical performance of the heterostructure for use under a loading condition. The results would be meaningful for expanding the applications of heterostructure nanopore structure, and can arouse more research interest in this area.

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

Photoluminescence enhancement and high accuracy patterning of lead halide perovskite single crystals by MeV ion beam irradiation

2020 ◽  
Vol 8 (29) ◽  
pp. 9923-9930 ◽  
Author(s):  
Milan Palei ◽  
M. Motapothula ◽  
Aniruddha Ray ◽  
Ahmed L. Abdelhady ◽  
Luca Lanzano ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Irradiation ◽  
Ion Beam ◽  
High Accuracy ◽  
Enhancement Effect ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Photoluminescence Enhancement ◽  
Halide Perovskite ◽  
Lead Halide

Using MeV ion irradiation, a PL enhancement effect of MAPbBr3 single crystals is demonstrated.

scholarly journals Significance of Heavy-Ion Beam Irradiation-Induced Avermectin B1a Production by EngineeredStreptomyces avermitilis

2017 ◽  
Vol 2017 ◽  
pp. 1-13
Author(s):  
Shu-Yang Wang ◽  
Yong-Heng Bo ◽  
Xiang Zhou ◽  
Ji-Hong Chen ◽  
Wen-Jian Li ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
Streptomyces Avermitilis ◽  
Specific Productivity ◽  
Original Strain ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Heavy Ion Irradiation ◽  
Heavy Ion Beam

Heavy-ion irradiation technology has advantages over traditional methods of mutagenesis. Heavy-ion irradiation improves the mutation rate, broadens the mutation spectrum, and shortens the breeding cycle. However, few data are currently available regarding its effect onStreptomyces avermitilismorphology and productivity. In this study, the influence of heavy-ion irradiation onS. avermitiliswhen cultivated in approximately 10 L stirred-tank bioreactors was investigated. The specific productivity of the avermectin (AVM) B1a-producing mutantS. avermitilis147-G58 increased notably, from 3885 to 5446 μg/mL, approximately 1.6-fold, compared to the original strain. The mycelial morphology of the mutant fermentation processes was microscopically examined. Additionally, protein and metabolite identification was performed by using SDS-PAGE, 2- and 3-dimensional electrophoresis (2DE and 3DE). The results showed that negative regulation gene deletion of mutants led to metabolic process upregulating expression of protein and improving the productivity of an avermectin B1a. The results showed that the heavy-ion beam irradiation dose that corresponded to optimal production was well over the standard dose, at approximately 80 Gy at 220 AMeV (depending on the strain). This study provides reliable data and a feasible method for increasing AVM productivity in industrial processes.

Ion Beam Irradiation of Metal Films on SiO2

1983 ◽  
Vol 27 ◽  
Author(s):  
G. J. Clark ◽  
J. E. E. Baglin ◽  
F. M. d'Heurle ◽  
C. W. White ◽  
G. Farlow ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Processing ◽  
Metal Film ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Metal Films ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Lateral Transport ◽  
Metal Atoms

ABSTRACTIon beam irradiation of metal film/SiO2 interfaces causes reactions when the metals are those chemically capable of reducing SiO2. These reactions result in the formation of metal rich silicides in the region of the interface and an increase in the adhesion of the film to the substrate. For other nonreactive metals ion irradiation causes lateral transport of metal atoms resulting in the formation of an island structure. The results obtained by ion irradiation are compared with previous studies of high temperature thermal processing of metal films on SiO2.

Comparison of Conductivity Produced in Polymers and Carbon Films by Pyrolysis and High Energy Ion Irradiation

1983 ◽  
Vol 27 ◽  
Author(s):  
T. Venkatesan ◽  
R. C. Dynes ◽  
B. Wilkens ◽  
A. E. White ◽  
J. M. Gibson ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Carbon Film ◽  
Physical Nature ◽  
High Energy ◽  
Carbon Films ◽  
Chemical Degradation ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

ABSTRACTThe electrical properties of pyrolyzed polymers have been studied recently.1,2 It has been shown that organic, polymeric3 and non-polymeric4 films can be made conductive (ρ ~ 10−3Ωcm) by ion beam irradiation. Common to all of the films was the presence of carbon as a constituent element and both pyrolysis and ion beam irradiation3 was shown to increase the relative carbon content of the films. The ion beam irradiated organic films 3,4 exhibited a temperature dependence of their resistivity of the form ρ(T) = ρ∞e−(TЛ)*, where ρ is the ion-induced resistivity, ρ∞ and T0 are constants and T is the temperature. At very high doses of irradiation (1017cm−2Ar+@ 2MeV) the film resistivity was temperature independent. Very similar transport properties were observed in the pyrolyzed polymers1 as well, though the lowest resistivities achieved were higher than the resistivity values observed in the ion irradiated3 polymer films. In both the pyrolysis and ion-irradiation experiments the temperature dependence has been explained by a model due to Sheng and Abeles,5 which involves charge transport by hopping between conducting islands embedded in an insulating matrix. Such striking similarities between two distinctly different modes of energy deposition in the films, prompted us to compare the effects of pyrolysis and ion irradiation in different carbon containing films. We compared both a polymer (HPR-204°) and a film of electron beam evaporated carbon film. While in the former case one would observe chemical degradation as well as structural modification, by studying pure carbon films the physical nature of the processes could be clarified. We report metallic carrier densities in both films and evidence for significant structural rearrangement. We conclude that pyrolysis and ion beam irradiation have similar effects on both polymer and carbon films.

scholarly journals Ion beam irradiation mutagenesis in rye (Secale cereale L.), linseed (Linum usitatissimum L.) and faba bean (Vicia faba L.)

2018 ◽  
Vol 27 (3) ◽  
Author(s):  
Hamid Khazaei ◽  
Pirjo S.A. Mäkelä ◽  
Frederick L. Stoddard
Keyword(s):  
Faba Bean ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Growth Failure ◽  
Mutation Breeding ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Crop Species ◽  
Linum Usitatissimum L ◽  
Nitrogen Ion

Ion beam irradiation is a potential tool for inducing novel mutations in plants. We chose three crop species (rye, linseed, and faba bean) to determine the potential of nitrogen ion beam irradiation for inducing mutations. We tested ion beam irradiation with nitrogen ions at six different fluencies (5×105, 1×106, 5×106, 1×107, 5×107, and 1×108 N-ion cm-2) on dry grains. The three studied crop species had different sensitivities to the irradiation. Increased doses of ion irradiation had more effect on survival than on germination. Rye seedlings had the lowest survival rate at high doses of irradiation and significantly higher off-type plant phenotypes than the other two species. In M1 seedlings, stunted growth, failure to complete the plant life cycle and chlorophyll mutants were observed in all three species. Terminal-inflorescence mutations and sectional chimeras in faba bean were observed in the M2 generation. We conclude that ion beam irradiation is an effective tool for mutation breeding of diverse crop species when the appropriate dose is defined.

scholarly journals The Influence of Copper Substrates on Irradiation Effects of Graphene: A Molecular Dynamics Study

Materials ◽  
2019 ◽  
Vol 12 (2) ◽  
pp. 319 ◽  
Author(s):  
Shulong Wang ◽  
Qian Zhang ◽  
Kai Yin ◽  
Bo Gao ◽  
Siyu Zhang ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Copper Substrate ◽  
Damage Threshold ◽  
Irradiation Effects ◽  
Ion Beam Irradiation ◽  
Forming Process ◽  
Dynamics Simulations ◽  
Transmission And Distribution

In this paper, classical molecular dynamics simulations are conducted to study the graphene grown on copper substrates under ion beam irradiation, in which the emphasis is put on the influence copper substrate on a single graphene layer. It can be inferred that the actual transmission and distribution of kinetic energy from incident ion play important roles in irradiation-defects forming process together. The minimum value needed to generate defects in supported graphene is higher than 2.67 keV, which is almost twice the damage threshold as the suspended graphene sheet. This work indicates the presence of copper substrate increases the damage threshold of graphene. Additionally, our results provide an atomistic explanation for the graphene with copper substrate under ion irradiation, which is very important for engineering graphene.

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