Study Ratio Between the CuO and Eu2O3 Concentrations on Electrical Resistivity, Seebeck Coefficient and Power Factor of CuEu2O4

2021 ◽  
Vol 222 (1) ◽  
pp. 38-43
Author(s):  
P. Yamchumporn ◽  
K. Boonin ◽  
K. Singsoog ◽  
T. Seetawan ◽  
J. Kaewkho
2012 ◽  
Vol 622-623 ◽  
pp. 726-733 ◽  
Author(s):  
Weerasak Somkhunthot ◽  
Nuwat Pimpabute ◽  
Tosawat Seetawan

Thin films thermoelectric module fabricated by pulsed-dc magnetron sputtering system using Ca3Co4O9(p-type) and ZnO (n-type) targets of 60 mm diameter and 2.5 mm thickness, which were made from powder precursor, and obtained by solid state reaction. Thin films of p-Ca-Co-O (Seebeck coefficient = 143.85 µV/K, electrical resistivity = 4.80 mΩm, power factor = 4.31 µW/m K2) and n-ZnO (Seebeck coefficient =229.24 µV/K, electrical resistivity = 5.93 mΩm, power factor = 8.86 µW/m K2) were used to make a thermoelectric module, which consist of four pairs of legs connected by copper electrodes (0.5 mm thickness, 3.0 mm width, and 3.0-8.0 mm length). Each leg is 3.0 mm width, 20.0 mm length, and 0.44 µm thickness on a glass substrate of 1.0 mm thickness in dimension 25.0x50.0 mm2. For preliminary test, a module was used to thermoelectric power generation. It was found that the open circuit voltage increased with increasing temperature difference from 3 mV at 5 K up to 20 mV at 78 K. The internal resistance of a module reached a value of 14.52 MΩ. This test indicated that a module can be generated the electrical power. Therefore, it can be used as an important platform for further thin films thermoelectric module research.


2009 ◽  
Vol 23 (16) ◽  
pp. 3331-3348 ◽  
Author(s):  
Q. R. HOU ◽  
W. ZHAO ◽  
Y. B. CHEN ◽  
Y. J. HE

N-type polycrystalline higher manganese silicide ( MnSi 1.7) films are prepared on thermally oxidized silicon substrates by magnetron sputtering. MnSi 1.85, Si , and carbon targets are used in the experiments. By co-sputtering of the MnSi 1.85 and Si targets, n-type MnSi 1.7 films are directly obtained. By increasing the Si content to the deposited films, both the Seebeck coefficient and electrical resistivity increase to high values. A Si intermediate layer between the MnSi 1.7 film and substrate plays an important role on the electrical properties of the films. Without the interlayer, the Seebeck coefficient is not stable and the electrical resistivity is higher. For preparation of MnSi 1.7 films by solid phase reaction, a sandwich structure Si / MnSi x/ Si (x < 1.7) and thermal annealing are used. A carbon cap layer is used as a doping source. With the carbon doping, the electrical resistivity of the MnSi 1.7 film decreases, while the Seebeck coefficient increases slightly. For reactive deposition, the MnSi x (x < 1.7) film is directly deposited on the heated substrate with a Si intermediate layer. By using a Si cap layer, a MnSi 1.7 film with a Seebeck coefficient of -292 μ V/K and electrical resistivity of 23 × 10-3 Ω- cm at room temperature is obtained. The power factor reaches 1636 μW/mK2 at 483 K. With such a high power factor, the n-type MnSi 1.7 material may be superior to p-type MnSi 1.7 material for the development of thermoelectric generators. Several smaller (0.036 - 0.099 eV ) and intermediate (0.10 - 0.28 eV ) activation energies are observed from the curves of logarithm of the resistivity versus reciprocal temperature. The larger activation energies (0.35 - 1.1 eV ) are consistent with the reported energy band gaps for higher manganese silicides.


2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.


2006 ◽  
Vol 980 ◽  
Author(s):  
Ken Kurosaki ◽  
Takeyuki Sekimoto ◽  
Kenta Kawano ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka

AbstractPolycrystalline ingots of the lanthanide based ternary intermetallics: LaNiSb, GdNiSb, ErNiSb and ErPdSb were prepared and characterized. The thermoelectric properties of ErNiSb and ErPdSb were measured at high temperatures. We succeeded in preparing the single phase ingots of ErNiSb and ErPdSb, while the ingots of LaNiSb and GdNiSb contain appreciable quantities of the impurity phases. ErNiSb and ErPdSb crystallize the MgAgAs-type structure (half-Heusler structure). ErNiSb and ErPdSb indicate positive values of the Seebeck coefficient. The values at room temperature are 36 and 240 micro VK-1 for ErNiSb and ErPdSb, respectively. The electrical resistivity of ErNiSb and ErPdSb decreases with temperature, indicating semiconductor-like behavior. ErPdSb exhibits a relatively large power factor 1.5x10-3 Wm-1K-2 at around 700 K, which is approximately two times larger than that of ErNiSb.


2013 ◽  
Vol 750 ◽  
pp. 130-133
Author(s):  
Katsuhiro Sagara ◽  
Yun Lu ◽  
Dao Cheng Luan

Analysis model of finite element method with a random distribution for thermoelectric composites was built. Thermoelectric properties including electrical resistivity, Seebeck coefficient and thermal conductivity of M/TiO2–x (M = Cu, Ni, 304 stainless steel (304SS)) thermoelectric composites were investigated by the proposed model. Cu/TiO2–x composite showed a large decrease in electrical resistivity while 304SS/TiO2–x composite thermal conductivity was slightly increased. Calculated dimensionless figure-of-merit, ZT of Ni/TiO2–x composite was higher than those of TiO2–x and the other composites in a wide range of metal volume fractions because Ni has large absolute values of Seebeck coefficient, power factor and dimensionless figure-of-merit compared to the other two metals. It was found that power factor and dimensionless figure-of-merit of thermoelectric composites depended on the balance among electrical resistivity, thermal conductivity and Seebeck coefficient. The results revealed that it is important for M/TiO2–x composites to choose suitable addition metal with high power factor and dimensionless figure-of-merit.


2016 ◽  
Vol 675-676 ◽  
pp. 171-174 ◽  
Author(s):  
Meena Rittiruam ◽  
Arthorn Vora-Ud ◽  
Tosawat Seetawan

CaMnO3 (CMO) thermoelectric material is large Seebeck coefficient but high electrical resistivity. To reduce electrical resistivity by adding carbon nanotubes (CNTs) in CMO material and may be decreased Seebeck coefficient. In this work, we simulated electronic structure of CMO and CNTs-added CMO by DV-Xα method to investigation of power factor and enhance the thermoelectric performance. The Seebeck coefficient and electrical resistivity were calculated by Maxwell-Boltzmann distribution and Mott’s law to investigate power factor. The DV-Xa calculated show the energy level and density of state (DOS) of CMO and CNTs-added CMO demonstrated that the energy gap reduces from 3.33 eV to 0.19 eV affect to enhance the power factor of CMO with Seebeck coefficient and electrical resistivity are decreases. The power factor of CNTs-added CMO was increased with increasing CNTs content.


2015 ◽  
Vol 1120-1121 ◽  
pp. 98-101
Author(s):  
Peng Xia Ji ◽  
Hui Min Zhang ◽  
Ai Min Chang

CO(NH2)2 as pore-former used to prepare porous Ca2.5La0.5Co4O9 thermoelectric materialsby solid-state reaction technique.Microstructure,density and thermoelectric properties (temperature dependence of electrical resistivity,Seebeck coefficient) of the samples were studied in details.The results have shown that the porosity increases and the pore structure is improved with the pore-former content increasing,and electrical resistivity and density decrease while Seebeck coefficient raise.The improvement in electrical resistivity and Seebeck coefficient leads to higher power factor values at 913 K (around 1.32 mW/cm·K2) than undoped samples.


2005 ◽  
Vol 886 ◽  
Author(s):  
Julio E. Rodriguez

ABSTRACTMeasurements of Seebeck coefficient, S(T) and electrical resistivity, ρ(T) on polycrystalline La2−xSrxCuO4+d(LSCO) (0<x≤0.2) samples are reported. The Seebeck coefficient is positive in whole measured temperature range (77K and 300K) and it decreases with Sr content. At room temperature S(T) changes from 400 μ/K for the samples with the lowest levels of Sr to 30 μV/K for the samples with the highest Sr levels. The behavior of S(T) fits to Heikes model, which describes the behavior of Seebeck coefficient in systems where the correlated hopping is present. With the Sr content, the electrical resistivity changes its behavior from semiconducting to metallic and it took values from 2.4 to 10−3Ωcm. From S(T) and rho(T) measurements the thermoelectric power factor, PF was obtained. The maximum values for PF were about 5 μW/K2cm in the samples where x= 0.03, which are comparable to the typical values for conventional thermoelectric semiconductors. The structural and morphological properties of the samples were studied by x-ray diffraction analysis and Scanning Electron Microscopy (SEM) respectively. The behavior of transport properties opens de possibility of considering this family of perovskite-compounds as a thermoelectric material which works below room temperature.


2012 ◽  
Vol 1456 ◽  
Author(s):  
Mani Pokharel ◽  
Huaizhou Zhao ◽  
Kevin Lukas ◽  
Zhifeng Ren ◽  
Cyril Opeil

ABSTRACTThe Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient of FeSbx (x = 2.04, 2.00, and 1.96) nanocomposites hot pressed at 300 °C were measured. The power factor of FeSb1.96 was increased by 105% compared to FeSb2. Hall coefficient measurements revealed a decreased carrier concentration and increased mobility in FeSb1.96 with an overall enhancement in ZTof 45% in FeSb1.96 .


2010 ◽  
Vol 74 ◽  
pp. 72-76 ◽  
Author(s):  
Hitoshi Kohri ◽  
Masahiko Kato ◽  
Isao J. Ohsugi ◽  
Ichiro Shiota

Research and development of thermoelectric generators have been actively carried out to use waste heat. It is well known some p-type oxides show high thermoelectric performance. However, an n-type oxide with high performance has not been found. An n-type CaMnO3 is a promising material because of its high Seebeck coefficient. The electrical resistivity of this oxide is, however, too high to use it practically. Not only high Seebeck coefficient but also low electrical resistivity is required for practical use. At first, we investigated the effects of element substitution in order to decrease the resistivity. N-type CaMn0.9M0.1O3 (M=Cu, In) compounds were prepared by solid-state reaction and hot pressing. The maximum value of power factor for CaMn0.9In0.1O3 was 0.204 mWm-1K-2, which was the largest of all specimens at 673 K. This value was, however, not enough to use it practically. Secondly, we focus attention on Aurivillius compounds. The Aurivillius compounds consist of Perovskite layers and Bi-O layers. We expect that this crystal structure shows large Seebeck coefficient due to the quantum confinement of electron in Perovskite layer. Bi2VO5.5 with Aurivillius structure was prepared by solid-state reaction and hot pressing. The Seebeck coefficient of Bi2VO5.5 decreased with increasing temperature and was positive value below 600 K and was negative value above 600 K. The power factor of annealed Bi2VO5.5 showed the highest value of all specimens at the temperature range above 800 K.


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