From photon emission microscopy to Raman spectroscopy: Failure analysis in microelectronics

2004 ◽  
Vol 27 (1-3) ◽  
pp. 59-65 ◽  
Author(s):  
I. De Wolf ◽  
M. Rasras
Keyword(s):  
Raman Spectroscopy ◽  
Failure Analysis ◽  
Photon Emission ◽  
Emission Microscopy

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

Failure Analysis Methodology on Resistive Open Defects

2014 ◽  
Author(s):  
A.C.T. Quah ◽  
G.B. Ang ◽  
D. Nagalingam ◽  
C.Q. Chen ◽  
H.P. Ng ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Photon Emission ◽  
Analysis Methodology ◽  
Failure Path ◽  
Open Defect ◽  
Emission Microscopy ◽  
Open Defects ◽  
Logic Array ◽  
Failure Site

Abstract This paper describes the observation of photoemissions from saturated transistors along a connecting path with open defect in the logic array. By exploiting this characteristic phenomenon to distinguish open related issues, we described with 2 case studies using Photon Emission Microscopy, CAD navigation and layout tracing to identify the ‘open’ failure path. Further layout and EBAC analysis are then employed to effectively localize the failure site.

Failure Analysis of SOI Bipolar Device Using Photon Emission Microscopy

2004 ◽  
Author(s):  
Todd M. Simons ◽  
Bob Davis
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Silicon On Insulator ◽  
The Other ◽  
No Emission ◽  
Analysis Process ◽  
Soi Devices ◽  
Emission Microscopy ◽  
Optical Paths

Abstract Photon emission microscopy (PEM) provides a valuable first step in the failure analysis process. An analysis of a mixed signal bipolar/CMOS silicon on insulator (SOI) device revealed an abnormal emission site that appeared to emanate from the oxide isolation ring. Subsequent mechanical probing of the emitting bipolar transistor revealed node voltages nearly identical to a known good reference unit that had no emission site at the affected transistor. This article analyzes the reasons for the emission site on one transistor and not the other even though the node voltages were the same. It was observed that while the node voltages were nearly identical, the available current paths were not. The different paths directly related to the amount of available carriers for recombination in the base. The construction of the SOI device creates unique optical paths for emission sites not observed in non-SOI devices. It can be concluded that the failure mechanism does not always reside at the abnormal PEM site.

Failure Analysis of Sub-Micron Semiconductor Integrated Circuit Using Backside Photon Emission Microscopy

1999 ◽  
Author(s):  
Soon Lim ◽  
Jian Hua Bi ◽  
Lian Choo Goh ◽  
Soh Ping Neo ◽  
Sudhindra Tatti
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Photon Emission ◽  
Fault Isolation ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Emission Microscopy ◽  
On Chip

Abstract The progress of modern day integrated circuit fabrication technology and packaging has made fault isolation using conventional emission microscopy via the top of the integrated circuit more difficult, if not impossible. This is primarily due to the use of increased levels and density of metal-interconnect, and the advent of new packaging technology, e.g. flip-chip, ball-grid array and lead-on-chip, etc. Backside photon emission microscopy, i.e. performing photon emission microscopy through the bulk of the silicon via the back of the integrated circuit is a solution to this problem. This paper outlines the failure analysis of sub-micron silicon integrated circuits using backside photon emission microscopy. Sample preparation, practical difficulties encountered and case histories will be discussed.

Effectiveness of Emission Microscopy in the Failure Analysis of CMOS ASIC Devices

1997 ◽  
Author(s):  
K. H. Parekh ◽  
R. Milburn
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Photon Emission ◽  
Reliability Test ◽  
Input Output ◽  
End User ◽  
Final Test ◽  
Leakage Currents ◽  
Emission Microscopy ◽  
Scanning Electron

Abstract In the last several years emission microscopy has become an essential tool for failure analysis, specifically for VLSI devices. This paper describes various die related failure mechanisms in CMOS ASIC devices which were detected by emission microscopy. The failure analysis results discussed in this paper are primarily of the devices which were analyzed over the period of the last three years, 1994 - 1996. These devices were from a broad spectrum of final test failures, qualification and reliability test failures, special evaluation failures, testing and assembly failures at customer sites, and end user field failures. In addition to the failure mechanism statistic scanning electron micrographic illustrations of some of the failure mechanisms and associated damage are presented in this paper. The data presented in this paper clearly show the effectiveness of photon emission microscopy. The value of emission microscopy really lies in quick detection of failure locations on the die which failed functionally or due to excessive static IOD, functional IOD, or input/output leakage currents. It has certainly impacted tum around time of the analysis as significant reduction in analysis time has been achieved. In some cases same day turn around was possible.

Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy

1999 ◽  
Author(s):  
Mahmoud Rasras ◽  
Ingrid De Wolf ◽  
Guido Groeseneken ◽  
Jian Chen ◽  
Karlheinz Bock ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Profile ◽  
Impact Ionization ◽  
Light Emission ◽  
Photon Emission ◽  
Profile Measurement ◽  
Esd Protection ◽  
Protection Devices ◽  
Emission Microscopy ◽  
Failure Site

Abstract In this paper, Photon Emission Microscopy (PEM) and micro-Raman Spectroscopy (μRS) are applied for temperature profile measurements and failure characterization in gg-nMOS ESD protection devices. The measurements were carried out in avalanche and snapback biasing conditions. A correlation between the temperature profile obtained by μRS and the light emission location, measured by PEM, is observed for non-degraded devices. In addition, ESD-degraded devices were studied. PEM, μRS, Spectroscopic Photon Emission Microscopy (SPEM) and electrical measurements were used to investigate the origin of the light emitted at the failure site. They showed that the light emission occurring at the failure site is due to impact ionization.

Submicron Simultaneous IR and Raman Spectroscopy (IR+Raman): Breakthrough Developments in Optical Photothermal IR (O-PTIR) Combined for Enhanced Failure Analysis

2019 ◽  
Author(s):  
Jay Anderson ◽  
Mustafa Kansiz ◽  
Michael Lo ◽  
Curtis Marcott
Keyword(s):  
Raman Spectroscopy ◽  
Failure Analysis ◽  
Data Quality ◽  
Raman Spectra ◽  
Spatial Resolution ◽  
Far Field ◽  
Field Mode ◽  
Microscopic Scale ◽  
Analytical Tools ◽  
Ir And Raman

Abstract Failure analysis of organics at the microscopic scale is an increasingly important requirement, with traditional analytical tools such as FTIR and Raman microscopy, having significant limitations in either spatial resolution or data quality. We introduce here a new method of obtaining Infrared microspectroscopic information, at the submicron level in reflection (far-field) mode, called Optical-Photothermal Infrared (O-PTIR) spectroscopy, that can also generate simultaneous Raman spectra, from the same spot, at the same time and with the same spatial resolution. This novel combination of these two correlative techniques can be considered to be complimentary and confirmatory, in which the IR confirms the Raman result and vice-versa, to yield more accurate and therefore more confident organic unknowns analysis.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

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