Thermal behavior characterization for MOSFETs and BJTs in hazardous locations

2021 ◽  
Vol 37 (1) ◽  
Author(s):  
D. Cárdenas ◽  
J. Delgado
Keyword(s):  
Activation Energy ◽  
Thermal Behavior ◽  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Controlled Environment ◽  
Bipolar Junction Transistors ◽  
Non Linear ◽  
Thermal Difference ◽  
A Performance

This paper shows a numerical polynomial approach to the topic of how bipolar junction transistors (BJT) and field effect transistors (FET) can be safe or unsafe when operating in explosive atmospheres. The most used transistors have been analyzed thermographically, working in a controlled environment, to characterize their thermal behavior. The target is to prevent the transistor from creating conditions that achieve the minimum activation energy for combustible vapors, dusts, or fibers/flyings. We have brought the transistors to their nominal values, specified by working currents and voltages, and confirmed that the effect of heat dissipation in a BJT is non-linear and much greater than in a MOSFET. We have experimentally found a thermal difference of more than 200ºC of overheating of a common BJT compared to a MOSFET with similar load in fixed polarization. We found temperatures above 300ºC in BJTs operating within their nominal ranges and conditions, when the accepted “safe” temperature is not supposed to exceed 200ºC in any case. Through a performance-based analysis focused on temperature, our research suggests that equipment with BJT technologies should not be implemented in certain areas of classified locations or explosive zones; so MOSFET technologies are preferable

Elevated Temperature Operation of 4H-SiC Nanoribbon Field Effect Transistors

2015 ◽  
Vol 15 (10) ◽  
pp. 7551-7554 ◽  
Author(s):  
Min Seok Kang ◽  
Susanna Yu ◽  
Sang Mo Koo
Keyword(s):  
Elevated Temperature ◽  
Plasma Etching ◽  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Top Down ◽  
Channel Mobility ◽  
Channel Thickness ◽  
Effective Channel

We fabricated 4H-SiC nanoribbon field effect transistors (FETs) of various channel thickness (tch) of 100∼500 nm by a “top–down” approach, using a lithography and plasma etching process. We studied the dependence of the device transfer characteristics on the channel geometry. This demonstrated that fabricated SiC nanoribbon FETs with a tch of 100 nm show normally-on characteristics, and have a threshold voltage of −12 V, and a maximum transconductance value of 8.8 mS, which shows improved drain current degradation of the SiC nanoribbon FETs with tch =100 nm at elevated temperature. This can be attributed to the improved heat dissipation, enhanced channel mobility, and together with widening of effective channel thickness depletion induced.

Asymmetric organic semiconductors for high performance single crystalline field-effect transistors with low activation energy

2020 ◽  
Vol 8 (18) ◽  
pp. 6006-6012 ◽  
Author(s):  
Fei Qiu ◽  
Yicai Dong ◽  
Jie Liu ◽  
Yanan Sun ◽  
Hua Geng ◽  
...  
Keyword(s):  
Activation Energy ◽  
Organic Semiconductors ◽  
Field Effect ◽  
High Field ◽  
High Performance ◽  
Field Effect Transistors ◽  
Field Effect Mobility ◽  
Crystalline Field ◽  
Asymmetric Structures ◽  
Anthracene Derivatives

We synthesized three asymmetric anthracene derivatives, in which 2-phvA shows a high field-effect mobility of 10 cm2 V−1 s−1. This work demonstrates the potential advantages of asymmetric structures for high-performance organic semiconductors.

Low activation energy field-effect transistors fabricated by bar-assisted meniscus shearing

2021 ◽  
Vol 119 (10) ◽  
pp. 103301
Author(s):  
Michael Berteau-Rainville ◽  
Adrián Tamayo ◽  
Tim Leydecker ◽  
Atiye Pezeshki ◽  
Ingo Salzmann ◽  
...  
Keyword(s):  
Activation Energy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Field

GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES

2004 ◽  
Vol 14 (01) ◽  
pp. 175-195 ◽  
Author(s):  
SERGEY L. RUMYANTSEV ◽  
NEZIH PALA ◽  
MICHAEL. S. SHUR ◽  
MICHAEL E. LEVINSHTEIN ◽  
REMIS GASKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Activation Energies ◽  
Barrier Layers ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Local Levels

AlGaN thin films and Schottky barrier Al 0.4 Ga 0.6 N diodes exhibit generation-recombination (GR) noise with activation energies of 0.8 - 1 eV. GR noise in AlGaN / GaN Heterostructure Field Effect transistors (HFETs) corresponds to activation energies in the range from 1 - 3 meV to 1 eV. No GR noise is observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN / InGaN / GaN Double Heterostructure Field Effect Transistors (DHFETs). Local levels responsible for the GR noise in HFETs and DHFETs might be located in AlGaN barrier layers.

scholarly journals Development of astable multivibrators powered by photovoltaic cells

2020 ◽  
Author(s):  
Antonio Telles
Keyword(s):  
Field Effect ◽  
Output Voltage ◽  
Field Effect Transistors ◽  
Photovoltaic Cells ◽  
Bipolar Junction Transistors ◽  
Peak Efficiency ◽  
Full Wave ◽  
Half Wave ◽  
Astable Multivibrator ◽  
Simulation Results

This article describes the simulation results of an<br>astable multivibrator aimed to be fed by a photovoltaic<br>cell, with the purpose of energy harvesting for electronic<br>systems. The circuit was simulated using metal-oxide<br>semiconductor field effect transistors (MOSFETs) and<br>bipolar junction transistors. The use of half-wave and<br>full-wave rectifiers for DC output voltage supply was<br>also analyzed. The circuit reached a peak efficiency of<br>28 % when using MOSFETs PMDXB550UNE and half wave rectifier. <br>

Amplitude Range and Nonlinear Distortion in Amplifier Stages

1983 ◽  
Vol 20 (3) ◽  
pp. 267-274 ◽  
Author(s):  
Pedro A. Martinez ◽  
Tomas Pollan
Keyword(s):  
Field Effect ◽  
Nonlinear Distortion ◽  
Field Effect Transistors ◽  
Bipolar Junction Transistors ◽  
General Description ◽  
Point Location ◽  
Output Amplitude ◽  
Different Types ◽  
Amplifier Stage

This paper presents a general description of the inherent transistor limitations affecting the linearity of its performance in its typical amplifying region. A unified treatment, for bipolar junction transistors and for the different types of field effect transistors, has been developed relating the Q-point location of an amplifier stage with the output amplitude and the nonlinear distortion.

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