Simply equipped ε-Ga2O3 film/ZnO nanoparticle heterojunction for self-powered deep UV sensor

2021 ◽  
Author(s):  
Tong Mei ◽  
Shan Li ◽  
Shao-Hui Zhang ◽  
Yuanyuan Liu ◽  
Peigang Li
Keyword(s):  
Zno Nanoparticle ◽  
Zero Bias ◽  
Uv Sensor ◽  
Photoelectrical Properties ◽  
Decay Times ◽  
Solid Foundation ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Self Powered ◽  
Supply Mode

Abstract In this paper, a ε-Ga2O3 film/ZnO nanoparticle hybrid heterojunction deep ultraviolet (UV) photodetector is described for 254 nm wavelength sensing application. The constructed ε-Ga2O3/ZnO heterojunction photodetector can operate in dual modes which are power supply mode and self-powered mode. Under reverse 5 V bias with 254 nm light intensity of 500 μW/cm2, the photoresponsivity, specific detectivity and external quantum efficiency are 59.7 mA/W, 7.83×1012 Jones and 29.2%. At zero bias, the advanced ε-Ga2O3/ZnO photodetector performs decent self-powered photoelectrical properties with photo-to-dark current ratio of 1.28×105, on/off switching ratio of 3.22×104, rise/decay times of 523.1/31.7 ms, responsivity of 4.12 mA/W and detectivity of 2.24×1012 Jones. The prominent photodetection performance lays a solid foundation for ε-Ga2O3/ZnO heterojunction in deep UV sensor application.

scholarly journals Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amir Muhammad Afzal ◽  
In-Gon Bae ◽  
Yushika Aggarwal ◽  
Jaewoo Park ◽  
Hye-Ryeon Jeong ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Bias Voltage ◽  
High Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Zero Bias ◽  
Decay Times ◽  
Order Of Magnitude ◽  
Self Powered

AbstractHybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Specific Detectivity ◽  
Self Powered

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

scholarly journals Photovoltaic and flexible deep ultraviolet wavelength detector based on novel β-Ga2O3/muscovite heteroepitaxy

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Bhera Ram Tak ◽  
Ming-Min Yang ◽  
Yu-Hong Lai ◽  
Ying-Hao Chu ◽  
Marin Alexe ◽  
...  
Keyword(s):  
High Temperature ◽  
Human Life ◽  
Flexible Substrate ◽  
Life Quality ◽  
Trap States ◽  
Zero Bias ◽  
Uv Photodetectors ◽  
Muscovite Mica ◽  
Deep Ultraviolet ◽  
Self Powered

Abstract Flexible and self-powered deep ultraviolet (UV) photodetectors are pivotal for next-generation electronic skins to enrich human life quality. The fabrication of epitaxial β-Ga2O3 thin films is challenging on flexible substrates due to high-temperature growth requirements. Herein, β-Ga2O3 ($$\stackrel{-}{2}$$ 2 - 0 1) films are hetero-epitaxially grown on ultra-thin and environment-friendly muscovite mica which is the first time β-Ga2O3 epitaxy growth on any flexible substrate. Integration of Gallium oxide with muscovite enables high-temperature processing as well as excellent flexibility compared to polymer substrates. Additionally, the metal–semiconductor-metal (MSM) photodetector on β-Ga2O3 layer shows an ultra-low dark current of 800 fA at zero bias. The photovoltaic peak responsivity of 11.6 µA/W is obtained corresponding to very weak illumination of 75 μW/cm2 of 265 nm wavelength. Thermally stimulated current (TSC) measurements are employed to investigate the optically active trap states. Among these traps, trap with an activation energy of 166 meV dominates the persistence photocurrent in the devices. Finally, photovoltaic detectors have shown excellent photocurrent stability under bending induced stress up to 0.32%. Hence, this novel heteroepitaxy opens the new way for flexible deep UV photodetectors.

scholarly journals MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1672
Author(s):  
Umahwathy Sundararaju ◽  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Pin Jern Ker ◽  
P. Susthitha Menon
Keyword(s):  
Flexible Electronics ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Optical Power ◽  
Active Regions ◽  
Green Technology ◽  
Plasmonic Effect ◽  
Zero Bias ◽  
Electrical Signals ◽  
Self Powered

A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device’s photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.

Monodispersed hierarchical ZnGa2O4 microflowers for self-powered solar-blind detection

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Bias Voltage ◽  
Dark Current ◽  
Blind Detection ◽  
Current Ratio ◽  
Zero Bias ◽  
Single Crystalline ◽  
Short Response Time ◽  
Solar Blind ◽  
Self Powered

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.

A simple, repeatable and highly stable self-powered solar-blind photoelectrochemical-type photodetector using amorphous Ga2O3 films grown on 3D carbon fiber paper

2021 ◽  
Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Gallium Oxide ◽  
Three Dimensional ◽  
Next Generation ◽  
Solar Blind ◽  
Carbon Fiber Paper ◽  
Deep Ultraviolet ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...

Growth and theoretical study on the deep-ultraviolet transparent β-CsBa2(PO3)5 nonlinear optical crystal

CrystEngComm ◽  
2019 ◽  
Vol 21 (32) ◽  
pp. 4690-4695 ◽  
Author(s):  
Yang Zhong ◽  
Pai Shan ◽  
Tongqing Sun ◽  
Zhenpeng Hu ◽  
Hongde Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Nonlinear Optical ◽  
Theoretical Study ◽  
Nonlinear Optical Crystal ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Optical Crystal

A single crystal of β-CsBa2(PO3)5 has been successfully grown, and it exhibits a remarkable deep-UV cutoff edge of 168 nm.

A Study on the Characteristics of Perovskite/ZnO-Based Ultraviolet Sensors

2021 ◽  
Vol 21 (8) ◽  
pp. 4336-4340
Author(s):  
Seong Gwan Shin ◽  
Jaehyun Hur ◽  
Hyung Wook Choi
Keyword(s):  
Power Density ◽  
Type Material ◽  
Uv Sensor ◽  
External Bias ◽  
Perovskite Material ◽  
Self Powered

In this study, a UVC sensor was implemented using CH3NH3PbI3, a perovskite material. The UV sensor made with a p–i–n structure uses PEDOT:PSS as the p-type material and ZnO as the n-type material. The fabricated device shows a responsivity of 1.60 mA/W and a detectivity of 2.25×1010 Jones under 254 nm illumination with a power density of 1.02 mW/cm2 at 2 V. In addition, the manufactured UV sensor is a self-powered perovskite-based UV sensor that can operate without external bias. Therefore, this UVC sensor can have applications in various fields.

A self-powered β-Ga2O3/CsCu2I3 heterojunction photodiode responding to deep ultraviolet irradiation

2021 ◽  
Author(s):  
Ang Gao ◽  
Weiyu Jiang ◽  
Guoliang Ma ◽  
Zeng Liu ◽  
Shan Li ◽  
...  
Keyword(s):  
Ultraviolet Irradiation ◽  
Deep Ultraviolet ◽  
Self Powered

scholarly journals Low-noise tunable deep-ultraviolet supercontinuum laser

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Callum R. Smith ◽  
Asbjørn Moltke ◽  
Abubakar I. Adamu ◽  
Mattia Michieletto ◽  
Patrick Bowen ◽  
...  
Keyword(s):  
Spectral Region ◽  
Tunable Laser ◽  
Low Noise ◽  
Laser Source ◽  
Efficient Energy Transfer ◽  
Significant Step ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Nonlinear Compression

Abstract The realization of a table-top tunable deep-ultraviolet (UV) laser source with excellent noise properties would significantly benefit the scientific community, particularly within imaging and spectroscopic applications, where source noise has a crucial role. Here we provide a thorough characterization of the pulse-to-pulse relative intensity noise (RIN) of such a deep-UV source based on an argon (Ar)-filled anti-resonant hollow-core (AR HC) fiber. Suitable pump pulses are produced using a compact commercially available laser centered at 1030 nm with a pulse duration of 400 fs, followed by a nonlinear compression stage that generates pulses with 30 fs duration, 24.2 μJ energy at 100 kHz repetition rate and a RIN of < 1%. Pump pulses coupled into the AR HC fiber undergo extreme spectral broadening creating a supercontinuum, leading to efficient energy transfer to a phase-matched resonant dispersive wave (RDW) in the deep-UV spectral region. The center wavelength of the RDW could be tuned between 236 and 377 nm by adjusting the Ar pressure in a 140 mm length of fiber. Under optimal pump conditions the RIN properties were demonstrated to be exceptionally good, with a value as low as 1.9% at ~ 282 nm. The RIN is resolved spectrally for the pump pulses, the generated RDW and the broadband supercontinuum. These results constitute the first broadband RIN characterization of such a deep-UV source and provide a significant step forward towards a stable, compact and tunable laser source for applications in the deep-UV spectral region.

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