scholarly journals Molecular adhesion controlled microelectromechanical memory device for harsh environment data storage

2014 ◽  
Vol 105 (11) ◽  
pp. 113503 ◽  
Author(s):  
Geng Li Chua ◽  
Pushpapraj Singh ◽  
Bo Woon Soon ◽  
Ying Shun Liang ◽  
Karthik Gopal Jayaraman ◽  
...  
Keyword(s):  
Data Storage ◽  
Memory Device ◽  
Harsh Environment ◽  
Molecular Adhesion

scholarly journals Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 905
Author(s):  
Junhyeok Choi ◽  
Sungjun Kim
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Memory Device ◽  
Comparison Study ◽  
Tio2 Layer ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Improved Stability ◽  
Switching Characteristics

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

A stacked memory device on logic 3D technology for ultra-high-density data storage

2011 ◽  
Vol 22 (25) ◽  
pp. 254006 ◽  
Author(s):  
Jiyoung Kim ◽  
Augustin J Hong ◽  
Sung Min Kim ◽  
Kyeong-Sik Shin ◽  
Emil B Song ◽  
...  
Keyword(s):  
Data Storage ◽  
Memory Device ◽  
High Density ◽  
3D Technology ◽  
Density Data ◽  
Stacked Memory

scholarly journals Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7535
Author(s):  
Ghulam Dastgeer ◽  
Amir Muhammad Afzal ◽  
Jamal Aziz ◽  
Sajjad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Resistance State ◽  
Building Blocks ◽  
Memory Device ◽  
Memory Storage ◽  
Memory Devices ◽  
Two Dimensional ◽  
Ag Filament ◽  
Resistance State

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

scholarly journals Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 518 ◽  
Author(s):  
Lei Li
Keyword(s):  
Graphene Oxide ◽  
Charge Transport ◽  
Data Storage ◽  
Energy Band ◽  
Memory Device ◽  
Nanocomposite Films ◽  
Memory Devices ◽  
The Novel ◽  
Trilayer Structure ◽  
Novel Design

A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I–V fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.

scholarly journals Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6629
Author(s):  
Wang Ke ◽  
Xiaoting Yang ◽  
Tongyu Liu
Keyword(s):  
Data Storage ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Memory Device ◽  
Resistance Switching ◽  
Memory Devices ◽  
Switching Effect ◽  
Short Period ◽  
Non Volatile Memory ◽  
Order Of Magnitude

In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI2 perovskite film, the Ag/CsPbBrI2/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI2/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI2 perovskite film is uniform and dense, and the Ag/CsPbBrI2/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI2/ITO memory devices based on CsPbBrI2 perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI2 film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.

scholarly journals Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2085
Author(s):  
Lu Wang ◽  
Tianyu Yang ◽  
Dianzhong Wen
Keyword(s):  
Carbon Nanotubes ◽  
Data Storage ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Multilevel Data ◽  
Access Memory ◽  
Current Limit ◽  
Egg Albumen

In this paper, a tuneable multilevel data storage bioresistive memory device is prepared from a composite of multiwalled carbon nanotubes (MWCNTs) and egg albumen (EA). By changing the concentration of MWCNTs incorporated into the egg albumen film, the switching current ratio of aluminium/egg albumen:multiwalled carbon nanotubes/indium tin oxide (Al/EA:MWCNT/ITO) for resistive random access memory increases as the concentration of MWCNTs decreases. The device can achieve continuous bipolar switching that is repeated 100 times per cell with stable resistance for 104 s and a clear storage window under 2.5 × 104 continuous pulses. Changing the current limit of the device to obtain low-state resistance values of different states achieves multivalue storage. The mechanism of conduction can be explained by the oxygen vacancies and the smaller number of iron atoms that are working together to form and fracture conductive filaments. The device is nonvolatile and stable for use in rewritable memory due to the adjustable switch ratio, adjustable voltage, and nanometre size, and it can be integrated into circuits with different power consumption requirements. Therefore, it has broad application prospects in the fields of data storage and neural networks.

MEM-FLASH non-volatile memory device for high-temperature multibit data storage

2019 ◽  
Vol 115 (4) ◽  
pp. 043501
Author(s):  
Pushpapraj Singh ◽  
Dhairya Singh Arya ◽  
Udit Jain
Keyword(s):  
High Temperature ◽  
Data Storage ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Volatile Memory
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