A high-temperature MEMS heater using suspended silicon structures

2009 ◽  
Vol 19 (11) ◽  
pp. 115011 ◽  
Author(s):  
Kook-Nyung Lee ◽  
Dae-Sung Lee ◽  
Suk-Won Jung ◽  
Yun-Ho Jang ◽  
Yong-Kweon Kim ◽  
...  
Author(s):  
Shifeng Yu ◽  
Shuyu Wang ◽  
Ming Lu ◽  
Lei Zuo

This paper presents a novel micro heater prepared on polyimide thin film with fast response and ultra-uniform temperature distribution in the heating area. The transparent polyimide thin film was fabricated by spin-coating, baking and curing the liquid polyimide on the silicon wafer. A gold heater together with the vanadium oxide based thermistor was integrated on the polyimide thin film. Due to the low thermal conductivity of the polyimide thin film, the MEMS heater could reach high temperature with low power consumption and fast response time. FEA method was applied to optimize the shape of the gold heater to achieve uniform temperature distribution along the heating area. A copper island was also deposited on the back of the heater to improve the uniformity of the temperature distribution. The vanadium oxide based temperature sensor with a high temperature coefficient of resistivity as 2.4% was used for the temperature sensing. The temperature variation among the heating area is less than 0.2°C.


2007 ◽  
Vol 124 (2) ◽  
pp. 421-428 ◽  
Author(s):  
J. Spannhake ◽  
A. Helwig ◽  
G. Müller ◽  
G. Faglia ◽  
G. Sberveglieri ◽  
...  

Sensors ◽  
2006 ◽  
Vol 6 (4) ◽  
pp. 405-419 ◽  
Author(s):  
Jan Spannhake ◽  
Olaf Schulz ◽  
Andreas Helwig ◽  
Angelika Krenkow ◽  
Gerhard Müller ◽  
...  

Pulse diodes are widely used as part of high-frequency pulse circuits. However, it should be noted that the cost of pulsed diodes remains relatively high, due to the low yield of suitable devices when they are sorted according to the criteria of reverse current and rated capacitance. This is largely caused by the significant dependence of their electrical parameters on the density of structural defects and impurities in the active regions of the diodes. The study is devoted to identifying the causes and mechanisms of the low yield of diodes when they are sorted according to the criteria of reverse current and rated capacitance, as well as determining the possibility of using gettering operations to increase the yield of suitable devices. It is found that the low yield of the diodes is caused by the structural defects that are formed in the active areas of the diodes during high-temperature technological operations. The paper describes the mechanisms in which the structural defects affect the electrical parameters of diodes. The proposed technology for manufacturing diode structures using gettering of structural impurity defects by means of high-temperature annealing in an inert medium before the thermal oxidation operation is considered. It is shown that high-temperature annealing of silicon structures before thermal oxidation eliminates packing defects formed during epitaxy, cleans the active areas of the diodes from nuclei of defects and unwanted impurities, and prevents the formation of structural defects in them during the subsequent high-temperature thermal operations. The use of the proposed technology allows increasing the yield of suitable diode structures by 8.9% when sorted according to rated capacitance and by 9.4% when sorted according to reverse current, the level of reverse currents reducing by 2—9 times.


Author(s):  
M.S. Grewal ◽  
S.A. Sastri ◽  
N.J. Grant

Currently there is a great interest in developing nickel base alloys with fine and uniform dispersion of stable oxide particles, for high temperature applications. It is well known that the high temperature strength and stability of an oxide dispersed alloy can be greatly improved by appropriate thermomechanical processing, but the mechanism of this strengthening effect is not well understood. This investigation was undertaken to study the dislocation substructures formed in beryllia dispersed nickel alloys as a function of cold work both with and without intermediate anneals. Two alloys, one Ni-lv/oBeo and other Ni-4.5Mo-30Co-2v/oBeo were investigated. The influence of the substructures produced by Thermo-Mechanical Processing (TMP) on the high temperature creep properties of these alloys was also evaluated.


Author(s):  
B. J. Hockey

Ceramics, such as Al2O3 and SiC have numerous current and potential uses in applications where high temperature strength, hardness, and wear resistance are required often in corrosive environments. These materials are, however, highly anisotropic and brittle, so that their mechanical behavior is often unpredictable. The further development of these materials will require a better understanding of the basic mechanisms controlling deformation, wear, and fracture.The purpose of this talk is to describe applications of TEM to the study of the deformation, wear, and fracture of Al2O3. Similar studies are currently being conducted on SiC and the techniques involved should be applicable to a wide range of hard, brittle materials.


Author(s):  
D. R. Clarke ◽  
G. Thomas

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.


Author(s):  
E. R. Kimmel ◽  
H. L. Anthony ◽  
W. Scheithauer

The strengthening effect at high temperature produced by a dispersed oxide phase in a metal matrix is seemingly dependent on at least two major contributors: oxide particle size and spatial distribution, and stability of the worked microstructure. These two are strongly interrelated. The stability of the microstructure is produced by polygonization of the worked structure forming low angle cell boundaries which become anchored by the dispersed oxide particles. The effect of the particles on strength is therefore twofold, in that they stabilize the worked microstructure and also hinder dislocation motion during loading.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


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