The impact of neutral impurity concentration on charge drift mobility in p-type germanium

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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Interfacial defect engineering and Photocatalysis Properties of hBN/MX2(M = Mo, W, and X = S, Se) Heterostructures

Chinese Physics B ◽

10.1088/1674-1056/ac43b2 ◽

2021 ◽

Author(s):

Zhihai Sun ◽

Jiaxi Liu ◽

Ying Zhang ◽

Ziyuan Li ◽

Leyu Peng ◽

...

Keyword(s):

Density Functional ◽

Density Functional Theory Calculations ◽

Band Alignment ◽

Type I ◽

Defect Engineering ◽

Wide Range ◽

Interfacial Defects ◽

Significant Research ◽

P Type ◽

The Impact

Abstract Van der Waals (VDW) heterostructures have attracted significant research interest due to their tunable interfacial properties and potential in a wide range of applications such as electronics, optoelectronic, and heterocatalysis. In this work, the impact of interfacial defects on the electronic structures and photocatalytic properties of hBN/MX2(M = Mo, W, and X = S, Se) are studied using density functional theory calculations. The results reveal that the band alignment of hBN/MX2 can be adjusted by introducing vacancies and atomic doping. The type-I band alignment of the host structure was maintained in the heterostructure with n-type doping in the hBN sublayer. Interestingly, the band alignment changed to the type-II heterostructrue as VB defect and p-type doping was introduced in the hBN sublayer. This could be profitable for the separation of photo-generated electron−hole pairs at the interfaces and is highly desired for heterostructure photocatalysis. In addition, two Z-type heterostructures including hBN(BeB)/MoS2, hBN(BeB)/MoSe2, and hBN(VN)/MoSe2 were achieved, showing reducing band gap and ideal redox potential for water splitting. Our results reveal the possibility of engineering the interfacial and photocatalysis properties of hBN/MX2 heterostructures via interfacial defects.

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Infrared Oscillators in Conventional Carbon Nanotube FET Technology

Journal of Circuits System and Computers ◽

10.1142/s021812661550053x ◽

2015 ◽

Vol 24 (04) ◽

pp. 1550053

Author(s):

Lobna I'msaddak ◽

Dalenda Ben Issa ◽

Abdennaceur Kachouri ◽

Mounir Samet ◽

Hekmet Samet

Keyword(s):

Power Consumption ◽

Response Time ◽

Oscillation Frequency ◽

Ring Oscillator ◽

Propagation Time ◽

Type C ◽

P Type ◽

Lc Tank ◽

The Impact ◽

Carbon Nanotube Fet

This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C GD and C GS ) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 μW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps).

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The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices

Journal of Materials Chemistry C ◽

10.1039/c5tc01898f ◽

2015 ◽

Vol 3 (34) ◽

pp. 8804-8809 ◽

Cited By ~ 22

Author(s):

Afzaal Qamar ◽

Hoang-Phuong Phan ◽

Jisheng Han ◽

Philip Tanner ◽

Toan Dinh ◽

...

Keyword(s):

Single Crystal ◽

Crystal Orientation ◽

Offset Voltage ◽

Device Geometry ◽

Stress Dependent ◽

P Type ◽

The Impact ◽

First Time

This communication reports for the first time, the impact of device geometry on the stress-dependent offset voltage of single crystal p-type 3C–SiC four terminal devices.

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Electrophoretic deposition of Au NPs on CNT networks for sensitive NO<sub>2</sub> detection

Journal of Sensors and Sensor Systems ◽

10.5194/jsss-3-245-2014 ◽

2014 ◽

Vol 3 (2) ◽

pp. 245-252 ◽

Cited By ~ 3

Author(s):

E. Dilonardo ◽

M. Penza ◽

M. Alvisi ◽

C. Di Franco ◽

D. Suriano ◽

...

Keyword(s):

Electron Microscopy ◽

Photoelectron Spectroscopy ◽

Gas Sensing ◽

Spectroscopic Characterization ◽

Core Diameter ◽

Au Nps ◽

Transmission Electron ◽

P Type ◽

Reducing Gases ◽

The Impact

Abstract. In the present study, Au-surfactant core-shell colloidal nanoparticles (NPs) with controlled dimension and composition were synthesized by sacrificial anode electrolysis. Transmission electron microscopy (TEM) revealed that Au NPs core diameter is between 8 and 12 nm, as a function of the electrosynthesis conditions. Moreover, surface spectroscopic characterization by X-ray photoelectron spectroscopy (XPS) analysis confirmed the presence of nanosized gold phase. Controlled amounts of Au NPs were then deposited electrophoretically on carbon nanotube (CNT) networked films. The resulting hybrid materials were morphologically and chemically characterized using TEM, SEM (scanning electron microscopy) and XPS analyses, which revealed the presence of nanoscale gold, and its successful deposition on CNTs. Au NP/CNT networked films were tested as active layers in a two-pole resistive NO2 sensor for sub-ppm detection in the temperature range of 100–200 °C. Au NP/CNT exhibited a p-type response with a decrease in the electrical resistance upon exposure to oxidizing NO2 gas and an increase in resistance upon exposure to reducing gases (e.g. NH3). It was also demonstrated that the sensitivity of the Au NP/CNT-based sensors depends on Au loading; therefore, the impact of the Au loading on gas sensing performance was investigated as a function of the working temperature, gas concentration and interfering gases.

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PROPERTIES OF GALLIUM INDIUM ANTIMONIDE

Canadian Journal of Physics ◽

10.1139/p57-010 ◽

1957 ◽

Vol 35 (1) ◽

pp. 91-97 ◽

Cited By ~ 8

Author(s):

J. S. Blakemore

Keyword(s):

Electrical Conductivity ◽

Hall Effect ◽

Indium Antimonide ◽

Impurity Concentration ◽

Optical Data ◽

Type Specimens ◽

Large Gradient ◽

Gallium Indium Antimonide ◽

P Type ◽

Electrical Data

Electrical conductivity and Hall effect are measured for p-type specimens of polycrystalline GaSb.InSb with impurity concentration about 1017 cm.−3. Analysis of these data suggests that μn/μp = 11, and that the intrinsic gap varies linearly with temperature from 0.265 ev. at 0° K. Measurement of the photoconductive limit at various temperatures shows that the gap widens on heating, though the electrical data seem difficult to reconcile with the large gradient of +1.1 × 10−3 ev./°C. indicated by the optical data.

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The Impact of Ions Migration on Performance and Long-term Stability of N-i-p Type Perovskite Solar Cells

10.29363/nanoge.nfm.2021.046 ◽

2021 ◽

Author(s):

Changzeng Ding ◽

Chang-Qi Ma

Keyword(s):

Solar Cells ◽

Perovskite Solar Cells ◽

Term Stability ◽

Long Term Stability ◽

P Type ◽

The Impact

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IMPACT OF WIDE BANDGAP P-TYPE NC-SI ON THE PERFORMANCE OF A-SI SOLAR CELLS

International Journal of Modern Physics B ◽

10.1142/s0217979202009457 ◽

2002 ◽

Vol 16 (01n02) ◽

pp. 57-63 ◽

Cited By ~ 1

Author(s):

X. DENG ◽

W. WANG ◽

S. HAN ◽

H. POVOLNY ◽

W. DU ◽

...

Keyword(s):

Solar Cells ◽

Density Functional ◽

Nanocrystalline Silicon ◽

Functional Approach ◽

Wide Bandgap ◽

Quantum Size ◽

Si Solar Cells ◽

P Type ◽

The Impact ◽

Hydrogenated Amorphous

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The p-layer consists of nanometer-sized Si Crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V oc = 1.045 V and FF = 70.3%, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells are discussed on the bases on the bases of the density-functional approach and the AMPS model.

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Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.587 ◽

2017 ◽

Vol 897 ◽

pp. 587-590 ◽

Cited By ~ 6

Author(s):

Sei Hyung Ryu ◽

Daniel J. Lichtenwalner ◽

Edward van Brunt ◽

Craig Capell ◽

Michael J. O’Loughlin ◽

...

Keyword(s):

High Temperature ◽

Carrier Lifetime ◽

Voltage Drop ◽

Current Gain ◽

Slight Reduction ◽

Temperature Oxidation ◽

Forward Voltage Drop ◽

P Type ◽

The Impact ◽

Lifetime Enhancement

The impact of the lifetime enhancement process using high temperature thermal oxidation method on 4H-SiC P-GTOs was investigated. 15 kV 4H-SiC P-GTOs with 140 μm thick drift layers, with and without 1450°C lifetime enhancement oxidation (LEO) process, were compared. The LEO process increased the average carrier lifetime in p-type epi layer from 0.9 μs to 6.25 μs, and it was observed that the effectiveness of the lifetime enhancement process was very sensitive to the doping concentration. The device with the LEO process showed a significant reduction in forward voltage drop and a substantially lower holding current, as expected from the carrier lifetime measurements. However, a slight reduction in blocking capability was also observed from the devices treated with LEO process. The common emitter current gain (β) of the wide base test NPN BJT was approximately 10X higher for the wafer with LEO process.

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