The Influence of NTP Reactor Geometry on H2 O2 Generation in Water

2020 ◽  
Author(s):  
Daniel E. Cretu ◽  
Dragos Astanei ◽  
Radu Burlica ◽  
Oana Beniuga ◽  
Dorin Tesoi
Keyword(s):  
Reactor Geometry

scholarly journals Methodology for the synthesis of methacrylate monomers using designed single mode microwave applicators

2019 ◽  
Vol 4 (8) ◽  
pp. 1472-1476 ◽  
Author(s):  
Adam A. Dundas ◽  
Andrew L. Hook ◽  
Morgan R. Alexander ◽  
Samuel W. Kingman ◽  
Georgios Dimitrakis ◽  
...  
Keyword(s):  
High Throughput ◽  
Single Mode ◽  
Microwave Reactor ◽  
Reactor Geometry ◽  
Single Well ◽  
Methacrylate Monomers ◽  
Microwave Applicators

A novel single-well prototype high throughput microwave reactor geometry has been produced and shown to be capable of synthesizing an array of non-commercially available methacrylate monomers.

scholarly journals Development of a tubular continuous flow reactor for the investigation of improved gas–solid interaction in photocatalytic CO2 reduction on TiO2

2019 ◽  
Vol 18 (2) ◽  
pp. 314-318 ◽  
Author(s):  
Martin Dilla ◽  
Ahmet E. Becerikli ◽  
Alina Jakubowski ◽  
Robert Schlögl ◽  
Simon Ristig
Keyword(s):  
Gas Phase ◽  
Continuous Flow ◽  
Flow Reactor ◽  
Tubular Reactor ◽  
Co2 Reduction ◽  
Continuous Flow Reactor ◽  
Reactor Geometry

Newly developed tubular reactor geometry allows intensive gas–solid interaction in photocatalytic gas-phase CO2 reduction.

Uniformity Control of 3-Inch GaN/InGaN Layers Grown in Planetary Reactors®

2000 ◽  
Vol 618 ◽  
Author(s):  
H. Protzmann ◽  
M. Luenenbuerger ◽  
M. Bremser ◽  
M. Heuken ◽  
H. Juergensen
Keyword(s):  
Process Development ◽  
Growth Control ◽  
Growth Conditions ◽  
Nitride Layer ◽  
Group Iii ◽  
Production Type ◽  
Reactor Geometry ◽  
Simple Scaling ◽  
Group Iii Nitride

ABSTRACTWe report on recent results obtained using an AIX 2400G3HT production type Planetary Reactor® in the 5×3 inch configuration for growth of typical group-III nitride layer structures consisting of GaN, InGaN and AlGaN. The optimum reactor geometry has been found by extensive modeling of the reactor design. Increased thermal management allows maximum reactor temperatures above 1400°C. As a consequence of extensive reactor modeling, the process transfer from 6×2 inch to 5×3 inch configuration was carried out by simple scaling of the corresponding process parameters of the 6×2 inch configuration. The scaling factor is calculated with respect to the changed reactor geometry. We used optical reflectrometry for in-situ growth control during this process development and could confirm the theoretical scaling requirements for obtaining identical growth conditions as compared to the 6×2 inch reactor configuration. This is verified by the generation of identical reflectance spectrum features. This important issue of in-situ control is discussed in detail. The TMGa efficiency could be kept at about 17%. Switching to the 8×3 inch configuration the efficiency increases up to about 27%, which is an improvement of 63% as compared to the 6×2 inch configuration

Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
S. A. Safvi ◽  
N. R. Perkins ◽  
M. N. Horton ◽  
A. Thon ◽  
D. Zhi ◽  
...  
Keyword(s):  
Numerical Model ◽  
Vapor Phase ◽  
Growth Rates ◽  
Ammonia Concentration ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Crystal Quality ◽  
Group V ◽  
Reactor Geometry

AbstractA numerical model of an experimental gallium nitride horizontal vapor phase epitaxy reactor is presented. The model predicts the flow, concentration profiles, and growth rates. The effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated. Numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and inferior crystal quality. A low ammonia concentration is correlated to deposition of polycrystalline films. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.

Mechanical, Thermal and Flow Dynamics Issues in Compound Semiconductor MOCVD Reactor Design

1994 ◽  
Vol 340 ◽  
Author(s):  
A.I. Gurary ◽  
G.S. Tompa ◽  
K. Moy ◽  
P. Zawadzki
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Rotating Disk ◽  
Compound Semiconductor ◽  
Element Analysis ◽  
Long Wavelength ◽  
Mocvd Reactor ◽  
Reactor Geometry

ABSTRACTIn recent years Metalorganic Chemical Vapor Deposition (MOCVD) becomes a key epitaxial process for a variety of compound semiconductor devices such as: GaAs/AlGaAs lasers, HEMTs, LEDs, photocathodes, solar cells, and MESFETs; InP/InGaAsP long wavelength lasers and detectors; InP/InGaAs quantum wells and detectors, etc. Development of reliable, high throughput equipment is a major task in the implementation of MOCVD into cost-effective manufacturings. We have used Computational Fluid Dynamics (CFD) and Finite Element Analysis (FEA) software to model thermal, structural, and flow processes for the scaling of EMCORE vertical, high speed rotating disk reactor (RDR) to large dimensions (four 4″ wafers located on 12″ wafer carrier). Flow modeling was used to determine basic reactor geometry and the relation between process parameters such as total reactant flow, temperature, pressure, and rotation speed. Thermal and structural analysis was used to produce a uniform substrate temperature, avoid reactor overheating and decrease thermal stress. Flow and temperature distribution predicted by the modeling were found to be well correlated with experimental results.

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