Self-assembled multiferroic perovskite–spinel nanocomposite thin films: epitaxial growth, templating and integration on silicon

2019 ◽  
Vol 7 (30) ◽  
pp. 9128-9148 ◽  
Author(s):  
Dong Hun Kim ◽  
Shuai Ning ◽  
Caroline A. Ross

The recent progress on self-assembled epitaxial nanocomposites on silicon or templated substrates for low cost and large area devices.

2021 ◽  
Author(s):  
Shikhar Misra ◽  
Haiyan Wang

This review summarizes the recent progress in self-assembled oxide-metal nanocomposites, their design criteria using the in-plane strain compensation model, functionalities, and the coupling between electrical, magnetic and optical properties


2011 ◽  
Vol 1335 ◽  
Author(s):  
Qiong Wu ◽  
Juanyuan Hao ◽  
Shoulei Shi ◽  
Weifeng Wang ◽  
Nan Lu

ABSTRACTWe report a low-cost and high-throughput method to fabricate large-area light emitting pattern via thermal evaporation of organic molecules on the patterned self-assembled monolayer of homogenous 3-aminopropyltrimethoxysilane. This method is based on the selective deposition of the organic light emitting molecules on the template of self-assembled monolayer (SAM), which is patterned with nanoimprinting lithography. The selectivity can be controlled by adjusting the design of the pattern, the storage duration and the substrate temperature. The deposition selectivity of the molecules may be caused by the different binding energy of the molecules with the SAM and the substrate surface.


1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.


2002 ◽  
Vol 721 ◽  
Author(s):  
M. L. Yan ◽  
N. Powers ◽  
D. J. Sellmyer

AbstractWe report the non-epitaxial growth of highly textured (001) CoPt:B2O3 nanocomposite thin films that are deposited directly on thermally-oxidized Si wafers. Multilayers of Co/Pt/Co/B2O3 are deposited followed by appropriate thermal processing. The as-deposited films are disordered fcc CoPt phase, and magnetically soft. After annealing, an (001) orientation of CoPt-ordered grains is developed. The texture development is dependent both on the total film thickness and the annealing process. Nearly perfect (001) texture can be obtained in films with thinner initial layer thicknesses. Strong perpendicular anisotropy is shown to be related to this (001) texture.


2019 ◽  
Vol 471 ◽  
pp. 116-123 ◽  
Author(s):  
Tae Cheol Kim ◽  
Seung Han Lee ◽  
Hyun Kyu Jung ◽  
Young Eun Kim ◽  
Jun Woo Choi ◽  
...  

2020 ◽  
Vol 230 ◽  
pp. 00006
Author(s):  
Paola Lova ◽  
Paolo Giusto ◽  
Francesco Di Stasio ◽  
Giovanni Manfredi ◽  
Giuseppe M. Paternò ◽  
...  

Thanks to versatile optoelectronic properties solution processable perovskites have attracted increasing interest as active materials in photovoltaic and light emitting devices. However, the deposition of perovskite thin films necessitates wide range solvents that are incompatible with many other solution-processable media, including polymers that are usually dissolved by the perovskite solvents. In this work, we demonstrate that hybrid perovskite thin films can be coupled with all polymer planar photonic crystals with different approaches to achieve emission intensity enhancement and reshaping using different approaches. The possibility to control and modify the emission spectrum of a solution processable perovskite via a simple spun-cast polymer structure is indeed of great interest in optoelectronic applications requiring high color purity or emission directionality. Furthermore, thanks to the ease of fabrication and scalability of solution-processed photonic crystals, this approach could enable industrial scale production of low-cost, large area, lightweight and flexible polymer-perovskite lighting devices, which may be tuned without resorting to compositional engineering.


2020 ◽  
Vol 2 (9) ◽  
pp. 4172-4178
Author(s):  
Matias Kalaswad ◽  
Bruce Zhang ◽  
Xuejing Wang ◽  
Han Wang ◽  
Xingyao Gao ◽  
...  

Integration of highly anisotropic multiferroic thin films on silicon substrates is a critical step towards low-cost devices, especially high-speed and low-power consumption memories.


2009 ◽  
Vol 6 (S1) ◽  
pp. S912-S916 ◽  
Author(s):  
Ralph Schmittgens ◽  
Marcus Wolf ◽  
Eberhard Schultheiss

2010 ◽  
Vol 25 (12) ◽  
pp. 2426-2429 ◽  
Author(s):  
Guangjun Wang ◽  
Gang Cheng ◽  
Binbin Hu ◽  
Xiaoli Wang ◽  
Shaoming Wan ◽  
...  

In this paper, polycrystalline CuIn(SxSe1–x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1–x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1–x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.


1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.


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