Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

This paper shows a numerical polynomial approach to the topic of how bipolar junction transistors (BJT) and field effect transistors (FET) can be safe or unsafe when operating in explosive atmospheres. The most used transistors have been analyzed thermographically, working in a controlled environment, to characterize their thermal behavior. The target is to prevent the transistor from creating conditions that achieve the minimum activation energy for combustible vapors, dusts, or fibers/flyings. We have brought the transistors to their nominal values, specified by working currents and voltages, and confirmed that the effect of heat dissipation in a BJT is non-linear and much greater than in a MOSFET. We have experimentally found a thermal difference of more than 200ºC of overheating of a common BJT compared to a MOSFET with similar load in fixed polarization. We found temperatures above 300ºC in BJTs operating within their nominal ranges and conditions, when the accepted “safe” temperature is not supposed to exceed 200ºC in any case. Through a performance-based analysis focused on temperature, our research suggests that equipment with BJT technologies should not be implemented in certain areas of classified locations or explosive zones; so MOSFET technologies are preferable

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Development of astable multivibrators powered by photovoltaic cells

10.36227/techrxiv.12006048 ◽

2020 ◽

Author(s):

Antonio Telles

Keyword(s):

Field Effect ◽

Output Voltage ◽

Field Effect Transistors ◽

Photovoltaic Cells ◽

Bipolar Junction Transistors ◽

Peak Efficiency ◽

Full Wave ◽

Half Wave ◽

Astable Multivibrator ◽

Simulation Results

This article describes the simulation results of an astable multivibrator aimed to be fed by a photovoltaic cell, with the purpose of energy harvesting for electronic systems. The circuit was simulated using metal-oxide semiconductor field effect transistors (MOSFETs) and bipolar junction transistors. The use of half-wave and full-wave rectifiers for DC output voltage supply was also analyzed. The circuit reached a peak efficiency of 28 % when using MOSFETs PMDXB550UNE and half wave rectifier.

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Amplitude Range and Nonlinear Distortion in Amplifier Stages

International Journal of Electrical Engineering Education ◽

10.1177/002072098302000317 ◽

1983 ◽

Vol 20 (3) ◽

pp. 267-274 ◽

Cited By ~ 1

Author(s):

Pedro A. Martinez ◽

Tomas Pollan

Keyword(s):

Field Effect ◽

Nonlinear Distortion ◽

Field Effect Transistors ◽

Bipolar Junction Transistors ◽

General Description ◽

Point Location ◽

Output Amplitude ◽

Different Types ◽

Amplifier Stage

This paper presents a general description of the inherent transistor limitations affecting the linearity of its performance in its typical amplifying region. A unified treatment, for bipolar junction transistors and for the different types of field effect transistors, has been developed relating the Q-point location of an amplifier stage with the output amplitude and the nonlinear distortion.

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Two-Dimensional Graphene Family Material: Assembly, Biocompatibility and Sensors Applications

Sensors ◽

10.3390/s19132966 ◽

2019 ◽

Vol 19 (13) ◽

pp. 2966 ◽

Cited By ~ 7

Author(s):

Xingying Zhang ◽

Ying Wang ◽

Gaoxing Luo ◽

Malcolm Xing

Keyword(s):

Field Effect ◽

Electrochemical Sensors ◽

Field Effect Transistors ◽

Chemical Properties ◽

Two Dimensional ◽

Sensing System ◽

Thick Crystal ◽

Mechanical Sensors ◽

Graphene Family Materials ◽

And Chemical Properties

Graphene and its chemically exfoliated derivatives—GO and rGO—are the key members of graphene family materials (GFM). The atomically thick crystal structure and the large continuous π conjugate of graphene imparts it with unique electrical, mechanical, optical, thermal, and chemical properties. Although those properties of GO and rGO are compromised, they have better scalability and chemical tunability. All GFMs can be subject to noncovalent modification due to the large basal plane. Besides, they have satisfying biocompatibility. Thus, GFMs are promising materials for biological, chemical and mechanical sensors. The present review summarizes how to incorporate GFMs into different sensing system including fluorescence aptamer-based sensors, field-effect transistors (FET), and electrochemical sensors, as well as, how to covalently and/or non-covalently modify GFMs to achieve various detection purpose. Sensing mechanisms and fabrication strategies that will influence the sensitivity of different sensing system are also reviewed.

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Development of astable multivibrators powered by photovoltaic cells

10.36227/techrxiv.12006048.v1 ◽

2020 ◽

Author(s):

Antonio Telles

Keyword(s):

Field Effect ◽

Output Voltage ◽

Field Effect Transistors ◽

Photovoltaic Cells ◽

Bipolar Junction Transistors ◽

Peak Efficiency ◽

Full Wave ◽

Half Wave ◽

Astable Multivibrator ◽

Simulation Results

This article describes the simulation results of an astable multivibrator aimed to be fed by a photovoltaic cell, with the purpose of energy harvesting for electronic systems. The circuit was simulated using metal-oxide semiconductor field effect transistors (MOSFETs) and bipolar junction transistors. The use of half-wave and full-wave rectifiers for DC output voltage supply was also analyzed. The circuit reached a peak efficiency of 28 % when using MOSFETs PMDXB550UNE and half wave rectifier.

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Power Dissipation in Spintronic Devices: A General Perspective

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.18013 ◽

2007 ◽

Vol 7 (1) ◽

pp. 168-180 ◽

Cited By ~ 4

Author(s):

Supriyo Bandyopadhyay

Keyword(s):

Power Dissipation ◽

Field Effect ◽

Field Effect Transistors ◽

Electronic Devices ◽

Bipolar Junction Transistors ◽

Switching Speed ◽

Spintronic Device ◽

Spintronic Devices ◽

Single Spin ◽

Spin Switch

Champions of "spintronics" often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional 'charge based' electronic devices. Yet, not a single spintronic device exists today that can lend credence to this claim. Here, I show that no spintronic device that clones conventional electronic devices, such as field effect transistors and bipolar junction transistors, is likely to reduce power dissipation significantly. For that to happen, spin-based devices must forsake the transistor paradigm of switching states by physical movement of charges, and instead, switch states by flipping spins of stationary charges. An embodiment of this approach is the "single spin logic" idea proposed more than 10 years ago. Here, I revisit that idea and present estimates of the switching speed and power dissipation. I show that the Single Spin Switch is far superior to the Spin Field Effect Transistor (or any of its clones) in terms of power dissipation. I also introduce the notion of "matrix element engineering" which will allow one to switch devices without raising and lowering energy barriers between logic states, thereby circumventing the kTln2 limit on energy dissipation. Finally, I briefly discuss single spin implementations of classical reversible (adiabatic) logic.

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