DDRII Memory Packages Electrical Performance Comparison of COSBGA, TFBGA, and Standard TSOPII

2005 ◽  
Author(s):  
Bryan Hsieh ◽  
Kevin Chiang ◽  
Y. P. Wang ◽  
C. S. Hsiao
Keyword(s):  
Random Access ◽  
Memory Device ◽  
Performance Comparison ◽  
Consumer Electronics ◽  
Memory Storage ◽  
Electrical Performance ◽  
Crosstalk Noise ◽  
Bga Packages ◽  
Fine Pitch ◽  
Memory Dynamic

The memory storage technology revolution has taken the consumer electronics by a storm in just two years. The volatile memory Dynamic Random Access Memory (DRAM) for PC and notebook computing and gaming are increasing in density and speed. With all these improvement, the memory device packaging technology is also evolving rapidly, from the leadframe packages to BGA packages [2]. Under high frequency operation, the parasitics associated with package will significantly degrade the package performance. The DRAM packages are used primarily in the fabrication of DIMM modules that are inserted to the motherboards in PC and notebook computers. With newer DRAM technology in double date rate (DDR) and its second generation, DDR2, to be deployed just two years, it has higher clock rate and I/O number. Packages therefore are changing form the leadframe TSOP type 2 to faster CSPs such as fine pitch BGA (FBGA) and chip on substrate BGA (COSBGA). This paper is focused the COSBGA package [3,4]. In this paper, the packages electrical model have been established and performs signal integrity (SI) simulation. The COSBGA has smallest parasitics when comparison with other two packages. This paper also compares the performance of the COSBGA, TFBGA and TSOPII from crosstalk noise, time skew, insertion loss and return loss for IC designer reference.

scholarly journals Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Mingqun Qi ◽  
Cuiping Guo ◽  
Meihan Zeng
Keyword(s):  
Oxygen Vacancy ◽  
Hafnium Oxide ◽  
Memory Performance ◽  
Random Access ◽  
Memory Device ◽  
Electrical Performance ◽  
Forming Process ◽  
Conductive Filament ◽  
Functional Layer ◽  
Free Process

Switching between high resistance states and low resistance states in a resistive random access memory device mainly depends on the formation and fracture of conductive filaments. However, the randomness of the conductive filament growth and the potential breakdown of the large voltage in the forming process will lead to unstable resistive switching and memory performance. We studied the possible natural forming process of conductive filaments for intrinsic defects under the influence of top electrode material based on the structure of W/HfO2-x/Pt. Such a simple device shows long retention time and great endurance cycles. The dendritic oxygen vacancy (VO) conductive filament model was constructed, and the dynamic VO migration under directional external bias was described according to the characteristic electrical performance. In addition, we also explored the relationship between the multilevel resistance and the evolution of a dendritic VO conductive filament, signifying the potential application of multilevel storage in the future. Furthermore, a Ag/HfO2-x/Ag selector was fabricated to assemble the memory device in wire connection which exhibits the potential of eliminating leaky current in the memory array. The connection also indicates that the fabrication process of the 1S1R structure can be simplified by using the same functional layer.

scholarly journals Electrical Performance of Polymer-Insulated Rail Brackets of DC Transit Subjected to Lightning Induced Overvoltage

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1684
Author(s):  
Farah Asyikin Abd Rahman ◽  
Mohd Zainal Abidin Ab Kadir ◽  
Ungku Anisa Ungku Amirulddin ◽  
Miszaina Osman
Keyword(s):  
Performance Comparison ◽  
Absorption Capacity ◽  
Electrical Performance ◽  
Sensitivity Analyses ◽  
Lightning Strike ◽  
Rail Transit ◽  
Energy Absorption Capacity ◽  
Urban Transit ◽  
Residual Voltage ◽  
Reinforced Plastic

The fourth rail transit is an interesting topic to be shared and accessed by the community within that area of expertise. Several ongoing works are currently being conducted especially in the aspects of system technical performances including the rail bracket component and the sensitivity analyses on the various rail designs. Furthermore, the lightning surge study on railway electrification is significant due to the fact that only a handful of publications are available in this regard, especially on the fourth rail transit. For this reason, this paper presents a study on the electrical performance of a fourth rail Direct Current (DC) urban transit affected by an indirect lightning strike. The indirect lightning strike was modelled by means of the Rusck model and the sum of two Heidler functions. The simulations were carried out using the EMTP-RV software which included the performance comparison of polymer-insulated rail brackets, namely the Cast Epoxy (CE), the Cycloaliphatic Epoxy A (CEA), and the Glass Reinforced Plastic (GRP) together with the station arresters when subjected by 30 kA (5/80 µs) and 90 kA (9/200 µs) lightning currents. The results obtained demonstrated that the GRP material has been able to slightly lower its induced overvoltage as compared to other materials, especially for the case of 90 kA (9/200 µs), and thus serves better coordination with the station arresters. This improvement has also reflected on the recorded residual voltage and energy absorption capacity of the arrester, respectively.

scholarly journals Implications of NVM Based Storage on Memory Subsystem Management

2020 ◽  
Vol 10 (3) ◽  
pp. 999
Author(s):  
Hyokyung Bahn ◽  
Kyungwoon Cho
Keyword(s):  
Random Access ◽  
Disk Drive ◽  
Main Memory ◽  
Memory Storage ◽  
Storage Device ◽  
Storage Devices ◽  
Large Memory ◽  
Memory Subsystems ◽  
Non Volatile Memory ◽  
Management Techniques

Recently, non-volatile memory (NVM) has advanced as a fast storage medium, and legacy memory subsystems optimized for DRAM (dynamic random access memory) and HDD (hard disk drive) hierarchies need to be revisited. In this article, we explore the memory subsystems that use NVM as an underlying storage device and discuss the challenges and implications of such systems. As storage performance becomes close to DRAM performance, existing memory configurations and I/O (input/output) mechanisms should be reassessed. This article explores the performance of systems with NVM based storage emulated by the RAMDisk under various configurations. Through our measurement study, we make the following findings. (1) We can decrease the main memory size without performance penalties when NVM storage is adopted instead of HDD. (2) For buffer caching to be effective, judicious management techniques like admission control are necessary. (3) Prefetching is not effective in NVM storage. (4) The effect of synchronous I/O and direct I/O in NVM storage is less significant than that in HDD storage. (5) Performance degradation due to the contention of multi-threads is less severe in NVM based storage than in HDD. Based on these observations, we discuss a new PC configuration consisting of small memory and fast storage in comparison with a traditional PC consisting of large memory and slow storage. We show that this new memory-storage configuration can be an alternative solution for ever-growing memory demands and the limited density of DRAM memory. We anticipate that our results will provide directions in system software development in the presence of ever-faster storage devices.

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge

Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device

2021 ◽  
Vol 12 (7) ◽  
pp. 1876-1884
Author(s):  
Mousam Charan Sahu ◽  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Sanjeev K. Gupta ◽  
Rajeev Ahuja ◽  
...  
Keyword(s):  
Random Access ◽  
Charge Injection ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Anatase Tio2 ◽  
Access Memory ◽  
Conducting Filament ◽  
Valence Change

Effect of Varying Memory Device Architectures on the Electrical Properties of P(VDF/TrFE)(72/28) Copolymer Thin Film

2008 ◽  
Vol 54 ◽  
pp. 491-496 ◽  
Author(s):  
Chang Woo Choi ◽  
Arun Anand Prabu ◽  
Sun Yoon ◽  
Yu Min Kim ◽  
Kap Jin Kim
Keyword(s):  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Random Access ◽  
Drain Current ◽  
Random Copolymer ◽  
Memory Device ◽  
Channel Length ◽  
Memory Retention ◽  
Voltage Measurement ◽  
Electrical Measurements

In this study, the dipole switching and non-volatile memory functionality of poly(vinylidene fluoride-trifluoroethylene) (PVDF/TrFE)(72/28 mol%) random copolymer ultrathin films were analyzed. PVDF/TrFE(72/28) used as ferroelectric insulator in varying memory device architectures such as metal-ferroelectric polymer-metal (MFM), MF-insulator-semiconductor (MFIS), MIS and ferroelectric field-effect transistors (FeFET) were examined using different electrical measurements. A maximum data writing speed of 1.69 MHz was calculated from the switching time measured using MFM architecture. Compared to MFM, MFIS device architecture was found to be more suitable for distinguishing the ‘0’ and ‘1’ state using the capacitance-voltage measurement. With FeFET, the measured drain current (Id) as well as its memory window increased with decreasing channel length, thereby enabling the easier identification of ‘0’ and ‘1’ state comparable to the MFIS case. The data obtained from this study will be useful in the fabrication of non-volatile random access memory (NVRAM) devices operating at lower voltage with faster data R/W/E speed and memory retention capability.

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