Temperature dependent solubility of gold nanoparticle suspension/solutions

RSC Advances ◽  
2016 ◽  
Vol 6 (74) ◽  
pp. 70638-70643 ◽  
Author(s):  
J. A. Powell ◽  
R. M. Schwieters ◽  
K. W. Bayliff ◽  
E. N. Herman ◽  
N. J. Hotvedt ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Gold Nanoparticle ◽  
Temperature Dependent ◽  
Nanoparticle Suspension

We present measurements of the temperature dependence of thermally reversible solubility for a nanoparticle (NP) suspension/solution.

19F Nuclear Quadrupole Coupling in some Halomethanes

1986 ◽  
Vol 41 (1-2) ◽  
pp. 171-174 ◽  
Author(s):  
M. Frank ◽  
F. Gubitz ◽  
W. Ittner ◽  
W. Kreische ◽  
A. Labahn ◽  
...  
Keyword(s):  
Angular Distribution ◽  
Simple Model ◽  
Temperature Dependence ◽  
Coupling Constants ◽  
Temperature Dependent ◽  
Distribution Method ◽  
Quadrupole Coupling ◽  
Time Differential ◽  
Nuclear Quadrupole

The 19F quadrupole coupling constants in CF4, CHF3, CClF3 and CHClF2 are reported. The measurements were carried out temperature dependent using the time differential perturbed angular distribution method (TDPAD). The temperature dependence can be satisfactorily described in the framework of the Bayer-Kushida theory. A simple model is used to explain the appearance of H-F and Cl-F coupling constants in CHF3/CHClF2 and CClF3, respectively.

Electronic Properties of Bismuth Nanowires

2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Bismuth Nanowires ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

On Free Vibrations at Temperature-Dependent Material Properties and Transient Temperature Fields

1972 ◽  
Vol 39 (3) ◽  
pp. 723-726 ◽  
Author(s):  
U. Olsson
Keyword(s):  
Temperature Dependence ◽  
Analytical Solutions ◽  
Material Properties ◽  
Free Vibrations ◽  
Temperature Fields ◽  
Transient Temperature ◽  
Material Damping ◽  
Temperature Dependent ◽  
Temperature Variations ◽  
Damping Parameter

The influence of the temperature-dependence of the material properties on the free vibrations of transiently heated structures is investigated. Analytical solutions are given for linear, exponential, and harmonic temperature variations when the material damping parameter, Poisson’s ratio, and Young’s modulus depend on the temperature.

Temperature dependent electronic band structure of wurtzite GaAs nanowires

Nanoscale ◽  
2018 ◽  
Vol 10 (3) ◽  
pp. 1481-1486 ◽  
Author(s):  
Neimantas Vainorius ◽  
Simon Kubitza ◽  
Sebastian Lehmann ◽  
Lars Samuelson ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Band Structure ◽  
Temperature Dependence ◽  
Electronic Band Structure ◽  
Temperature Dependent ◽  
Electronic Band ◽  
Gaas Nanowires

Temperature dependence of the indicated transitions in wurtzite GaAs.

On the time delay of the photoplastic effect

1986 ◽  
Vol 1 (1) ◽  
pp. 3-6 ◽  
Author(s):  
Joseph Pellegrino ◽  
J. M. Galligan
Keyword(s):  
Time Delay ◽  
Temperature Dependence ◽  
Cadmium Telluride ◽  
Deformation Temperature ◽  
Mercury Cadmium Telluride ◽  
Charge Carriers ◽  
Temperature Dependent ◽  
Simple Analysis ◽  
Photoplastic Effect

Photoplasticity in mercury cadmium telluride, Hg1-x Cdx Te with x = 0.3, has been studied as a function of light frequency and deformation temperature. We show that there is an easily measurable time delay accompanying irradiation of the crystal and the change in stress. This time delay is temperature dependent, suggesting a diffusion of charge carriers, introduced by the light, to the interior of the crystal. A simple analysis is given of the observed temperature dependence that is consistent with the experiments.

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

On the Analysis of the Activation Volume

1976 ◽  
Vol 31 (7) ◽  
pp. 728-730
Author(s):  
A. S. Rrausz
Keyword(s):  
Temperature Dependence ◽  
Activation Volume ◽  
Stress Sensitivity ◽  
Dislocation Climb ◽  
Rate Theory ◽  
Dislocation Mobility ◽  
Velocity Measurements ◽  
Temperature Dependent ◽  
Measured Stress ◽  
Similar Dependence

Abstract The stress and temperature dependence of the activation volume is often explained by a similar dependence of the measured stress sensitivity. This explanation cannot be reconciled with the nonconservative motion of jogs, with dislocation climb, nor with the intersection mechanism. It is in contradiction with the results obtained in direct dislocation velocity measurements as well. It is now shown that when the backward movement of the dislocations is taken into consideration an explanation, consistent with the rate theory and with the dislocation mobility observations, can be developed. The analysis shows that with constant activation volume the stress sensitivity is stress and temperature dependent, in agreement with the corresponding measurements and mechanisms.

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

STUDY OF MOLECULAR MOTIONS IN TWO LIQUID CRYSTAL FORMING COMPOUNDS EMPLOYING PLS

2006 ◽  
Vol 20 (14) ◽  
pp. 2019-2034 ◽  
Author(s):  
K. CHANDRAMANI SINGH ◽  
M. SHARMA ◽  
P. C. JAIN
Keyword(s):  
Liquid Crystal ◽  
Temperature Dependence ◽  
Liquid Crystalline ◽  
Positron Lifetime ◽  
Strong Temperature Dependence ◽  
Molecular Motions ◽  
Temperature Dependent ◽  
Slow Cooling ◽  
Positron Lifetime Spectroscopy ◽  
Motion Studies

Results of molecular motion studies carried out in two liquid crystal forming compounds n-p-cyano-p-hexyloxybiphenyl (M18) and n-p-ethoxybenzylidene-p-butylaniline (EBBA) using positron lifetime spectroscopy (PLS) are presented. Temperature dependent positron lifetime measurements have been performed in each compound during the heating cycle of samples prepared by either quenching or slow cooling from the respective liquid crystalline phase of the compounds. In both the compounds, behaviors of the quenched and slow cooled samples are found to be different. The material in the quenched sample, unlike the slow-cooled sample, exhibits strong temperature dependence before it undergoes a glass transition. In each case, the temperature dependence of o-Ps pick-off lifetime in the quenched sample shows broad peaks at various characteristic temperatures. These peaks have been attributed to various intra- and inter-molecular motions associated with these compounds. The characteristic frequencies of some of the modes observed in the present work agree well with the literature reported values obtained from FIR and Raman studies. The present study demonstrates the usefulness of PLS in the study of molecular motions.

Origin of ferroelectric phase transition in SbSClxI1-x mixed crystals

2014 ◽  
Vol 28 (30) ◽  
pp. 1450209 ◽  
Author(s):  
A. Audzijonis ◽  
L. Žigas ◽  
R. Sereika ◽  
R. Žaltauskas
Keyword(s):  
Phase Transition ◽  
Free Energy ◽  
Temperature Dependence ◽  
Ferroelectric Phase Transition ◽  
Ferroelectric Phase ◽  
Harmonic Approximation ◽  
Temperature Dependent ◽  
Normal Coordinate ◽  
Unit Cell Parameters ◽  
Cell Parameters

The measurements of SbSCl x I 1-x(x = 0.2) temperature dependent capacitance were carried out. The temperature of ferroelectric phase transition TC ≈340 K was measured experimentally. TC of SbSCl x I 1-x was calculated theoretically in anharmonic and harmonic approximations. TC was calculated in anharmonic approximation using temperature dependence of mean potential energy of Sb atoms as a function of the soft B1u symmetry normal coordinate along c(z)-axis. Moreover, TC was calculated in harmonic approximation using temperature dependence of vibrational thermodynamic functions (Helmholc free energy). TC dependence from unit cell parameters a, b and from mixture composition x was carried out.

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