Low temperature luminescence from the near surface region of Nd:YAG

2001 ◽  
Vol 13 (11) ◽  
pp. 2497-2515 ◽  
Author(s):  
M Maghrabi ◽  
P D Townsend ◽  
G Vazquez
1984 ◽  
Vol 38 ◽  
Author(s):  
J. Perriere ◽  
J. Siejka ◽  
A. Laurent ◽  
J. P. Enard ◽  
F. D'heurle

AbstractIn the first time, hundreds nm thick oxide layers were formed by room temperature plasma anodization of some refractory disilicides. Nuclear microanalysis and Rutherford backscattering techniques were used to study the anodic oxidation of various metal silicides (Hf, Ti and Zr) in a multipolar oxygen plasma set-up. We have found that the low temperature (<100 °C) plasma anodization kinetics of Hf or Zr silicides is two orders of magnitude higher than that of Ti silicide although their thermodynamic and physicochemical behaviour are very similar. 200 nm thick Hf (or Zr) and Si mixed oxide layers have been obtained in one hour plasma anodization. Analysis of RBS spectra indicates that the ratio of Si to metal cation concentration in the bulk of oxide grownis the same than the silicide (HfSi2 or ZrSi2), while in the near surface region of oxide (20 to 30 nm) there is an enrichment in metallic oxide leading to a Si to Hf (or Zr) concentration ratio equal to unity. The spectacular difference between the anodization rates in oxygen plasma of Hf (and Zr) silicides comparing to Ti silicides can be related to the catalytic effect on plasma anodization of the Hf and Zr oxides.


2007 ◽  
Vol 131-133 ◽  
pp. 333-338 ◽  
Author(s):  
Anis M. Saad ◽  
Olga V. Zinchuk ◽  
N.A. Drozdov ◽  
A.K. Fedotov ◽  
A.V. Mazanik

The main goal of this work is to investigate the influence of low-temperature argon ionbeam treatment on the electric and structural properties of a near-surface region of the standard commercial p-type Cz Si wafers, and to compare the effects of Ar+ and H+ ion-beam treatment. The measurements of thermo-EMF have shown that both Ar+ and H+ ion-beam treatment with the ion energy 200 eV and current density 0.15 mA/cm2 at a temperature of 30 oC during 30 min leads to the p-to-n −type overcompensation of the near-surface layer of silicon wafers. The measurements of photovoltage spectra have shown that (i) Ar+ and H+ treatments in like manner lead to the appearance of a photovoltage signal over a wide spectral region due to the formation of p-n-junction on the treated surface, and (ii) photosensitivity of the Ar+ ion-beam treated wafers in the ultraviolet (UV) spectral region (200-400 nm) is much greater as compared to the wafers subjected to H+ ion beam treatment in the same conditions. The main difference in the Ar+ and H+ ion-beam treatment effects is the formation of a thin (5-20 nm) oxygen-containing dielectric layer on the surface of hydrogenated samples and the absence of such layer in case of Ar+ ion-beam treatment.


Author(s):  
R.C. Dickenson ◽  
K.R. Lawless

In thermal oxidation studies, the structure of the oxide-metal interface and the near-surface region is of great importance. A technique has been developed for constructing cross-sectional samples of oxidized aluminum alloys, which reveal these regions. The specimen preparation procedure is as follows: An ultra-sonic drill is used to cut a 3mm diameter disc from a 1.0mm thick sheet of the material. The disc is mounted on a brass block with low-melting wax, and a 1.0mm hole is drilled in the disc using a #60 drill bit. The drill is positioned so that the edge of the hole is tangent to the center of the disc (Fig. 1) . The disc is removed from the mount and cleaned with acetone to remove any traces of wax. To remove the cold-worked layer from the surface of the hole, the disc is placed in a standard sample holder for a Tenupol electropolisher so that the hole is in the center of the area to be polished.


Author(s):  
John D. Rubio

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.


Author(s):  
S. Cao ◽  
A. J. Pedraza ◽  
L. F. Allard

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.


Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2615 ◽  
Author(s):  
Andreas Lorek ◽  
Jacek Majewski

In experimental chambers for simulating the atmospheric near-surface conditions of Mars, or in situ measurements on Mars, the measurement of the humidity in carbon dioxide gas at low temperature and under low pressure is needed. For this purpose, polymer-based capacitive humidity sensors are used; however, these sensors are designed for measuring the humidity in the air on the Earth. The manufacturers provide only the generic calibration equation for standard environmental conditions in air, and temperature corrections of humidity signal. Because of the lack of freely available information regarding the behavior of the sensors in CO2, the range of reliable results is limited. For these reasons, capacitive humidity sensors (Sensirion SHT75) were tested at the German Aerospace Center (DLR) in its Martian Simulation Facility (MSF). The sensors were investigated in cells with a continuously humidified carbon dioxide flow, for temperatures between −70 °C and 10 °C, and pressures between 10 hPa and 1000 hPa. For 28 temperature–pressure combinations, the sensor calibration equations were calculated together with temperature–dependent formulas for the coefficients of the equations. The characteristic curves obtained from the tests in CO2 and in air were compared for selected temperature–pressure combinations. The results document a strong cross-sensitivity of the sensors to CO2 and, compared with air, a strong pressure sensitivity as well. The reason could be an interaction of the molecules of CO2 with the adsorption sites on the thin polymeric sensing layer. In these circumstances, an individual calibration for each pressure with respect to temperature is required. The performed experiments have shown that this kind of sensor can be a suitable, lightweight, and relatively inexpensive choice for applications in harsh environments such as on Mars.


1992 ◽  
Vol 105-110 ◽  
pp. 1383-1386 ◽  
Author(s):  
Hugh E. Evans ◽  
D.L. Smith ◽  
P.C. Rice-Evans ◽  
G.A. Gledhill ◽  
A.M. Moore

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 693
Author(s):  
Christian Ludt ◽  
Elena Ovchinnikova ◽  
Anton Kulikov ◽  
Dmitri Novikov ◽  
Sibylle Gemming ◽  
...  

This work focuses on the validation of a possible connection of the known Ruddlesden-Popper (RP) phases and the novel concept of the migration-induced field-stabilized polar (MFP) phase. To study this subject, model structures of RP phases in bulk strontium titanate are analyzed by means of density functional theory (DFT). The obtained geometries are compared to experimental MFP data. Good agreement can be found concerning atomic displacements in the pm range and lattice strain inferred by the RP phases. Looking at the energy point of view, the defect structures are on the convex hull of the Gibb’s free energy. Although the dynamics to form the discussed defect models are not addressed in detail, the interplay and stability of the described defect model will add to the possible structure scenarios within the near-surface region of strontium titanate. As a result, it can be suggested that RP phases generally favor the MFP formation.


2009 ◽  
Vol 1203 ◽  
Author(s):  
Erik M. Muller ◽  
John Smedley ◽  
Balaji Raghothamachar ◽  
Mengjia Gaowei ◽  
Jeffrey W. Keister ◽  
...  

AbstractX-ray topography data are compared with photodiode responsivity maps to identify potential candidates for electron trapping in high purity, single crystal diamond. X-ray topography data reveal the defects that exist in the diamond material, which are dominated by non-electrically active linear dislocations. However, many diamonds also contain defects configurations (groups of threading dislocations originating from a secondary phase region or inclusion) in the bulk of the wafer which map well to regions of photoconductive gain, indicating that these inclusions are a source of electron trapping which affect the performance of diamond X-ray detectors. It was determined that photoconductive gain is only possible with the combination of an injecting contact and charge trapping in the near surface region. Typical photoconductive gain regions are 0.2 mm across; away from these near-surface inclusions the device yields the expected diode responsivity.


1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.


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