Dependency of current collapse on the device structure of GaN-based HEMTs

2015 ◽  
Author(s):  
Xingye Zhou ◽  
Zhihong Feng ◽  
Yuanjie Lv ◽  
Xin Tan ◽  
Yuangang Wang ◽  
...  
Keyword(s):  
Device Structure ◽  
Current Collapse

Recent Reliability Progress of GaN HEMT Power Amplifiers

2012 ◽  
Vol 1432 ◽  
Author(s):  
Toshihiro Ohki ◽  
Masahito Kanamura ◽  
Yoichi Kamada ◽  
Kozo Makiyama ◽  
Yusuke Inoue ◽  
...  
Keyword(s):  
High Efficiency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Device Structure ◽  
Passivation Film ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Specific Device ◽  
Gan Hemts ◽  
A Current

ABSTRACTIn this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure of GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer were used to suppress the trap-related phenomena, such as a current collapse. Gate edge oxidation is effective for reducing the gate leakage current. A Ta-based barrier metal was inserted between an ohmic electrode and interconnection metal for preventing increase in contact resistance. SiN of passivation film was optimized for reducing the current collapse of short-gatelength HEMTs.

scholarly journals Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 942
Author(s):  
Wei Lin ◽  
Maojun Wang ◽  
Haozhe Sun ◽  
Bing Xie ◽  
Cheng P. Wen ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Carbon Doping ◽  
High Electron ◽  
Induced Current ◽  
Power Devices ◽  
Device Structure ◽  
Carbon Doped ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
State Stress

Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to the notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded in the carbon-doped semi-insulating buffer is proposed to suppress the buffer-induced current collapse effect. Two-dimensional transient simulation was carried out to show the successful suppression of buffer-induced current collapse in the SCPG-HEMTs compared with conventional HEMTs. The mechanism of suppressing dynamic on-resistance degradation by ejecting holes from the SCPG into the high resistive buffer layer after off-state stress is illustrated based on energy band diagrams. This paper contributes an innovative device structure to potentially solve the buffer-induced degradation of the dynamic on-resistance in GaN power devices.

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Measurement of lattice parameter at the nanometer scale using convergent-beam microdiffraction from a thermal emission source

1993 ◽  
Vol 51 ◽  
pp. 690-691
Author(s):  
W. T. Pike
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Thermal Emission ◽  
Lattice Parameter ◽  
Scanning Transmission Electron Microscope ◽  
Emission Source ◽  
Device Structure ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Convergent Beam

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.

HVPE-GROWN AlGaN/GaN HEMTs

2003 ◽  
Vol 764 ◽  
Author(s):  
B. Luo ◽  
F. Ren ◽  
M. A. Mastro ◽  
D. Tsvetkov ◽  
A. Pechnikov ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Hydride Vapor Phase Epitaxy ◽  
Root Mean Square Roughness ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Collapse Characteristics ◽  
Capacitance Voltage ◽  
Source Current ◽  
Measurement Area

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Identifying the Root Cause of Source-Drain Leakage Caused Soft Fail in Advanced Bulk FinFET Devices

2018 ◽  
Author(s):  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chongkhiam Oh
Keyword(s):  
Careful Analysis ◽  
Physical Analysis ◽  
Device Structure ◽  
Tem Analysis ◽  
Root Cause ◽  
3D Architecture ◽  
Cause Of Failure ◽  
Electrical Analysis ◽  
Electrical Data

Abstract The paper reports the investigation on the root cause of source-drain leakage in bulk FinFET devices. While the failing device was readily isolated by nanoprobing technique and the electrical analysis pinpointed the potential defect location inside the Fin channel, the identification of physical root cause went through extreme challenges imposed by the tiny-sized device and the unique FinFET 3D architecture. The initial TEM analysis was misled by the projection of a species in the lamella surface and thus could not explain the electrical data. Careful analysis on the device structure was able to identify the origin of the species and led to the discovery of the actual root cause. This paper will provide the analysis details leading to the findings, and highlight the role of electrical understanding in not only providing guidance for physical analysis but also revealing the true root cause of failure in FinFET devices.

TECHNICAL AND ECONOMIC EVALUATION OF THE DEVELOPMENT OF A DEVICE FOR THE PREVENTION OF APNEA DURING PHYSIOLOGICAL SLEEP IN HUMANS

2020 ◽  
pp. 198-210
Author(s):  
Сергей Борисович Казаков ◽  
Дмитрий Михайлович Шишов ◽  
Антон Игоревич Ларин ◽  
Александр Петрович Николаев ◽  
Аза Валерьевна Писарева
Keyword(s):  
Sleep Apnea ◽  
Humidity Sensor ◽  
Lung Ventilation ◽  
High Price ◽  
Device Structure ◽  
Artificial Lung Ventilation ◽  
Exact Moment ◽  
The Cost ◽  
Technical Solutions ◽  
Physiological Sleep

В статье представлен обзор существующих технических решений в сфере мониторинга и предотвращения апноэ во сне. Произведён анализ существующих аппаратов для предотвращения апноэ, который показал, что на рынке присутствует большое количество импортных моделей, однако они имеют довольно высокую цену. Разработанный нами Российский аналог проектируемого аппарата, при схожих характеристиках, будет иметь более привлекательную цену, чем у импортных приборов. Интегрирование датчика влажности в персональную маску пациента даёт возможность отслеживать остановки дыхания пациента во время сна, и тем самым включать процесс принудительной подачи дыхательной смеси именно в тот момент, когда она необходима для устранения патологии. Целью научной работы является разработка конструкции прибора и создание алгоритма программы для управления аппарата искусственной вентиляции лёгких для предотвращения апноэ во сне. Показана разработка структуры устройства аппарата. Подобран компрессор и датчик влажности с обоснованными характеристиками для создания аппарата, а также основные элементы. Разработана конструкция корпуса аппарата и разработана компоновка. Выполнено технико-экономическое обоснование разработки аппаратно-программного комплекса для предотвращения апноэ во сне. Показано, что себестоимость готового изделия достаточно конкурентна The article presents an overview of existing technical solutions in the field of monitoring and prevention of sleep apnea. An analysis of existing devices for preventing apnea was made, which showed that there are a large number of imported models on the market, but they have a fairly high price. The Russian analog of the designed device developed by us, with similar characteristics, will have a more attractive price than that of imported devices. The integration of the humidity sensor into the patient's personal mask makes it possible to monitor the patient's breathing stops during sleep, and thus enable the process of forced delivery of the respiratory mixture at the exact moment when it is necessary to eliminate the pathology. The purpose of the research is to develop the device design and create a program algorithm for controlling the artificial lung ventilation device to prevent sleep apnea. The development of the device structure is shown. The compressor and humidity sensor with reasonable characteristics for creating the device, as well as the main elements are selected. The design of the device body and its layout were developed. A feasibility study for the development of a hardware and software system for preventing sleep apnea has been completed. It is shown that the cost of the finished product is quite competitive

scholarly journals Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 114
Author(s):  
Chang Lu ◽  
Qingjian Lu ◽  
Min Gao ◽  
Yuan Lin
Keyword(s):  
Optical Methods ◽  
Stimuli Responsive ◽  
Device Structure ◽  
Current State ◽  
Insulator Metal Transition ◽  
Potential Applications ◽  
Fs Laser ◽  
External Stimuli ◽  
Thz Applications ◽  
Thz Waves

The reversible and multi-stimuli responsive insulator-metal transition of VO2, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO2 films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO2 as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO2. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO2 component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports “quasi-simultaneous” IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO2 film and VO2 hybrid metamaterials is surveyed, highlighting that VO2 can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO2-based tuneable THz devices are discussed.

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