Measurement of the Dielectric Constant of Anisotropic Dielectric Materials Using the Degenerated Modes of a Spherical Cavity

1980 ◽  
Author(s):  
Ingo Wolff ◽  
Norbert Schwab
Keyword(s):  
Dielectric Constant ◽  
Spherical Cavity ◽  
Dielectric Materials ◽  
Anisotropic Dielectric

Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

2002 ◽  
Vol 716 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
A. Mallikarjunan ◽  
A. Kumar ◽  
J. Fortin ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Ion Implantation ◽  
Dielectric Materials ◽  
Dramatic Improvement ◽  
Force Microscopy ◽  
Low Dielectric ◽  
Quantitative Measurements ◽  
Hardness Increase ◽  
Xerogel Films ◽  
Ion Species

AbstractThin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Enhanced dielectric properties and thermostability in polyimide composites with core-shell structured polyimide@BaTiO3 nanoparticles

2021 ◽  
pp. 095400832199352
Author(s):  
Wei Deng ◽  
Guanguan Ren ◽  
Wenqi Wang ◽  
Weiwei Cui ◽  
Wenjun Luo
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Energy Density ◽  
Breakdown Strength ◽  
In Situ Polymerization ◽  
Dielectric Materials ◽  
High Energy ◽  
Amic Acid ◽  
High Energy Density ◽  
Core Shell

Polymer composites with high dielectric constant and thermal stability have shown great potential applications in the fields relating to the energy storage. Herein, core-shell structured polyimide@BaTiO3 (PI@BT) nanoparticles were fabricated via in-situ polymerization of poly(amic acid) (PAA) and the following thermal imidization, then utilized as fillers to prepare PI composites. Increased dielectric constant with suppressed dielectric loss, and enhanced energy density as well as heat resistance were simultaneously realized due to the presence of PI shell between BT nanoparticles and PI matrix. The dielectric constant of PI@BT/PI composites with 55 wt% fillers increased to 15.0 at 100 Hz, while the dielectric loss kept at low value of 0.0034, companied by a high energy density of 1.32 J·cm−3, which was 2.09 times higher than the pristine PI. Moreover, the temperature at 10 wt% weight loss reached 619°C, demonstrating the excellent thermostability of PI@BT/PI composites. In addition, PI@BT/PI composites exhibited improved breakdown strength and toughness as compared with the BT/PI composites due to the well dispersion of PI@BT nanofillers and the improved interfacial interactions between nanofillers and polymer matrix. These results provide useful information for the structural design of high-temperature dielectric materials.

Dielectric Characterization of Polyceram Films

1990 ◽  
Vol 180 ◽  
Author(s):  
G. Teowee ◽  
J.M. Boulton ◽  
H.H. Fox ◽  
A. Koussa ◽  
T. Gudgel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Polyethylene Oxide ◽  
Dielectric Materials ◽  
Inorganic Materials ◽  
Functionalized Polymers ◽  
Multifunctional Materials ◽  
Dielectric Characterization ◽  
Silicon Alkoxides ◽  
Tan Δ

ABSTRACTPolycerams are an emergent class of hybrid, multifunctional materials which combine the properties of organic and inorganic materials. Films have been prepared from silicon alkoxides and reactive, functionalized polymers such as triethoxysilyl modified polybutadiene (MPBD), (N-triethoxysilylpropyl)O polyethylene oxide urethane (MPEOU) and trimethoxysilylpropyl substituted polyethyleneimine (MPEI). Characterization of dielectric constant and tan δ of the films has been carried out over a range of frequency from 500 Hz to 100 kHz; and the results are used to consider the potential of Polycerams as dielectric materials.

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

Sorption of Water by Rubber

1938 ◽  
Vol 11 (3) ◽  
pp. 485-500
Author(s):  
R. L. Taylor ◽  
A. R. Kemp
Keyword(s):  
Dielectric Constant ◽  
Vapor Pressure ◽  
Test Specimen ◽  
Dielectric Materials ◽  
Sorption Coefficient ◽  
Electrical Instability ◽  
Specimen Temperature ◽  
Pressure Chemical ◽  
Direct Current Resistance ◽  
Current Resistance

Abstract THE presence of water is one of the principal causes of electrical instability in dielectric materials, often resulting in large variations in direct current resistance, dielectric constant, and power factor. A knowledge of the laws governing the sorption of water is therefore of considerable interest to the electrical and communications industries. The various investigators in the field of sorption of water by rubber have not reported their findings in a manner which will permit of consistent interpretation and correlation for engineering uses. Insufficient attention has been given to the effect of such factors as shape of test specimen, temperature control, variations in vapor pressure, chemical changes in the test specimen, etc. Consequently no sorption coefficient suitable for application to practical problems and no measure of the rate of sorption which will permit an adequate comparison of one material with another is now available. The purpose of this article is to describe the relation between rate of sorption and some of these variables, such as thickness of test specimen, temperature, and vapor pressure, and to show how sorption tests can be applied to certain practical problems. It is not the purpose to present a survey of the literature. The word “sorption” is used in conformity with current phraseology to mean the combined effect of adsorption and absorption.

Intrinsic low dielectric behaviour of a highly thermally stable Sr-based metal–organic framework for interlayer dielectric materials

2014 ◽  
Vol 2 (19) ◽  
pp. 3762-3768 ◽  
Author(s):  
Muhammad Usman ◽  
Cheng-Hua Lee ◽  
Dung-Shing Hung ◽  
Shang-Fan Lee ◽  
Chih-Chieh Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Organic Framework ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Water Molecules ◽  
Compound A ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Metal Organic ◽  
Organic Framework

A Sr-based metal–organic framework exhibits an intrinsic low dielectric constant after removing the water molecules. A low dielectric constant and high thermal stability make this compound a candidate for use as a low-k material.

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

scholarly journals Iterative Analysis of Dielectric Constant of Patch Antenna Substrate at UHF Band

2018 ◽  
Vol 7 (2.16) ◽  
pp. 7
Author(s):  
Amish Kumar Jha ◽  
Bharti Gupta Gupta ◽  
Preety D Swami
Keyword(s):  
Dielectric Constant ◽  
Material Properties ◽  
Patch Antenna ◽  
Dielectric Materials ◽  
Substrate Material ◽  
Frequency Range ◽  
Shape Model ◽  
Iterative Analysis ◽  
Working Frequency ◽  
Simulation Results

This paper presents an investigation of effect of substrate material properties on the performance of antenna. The simulations are tested for 30 different dielectric materials on the basic RPA antenna model as well as on the most common U shape model using CST Microwave Studio. Two designs are proposed. On the basis of simulation results it has been concluded that for the first design the best material is which has a dielectric constant of 2.7 (𝜀r = 2.7) with bandwidth improvements of around 69.33% to 88.6% as compared to the most frequently used materials at present. For the second design the best result is obtained for the material that has dielectric constant in the range 2.0 to 2.7.  For a material having dielectric constant of 2.1 (𝜀r = 2.1) bandwidth improvement of around 11.74% with respect to RT Duroid was observed. For the second design, radiations from all other materials were not available in the working frequency range of 1GHz to 6GHz.  

scholarly journals Anomalous localized resonance using a folded geometry in three dimensions

2013 ◽  
Vol 469 (2154) ◽  
pp. 20130048 ◽  
Author(s):  
Habib Ammari ◽  
Giulio Ciraolo ◽  
Hyeonbae Kang ◽  
Hyundae Lee ◽  
Graeme W. Milton
Keyword(s):  
Dielectric Constant ◽  
Dielectric Material ◽  
Two Dimensions ◽  
Three Dimensions ◽  
Dielectric Tensor ◽  
Anisotropic Dielectric ◽  
Plasmonic Structure ◽  
Negative Constant ◽  
Loss Parameter

If a body of dielectric material is coated by a plasmonic structure of negative dielectric material with non-zero loss parameter, then cloaking by anomalous localized resonance (CALR) may occur as the loss parameter tends to zero. If the coated structure is circular (two dimensions) and the dielectric constant of the shell is a negative constant (with loss parameter), then CALR occurs, and if the coated structure is spherical (three dimensions), then CALR does not occur. The aim of this paper is to show that CALR takes place if the spherical coated structure has a specially designed anisotropic dielectric tensor. The anisotropic dielectric tensor is designed by unfolding a folded geometry.

B-O Bond Character and Microwave Dielectric Properties of (1-x)CaTiO3-xCa(Zn1/3Nb2/3)O3 Perovskite Ceramics

2009 ◽  
Vol 421-422 ◽  
pp. 69-72
Author(s):  
Jie Shen ◽  
Wen Chen ◽  
Jing Zhou ◽  
Jie Zhu ◽  
Qiong Lei
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Dielectric Materials ◽  
Solid State Reaction Method ◽  
Dielectric Constants ◽  
Identical Result ◽  
Microwave Dielectric ◽  
Calculation Results ◽  
The Relationship

The relationship between the character of the B-site cation–oxygen bond and the microwave dielectric properties in perovskites dielectric materials was studied in this paper. The atomic net charge of CaTiO3 (CT) and Ca(Zn1/3Nb2/3)O3 (CZN) was calculated respectively. The calculating result implies that the covalency of B-O bonds in CZN is stronger than that in CT. This predicted that the dielectric constant and loss of the ceramics will decrease after CZN incorporated in CT. To confirme the prediction, (1-x)CT-xCZN microwave dielectric ceramics were prepared by solid state reaction method with ZnNb2O6 as precursor. The structure analysis in terms of tolerance factor gives an identical result as calculation. The microwave dielectric properties, such as dielectric constants, Q×f values and τf were studied as a function of composition. With x increasing from 0.2 to 0.8, the dielectric constant linearly decreases from 109 to 49.37, the Q×f value increases from 8,340 to 13,200 GHz, and τf decreases from 321 to -18 ppm/°C. The properties trends are consistent with the previous calculation results, and confirm the relationship between the character of B-O bond and dielectric properties.

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