BGA Package for DDR3 Interface – 4 vs 6 Layers Design Strategy and Electrical Performance Comparison

2020 ◽  
Author(s):  
Valentin Rossi ◽  
Cristina Somma ◽  
Giovanni Graziosi ◽  
Aurora Sanna
Keyword(s):  
Design Strategy ◽  
Performance Comparison ◽  
Electrical Performance ◽  
Bga Package

scholarly journals Electrical Performance of Polymer-Insulated Rail Brackets of DC Transit Subjected to Lightning Induced Overvoltage

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1684
Author(s):  
Farah Asyikin Abd Rahman ◽  
Mohd Zainal Abidin Ab Kadir ◽  
Ungku Anisa Ungku Amirulddin ◽  
Miszaina Osman
Keyword(s):  
Performance Comparison ◽  
Absorption Capacity ◽  
Electrical Performance ◽  
Sensitivity Analyses ◽  
Lightning Strike ◽  
Rail Transit ◽  
Energy Absorption Capacity ◽  
Urban Transit ◽  
Residual Voltage ◽  
Reinforced Plastic

The fourth rail transit is an interesting topic to be shared and accessed by the community within that area of expertise. Several ongoing works are currently being conducted especially in the aspects of system technical performances including the rail bracket component and the sensitivity analyses on the various rail designs. Furthermore, the lightning surge study on railway electrification is significant due to the fact that only a handful of publications are available in this regard, especially on the fourth rail transit. For this reason, this paper presents a study on the electrical performance of a fourth rail Direct Current (DC) urban transit affected by an indirect lightning strike. The indirect lightning strike was modelled by means of the Rusck model and the sum of two Heidler functions. The simulations were carried out using the EMTP-RV software which included the performance comparison of polymer-insulated rail brackets, namely the Cast Epoxy (CE), the Cycloaliphatic Epoxy A (CEA), and the Glass Reinforced Plastic (GRP) together with the station arresters when subjected by 30 kA (5/80 µs) and 90 kA (9/200 µs) lightning currents. The results obtained demonstrated that the GRP material has been able to slightly lower its induced overvoltage as compared to other materials, especially for the case of 90 kA (9/200 µs), and thus serves better coordination with the station arresters. This improvement has also reflected on the recorded residual voltage and energy absorption capacity of the arrester, respectively.

System Co-Design Modeling Methodology of a High Speed (25Gbps) Multi-Rate 4-Channel Retimer: Simulation to Measurement Correlation

2018 ◽  
Vol 2018 (1) ◽  
pp. 000180-000185
Author(s):  
Tony Tang ◽  
Bridger Wray ◽  
Rajen Murugan
Keyword(s):  
Modeling And Simulation ◽  
Insertion Loss ◽  
Power Supply ◽  
High Speed ◽  
Return Loss ◽  
Electrical Performance ◽  
Laboratory Measurements ◽  
Simulation Methodology ◽  
Modeling Methodology ◽  
Bga Package

Abstract In this paper we detail the system (viz. silicon-package-pcb) electrical co-design of a 130nm BiCMOS high-speed (25Gbps) 4-channel multi-rate retimer, packaged in a small 6-mm × 6-mm FC BGA package, with integrated advanced signal conditioning circuitries. Electrical optimization of the silicon-package-pcb over the high speed channels, to achieve desired performance, was achieved through a coupled circuit-to-electromagnetic co-design modeling and simulation methodology. Key figure of merits for system electrical performance (viz. insertion loss, return loss, crosstalk/isolation, jitter, and power supply inductance and resistance parasitics, among others) are modeled and analyzed. Laboratory measurements on a retimer are presented that validate the integrity of the modeling methodology. Good correlation between modeling methodology and laboratory measurements is achieved.

Scalable Electrical Model and Performance Analysis of a Novel Bar TSV Structure

2015 ◽  
Vol 645-646 ◽  
pp. 1024-1031
Author(s):  
Zhen Song Li ◽  
Min Miao ◽  
Shao Chun Yang ◽  
Da Cheng Yang
Keyword(s):  
Minimum Distance ◽  
Performance Comparison ◽  
Electrical Performance ◽  
Design Parameters ◽  
Electrical Model ◽  
And Performance ◽  
Array Density ◽  
Configuration Simulation ◽  
Design Options ◽  
Solver Performance

A novel Bar TSV(B-TSV) structure, formed by two semi-cylinders combining with a quadrangular is studied in this paper. This B-TSV structure extends the TSV design options by introducing new design parameters. The scalable electrical model of B-TSV is proposed and the effects of design parameters, such as the side length of quadrangular and the minimum distance between TSVs are investigated and concluded by a 3D electromagnetic solver. Performance comparison between B-TSV and the traditional cylindrical one is also provided by simulation under the Ground-Signal-Ground configuration. Simulation results show that B-TSV has better performance than the traditional one, and can be used to increase the TSV array density without degrading the electrical performance of TSV system.

scholarly journals Wearable Passive E-Textile UHF RFID Tag Based on a Slotted Patch Antenna with Sewn Ground and Microchip Interconnections

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Johanna Virkki ◽  
Zhigang Wei ◽  
Aruhan Liu ◽  
Leena Ukkonen ◽  
Toni Björninen
Keyword(s):  
Patch Antenna ◽  
Performance Comparison ◽  
Electrical Performance ◽  
Uhf Rfid ◽  
Patch Type ◽  
Rfid Tag ◽  
Practical Applications ◽  
Textile Materials ◽  
Passive Uhf Rfid ◽  
Electromagnetic Performance

We present a wearable passive UHF RFID tag based on a slotted patch antenna comprising only textile materials (e-textile, textile substrate, and conductive yearn). As a novel manufacturing approach, we realize the patch-to-ground and antenna-to-IC interfaces using only conductive thread and a sewing machine. We outline the electromagnetic optimization of the antenna for body-worn operation through simulations and present a performance comparison between the e-textile tag and a tag produced using regular electronics materials and methods. The measured results show that the textile tag achieves the electrical performance required in practical applications and that the slotted patch type antenna provides stable electromagnetic performance in different body-worn configurations.

Thermally and Electrically Enhanced Wirebond BGA

2013 ◽  
Vol 2013 (1) ◽  
pp. 000478-000483
Author(s):  
Burton Carpenter ◽  
Boon Yew Low ◽  
Leo M. Higgins ◽  
Sriram Neelakantan ◽  
Robert Wenzel ◽  
...  
Keyword(s):  
Flip Chip ◽  
Hold Time ◽  
Thermal Interface Material ◽  
Thermal Dissipation ◽  
Electrical Performance ◽  
Package Design ◽  
Die Attach ◽  
Bga Package ◽  
End Use ◽  
Set Up

Next-generation processors continue to demand more thermal and electrical performance from the package. Frequently, devices are designed into Flip Chip (FC) packages where the previous generations were in Wire Bond (WB) because FC typically provides superior thermal dissipation and lower package electrical parasitics than WB packages. However, FC packages usually have higher costs for mid-range IO (500–800). An Enhanced WB BGA package has been designed with improved thermal and electrical performance compared to the industry standard TEPBGA-2 (Thermally Enhanced PBGA type 2). The 500μm barrier of mold compound between the die and heatspreader in the TEPBGA-2 is a major impediment to heat flow out of the package. By contrast, the Enhanced WB package uses post-mold attachment of a heat spreader that is adhesively bonded to the mold cap and thermally coupled to the die using a 40μm TIM (thermal interface material). Improvements to substrate design rules and the die attach process that enabled the Enhanced WB design to shorten bond wires by 40% and improved electrical performance. Package thermal resistance, Theta-Ja, was verified by simulation and measurement to be 3C°/W lower than TEPBGA-2, that dissipates up to 15W in some end-use applications, approximately 2× the performance of TEPBGA-2. DDR set-up and hold time showed 30ps improvement by both simulation and measurement. This paper will present the package design, thermal and electrical simulation and measurement results.

DDRII Memory Packages Electrical Performance Comparison of COSBGA, TFBGA, and Standard TSOPII

2005 ◽  
Author(s):  
Bryan Hsieh ◽  
Kevin Chiang ◽  
Y. P. Wang ◽  
C. S. Hsiao
Keyword(s):  
Random Access ◽  
Memory Device ◽  
Performance Comparison ◽  
Consumer Electronics ◽  
Memory Storage ◽  
Electrical Performance ◽  
Crosstalk Noise ◽  
Bga Packages ◽  
Fine Pitch ◽  
Memory Dynamic

The memory storage technology revolution has taken the consumer electronics by a storm in just two years. The volatile memory Dynamic Random Access Memory (DRAM) for PC and notebook computing and gaming are increasing in density and speed. With all these improvement, the memory device packaging technology is also evolving rapidly, from the leadframe packages to BGA packages [2]. Under high frequency operation, the parasitics associated with package will significantly degrade the package performance. The DRAM packages are used primarily in the fabrication of DIMM modules that are inserted to the motherboards in PC and notebook computers. With newer DRAM technology in double date rate (DDR) and its second generation, DDR2, to be deployed just two years, it has higher clock rate and I/O number. Packages therefore are changing form the leadframe TSOP type 2 to faster CSPs such as fine pitch BGA (FBGA) and chip on substrate BGA (COSBGA). This paper is focused the COSBGA package [3,4]. In this paper, the packages electrical model have been established and performs signal integrity (SI) simulation. The COSBGA has smallest parasitics when comparison with other two packages. This paper also compares the performance of the COSBGA, TFBGA and TSOPII from crosstalk noise, time skew, insertion loss and return loss for IC designer reference.

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