scholarly journals Power Dissipation in Spintronic Devices: A General Perspective

2007 ◽  
Vol 7 (1) ◽  
pp. 168-180 ◽  
Author(s):  
Supriyo Bandyopadhyay
Keyword(s):  
Power Dissipation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Bipolar Junction Transistors ◽  
Switching Speed ◽  
Spintronic Device ◽  
Spintronic Devices ◽  
Single Spin ◽  
Spin Switch

Champions of "spintronics" often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional 'charge based' electronic devices. Yet, not a single spintronic device exists today that can lend credence to this claim. Here, I show that no spintronic device that clones conventional electronic devices, such as field effect transistors and bipolar junction transistors, is likely to reduce power dissipation significantly. For that to happen, spin-based devices must forsake the transistor paradigm of switching states by physical movement of charges, and instead, switch states by flipping spins of stationary charges. An embodiment of this approach is the "single spin logic" idea proposed more than 10 years ago. Here, I revisit that idea and present estimates of the switching speed and power dissipation. I show that the Single Spin Switch is far superior to the Spin Field Effect Transistor (or any of its clones) in terms of power dissipation. I also introduce the notion of "matrix element engineering" which will allow one to switch devices without raising and lowering energy barriers between logic states, thereby circumventing the kTln2 limit on energy dissipation. Finally, I briefly discuss single spin implementations of classical reversible (adiabatic) logic.

Characteristics of thin calcium fluoride barrier layers for field-effect transistors and functional electronic devices

2010 ◽  
Vol 36 (5) ◽  
pp. 404-407 ◽  
Author(s):  
Yu. Yu. Illarionov ◽  
M. I. Vexler ◽  
S. M. Suturin ◽  
V. V. Fedorov ◽  
N. S. Sokolov
Keyword(s):  
Calcium Fluoride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Barrier Layers

scholarly journals Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2879
Author(s):  
Amir Muhammad Afzal ◽  
Muhammad Farooq Khan ◽  
Jonghwa Eom
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Spin Precession ◽  
Orbital Interaction ◽  
Transition Metal Dichalcogenide ◽  
Precession Angle ◽  
Spin Orbital ◽  
Spintronic Devices ◽  
Non Local ◽  
Spin Fet

Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS2) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS2 vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS2 spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated.

CNTFET Circuit-Based Wide Fan-In Domino Logic for Low Power Applications

2021 ◽  
pp. 2250036
Author(s):  
Vijay Kumar Sharma
Keyword(s):  
Power Dissipation ◽  
Field Effect ◽  
Performance Metrics ◽  
Field Effect Transistors ◽  
High Current Density ◽  
Cylindrical Tube ◽  
Leakage Power ◽  
Oxide Semiconductor ◽  
Domino Logic ◽  
Leakage Power Dissipation

Carbon nanotube field effect transistors (CNTFETs) are the best alternative option for the metal oxide semiconductor field effect transistor (MOSFET) in the ultra-deep submicron (ultra-DSM) regime. CNTFET has numerous benefits such as lower off-state current, high current density, low bias potential and better transport property as compared to MOSFET. A rolled graphene sheet-based cylindrical tube is constructed in the channel region of the CNTFET structure. In this paper, an improved domino logic (IDL) configuration is proposed for domino logic circuits to improve the different performance metrics. An extensive comparative simulation analysis is provided for the different performance metrics for different circuits to verify the novelty of the proposed IDL approach. The IDL approach saves the leakage power dissipation by 95.61% and enhances the speed by 87.10% for the 4-bit full adder circuit as compared to the best reported available domino method. The effects of the number of carbon nanotubes (CNTs), temperature, and power supply voltage variations are estimated for leakage power dissipation for the 16-input OR (OR16) gate. The reliability of different performance metrics for different circuit is calculated in terms of uncertainty by running the Monte Carlo simulations for 500 samples. Stanford University’s 32[Formula: see text]nm CNTFET model is applied for circuit simulations.

scholarly journals Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation

2019 ◽  
Vol 5 (5) ◽  
pp. eaav3430 ◽  
Author(s):  
Enxiu Wu ◽  
Yuan Xie ◽  
Jing Zhang ◽  
Hao Zhang ◽  
Xiaodong Hu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optical Methods ◽  
Light Illumination ◽  
Switching Speed ◽  
Band Engineering ◽  
As Doping ◽  
Noticeable Improvement ◽  
Photo Detection

Energy band engineering is of fundamental importance in nanoelectronics. Compared to chemical approaches such as doping and surface functionalization, electrical and optical methods provide greater flexibility that enables continuous, reversible, and in situ band tuning on electronic devices of various kinds. In this report, we demonstrate highly effective band modulation of MoTe2 field-effect transistors through the combination of electrostatic gating and ultraviolet light illumination. The scheme can achieve reversible doping modulation from deep n-type to deep p-type with ultrafast switching speed. The treatment also enables noticeable improvement in field-effect mobility by roughly 30 and 2 times for holes and electrons, respectively. The doping scheme also provides good spatial selectivity and allows the building of a photo diode on a single MoTe2 flake with excellent photo detection and photovoltaic performances. The findings provide an effective and generic doping approach for a wide variety of 2D materials.

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

The Fabrication of High-Speed Electronic Devices by Ion-Beam Synthesis of GexSi1-x Strained Layers

1996 ◽  
Vol 438 ◽  
Author(s):  
R. G. Elliman ◽  
H. Jiang ◽  
W. C. Wong ◽  
P. Kringhøj
Keyword(s):  
Oxidation Rate ◽  
Field Effect ◽  
High Speed ◽  
Materials Science ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Ion Beam ◽  
Electronic Devices ◽  
Solid Phase Epitaxy ◽  
Strained Layers

AbstractGexSi1-x, strained layers can be fabricated by Ge implantation and solid-phase epitaxy and can be used in electronic devices to improve their performance. Several important materials science issues are addressed, including the effect of the strain on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The potential of this process is demonstrated by comparing the performance of metal-oxidesemiconductor field-effect-transistors (MOSFETs) employing ion-beam synthesised GeSi strained layer channel regions with that of Si-only devices.

scholarly journals Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
Dawit Gedamu ◽  
Ingo Paulowicz ◽  
Seid Jebril ◽  
Yogendra Kumar Mishra ◽  
Rainer Adelung
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Semiconductor Nanowires ◽  
Semiconductor Nanostructures ◽  
Wafer Level ◽  
Vapor Liquid Solid ◽  
Micro Structures

1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. In present work we demonstrate the fabrication of 1D nano- and mesostructures between microstructured contacts formed directly on a silicon chip either by a thin film fracture (TFF) approach or by a modified vapor-liquid-solid (MVLS) approach. In principle, both approaches offer the possibilities to integrate these nano-meso structures in wafer-level fabrications. Electrical properties of these nano-micro structures integrated on Si chips and their preliminary applications in the direction of sensors and field effect transistors are also presented.

Interfacing Biology with Electronic Devices

2005 ◽  
Vol 108-109 ◽  
pp. 789-796 ◽  
Author(s):  
Andreas Offenhäusser ◽  
Sven Ingebrandt ◽  
Dirk Mayer
Keyword(s):  
Tissue Culture ◽  
Information Processing ◽  
Molecular Biology ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
The Other ◽  
Pharmacological Effects ◽  
Distributed Information ◽  
Microelectronic Devices

Due to a number of advances in molecular biology, cell and tissue culture in combination with more sensitive methods to transduce biological signals, it has become increasingly feasible to detect unknown toxicity or pharmacological effects by using biological systems which are electrically coupled to micro- or nanoelectrodes or field-effect transistors (FETs). The coupling of biomolecules with electronic devices is demonstrated. In order to identify the contributions of the various cell signals we have investigated the coupling of cardiac myocytes with FETs. On the other side such systems can also be used to study the very basics of distributed information processing by interfacing cultured neuronal networks with microelectronic devices.

scholarly journals Comparative Analysis of Different Figures of Merit for Algan/Gan and Si Surrounding-Gate Field Effect Transistors (SG-Fets)

2021 ◽  
Author(s):  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Manoj Singh Adhikari ◽  
Dharam Buddhi ◽  
Santosh Kumar Gupta
Keyword(s):  
Power Dissipation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Height ◽  
High Electron ◽  
Current Output ◽  
Dynamic Power ◽  
Figures Of Merit ◽  
Surrounding Gate ◽  
Intrinsic Gain

Abstract The combination of better transport properties of III-V group semiconductors along with excellent electrostatic control of surrounding gate is a promising option for the future low power electronics. Accordingly in this brief, the major figures of merit (FOM) including output current, output conductance (gd), transconductance generation factor (TGF), intrinsic gain (dB), and dynamic power dissipation are computed for surrounding-gate field effect transistors (SG-FETs) considering III-V group semiconductors and Si channel material respectively with respect to different device parameters. It is noticed that the center potential is higher in AlGaN/GaN SG-FET than Si for different values of channel length (CL), channel height (H), oxide thickness (tox), and doping concentration (Nd). The AlGaN/GaN SG-FET provides lower gd than Si for different values of CL, H, tox, and Nd as required for MOS analog circuits to achieve higher gain. The peak value of TGF and intrinsic gain is higher in AlGaN/GaN than Si SG-FET for different values of CL, H, tox, and Nd. In this work, we have analyzed the MOSFET structure for normally off operation of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce dynamic power dissipation (PD). The magnitude of PD is calculated to be lower in normally off AlGaN/GaN SG-FET than Si for different values of CL, H, and tox.

scholarly journals SIMULATION AND ANALYSIS OF 3T AND 4T CNTFET DRAM DESIGN IN 32nm TECHNOLOGY

2014 ◽  
pp. 53-59
Author(s):  
N. SOMORJIT SINGH ◽  
DR.M. MADHESWARAN
Keyword(s):  
Carbon Nanotube ◽  
Power Dissipation ◽  
Delay Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Leakage Power ◽  
Memory Cells ◽  
Time Dynamic

Carbon Nanotube Field Effect Transistors (CNTFETs) is a promising device alternative for future nanometersscale technology. This paper presents 3TCNTFET & 4TCNTFET simulation and analysis of DRAM with metallic CNTFET using a CNTFET SPICE(HSPICE) model with 32ns technology have shown the DRAM cells in terms of leakage power, power dissipation, delay time, dynamic write and read power. Here, comparison between 4TDRAM and 3TDRAM memory cells is also shown which 3TDRAM has better performance in power dissipation and leakage power than 4TDRAM cell, but less delay in 4TDRAM.

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