An apparatus for supersonic jet epitaxy of thin films

2000 ◽  
Vol 71 (3) ◽  
pp. 1479-1487 ◽  
Author(s):  
S. A. Ustin ◽  
K. A. Brown ◽  
W. Ho
Keyword(s):  
Thin Films ◽  
Supersonic Jet ◽  
Supersonic Jet Epitaxy

Growth of Cubic SiC Thin Films on Silicon from Single Source Precursors by Supersonic Jet Epitaxy

1996 ◽  
Vol 441 ◽  
Author(s):  
Jin-Hyo Boo ◽  
Scott A. Ustin ◽  
Wilson Ho ◽  
H. Paul Maruska ◽  
Peter E. Norris ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Supersonic Jet ◽  
Silicon On Insulator ◽  
X Ray Diffraction ◽  
Molecular Precursors ◽  
Transmission Electron ◽  
Supersonic Jet Epitaxy ◽  
Soi Substrates

AbstractCubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780 - 1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH3)2CHSiH(CH3)2, and diethylmethylsilane, (CH3CH2)2SiHCH3. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.

Large Area Supersonic Jet Epitaxy of AlN, GaN, and SiC on Silicon

1996 ◽  
Vol 449 ◽  
Author(s):  
L.J. Lauhon ◽  
S. A. Ustin ◽  
W. Ho
Keyword(s):  
Supersonic Jet ◽  
X Ray Diffraction ◽  
Large Area ◽  
Free Jets ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Supersonic Jet Epitaxy ◽  
Carrier Gases

ABSTRACTAlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

Supersonic jet epitaxy of silicon carbide on silicon using methylsilane

1998 ◽  
Vol 42 (12) ◽  
pp. 2321-2327 ◽  
Author(s):  
S.A. Ustin ◽  
C. Long ◽  
W. Ho
Keyword(s):  
Silicon Carbide ◽  
Supersonic Jet ◽  
Supersonic Jet Epitaxy

Supersonic Jet Epitaxy: An Improved Method for Nitride Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Peter E. Norris ◽  
Long D. Zhu ◽  
H. Paul Maruska ◽  
Wilson HO ◽  
Scott Ustin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Microwave Plasma ◽  
Supersonic Jet ◽  
Plasma Source ◽  
Improved Method ◽  
High Quality ◽  
Carrier Gas ◽  
Sapphire Substrates ◽  
Supersonic Jet Epitaxy ◽  
Gan Crystal

ABSTRACTGaN was grown by supersonic jet epitaxy(SSJE), seeding triethylgallium in helium carrier gas. Activated nitrogen was supplied by a microwave plasma source. Single crystalline GaN films were deposited on the Si-face 6H-SiC and the c-plane sapphire substrates at 600–670°C. A cubic SiC buffer layer was grown onSi(111) at 800°C by SSJE using dichlorosilane, acetylene, and a high quality GaN crystal was grown on this template at 630°C. The materials high quality was proved by hard rectifying characteristics of a diode with an N-GaN/β-SiC/P-Si(111) structure.

Supersonic jet epitaxy of III-nitride semiconductors

1997 ◽  
Vol 178 (1-2) ◽  
pp. 134-146 ◽  
Author(s):  
B.A. Ferguson ◽  
C.B. Mullins
Keyword(s):  
Supersonic Jet ◽  
Nitride Semiconductors ◽  
Supersonic Jet Epitaxy

Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy

2004 ◽  
Vol 96 (8) ◽  
pp. 4556-4562 ◽  
Author(s):  
Nicholas A. Smith ◽  
H. Henry Lamb ◽  
Arthur J. McGinnis ◽  
Robert F. Davis
Keyword(s):  
Surface Roughness ◽  
Supersonic Jet ◽  
Homoepitaxial Growth ◽  
Supersonic Jet Epitaxy

Single Crystal Gallium Nitride on Silicon Using SiC as an Intermediate Layer

1997 ◽  
Vol 482 ◽  
Author(s):  
S. A. Ustin ◽  
W. Ho
Keyword(s):  
Supersonic Jet ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Rocking Curve ◽  
Intermediate Layers ◽  
Transmission Electron ◽  
Single Source Precursor ◽  
Supersonic Jet Epitaxy

AbstractGaN films have been grown atop SiC intermediate layers on Si(001) and Si(111) substrates using supersonic jet epitaxy (SJE). GaN growth temperatures ranged between 600 °C and 775 °C. Methylsilane (H3SiCH3) was used as the single source precursor for SiC growth and triethylgallium (TEG) and ammonia (NH 3) were the sources for GaN epitaxy. The GaN growth rate was found to depend strongly on substrate orientation, growth temperature, and flux. Structural characterization of the films was done by transmission electron diffraction (TED) and x-ray diffraction (XRD). Growth of GaN on SiC(002) produces a cubic or mixed phase of cubic and wurtzite depending on growth conditions. Growth on SiC(111) produces predominantly wurtzite GaN(0002). Minimum rocking curve widths for GaN(0002) on SiC/Si(111) and GaN(002) on SiC/Si(001) are 0.6° and 1.5°, respectively. Cross Sectional Transmission Electron Microscopy (XTEM) was also performed.

scholarly journals ZnO Nanostructured Thin Films via Supersonic Plasma Jet Deposition

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 788
Author(s):  
Chiara Carra ◽  
Elisa Dell’Orto ◽  
Vittorio Morandi ◽  
Claudia Riccardi
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Film Growth ◽  
Supersonic Jet ◽  
Optical Emission ◽  
Attenuated Total Reflection ◽  
Zno Films ◽  
Nanostructured Thin Films ◽  
Deposition Parameters ◽  
Deposition Processes

Zinc Oxide nanostructured thin films were grown by a novel plasma assisted vapour deposition method, which aims to combine the versatility of deposition processes that are mediated by plasma with the capability to control particles diffusion and nucleation. For this purpose, the proposed approach spatially separates into two different vacuum chambers the creation of zinc oxide from a metalorganic precursor from the actual film growth, thanks to the extraction of a supersonic jet of plasma seeded by the precursor fragments. The characterization of the reactor in different plasma conditions has been carried out by means of optical emission spectroscopy (OES). ZnO films with different degrees of purity, thickness uniformity, as well as different morphologies can be obtained varying the deposition parameters. The samples profiles have been collected in order to evaluate deposition rates and films uniformity. The as-prepared as well as annealed thin films were characterized by attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) to evaluate their chemical composition and purity. According to Raman analyses, the annealed samples are high-purity wurtzite-type crystalline zinc oxide films. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) confirm a surface morphology characterized by columnar structures.

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