A Broadband Model of Stacking TSV Channels for Nondestructive Defect Localization in 3D ICs and Microsystem

Author(s):  
Chenbing Qu ◽  
Liwei Wang ◽  
Si Chen ◽  
Chen Sun ◽  
Zhiwei Fu ◽  
...  
Keyword(s):  
3D Ics ◽  
2015 ◽  
Vol 135 (7) ◽  
pp. 744-751
Author(s):  
Tetsuya Kobayashi ◽  
Nanako Niioka ◽  
Masa-aki Fukase ◽  
Atsushi Kurokawa

2018 ◽  
Author(s):  
Ke-Ying Lin ◽  
Chih-Yi Tang ◽  
Yu Chi Wang

Abstract The paper demonstrates the moving of lock-in thermography (LIT) spot location by adjusting the lock-in frequency from low to high. Accurate defect localization in stacked-die devices was decided by the fixed LIT spot location after the lock-in frequency was higher than a specific value depending on the depth of the defect in the IC. Physical failure analysis was performed based on LIT results, which provided clear physical defect modes of the stacked-die devices.


Author(s):  
Kristopher D. Staller

Abstract Cold temperature failures are often difficult to resolve, especially those at extreme low levels (< -40°C). Momentary application of chill spray can confirm the failure mode, but is impractical during photoemission microscopy (PEM), laser scanning microscopy (LSM), and multiple point microprobing. This paper will examine relatively low-cost cold temperature systems that can hold samples at steady state extreme low temperatures and describe a case study where a cold temperature stage was combined with LSM soft defect localization (SDL) to rapidly identify the cause of a complex cold temperature failure mechanism.


Author(s):  
Magdalena Sienkiewicz ◽  
Philippe Rousseille

Abstract This paper presents a case study on scan test reject in a mixed mode IC. It focuses on the smart use of combined mature FA techniques, such as Soft Defect Localization (SDL) and emission microscopy (EMMI), to localize a random scan test anomaly at the silicon bulk level.


Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.


Author(s):  
Kristopher D. Staller ◽  
Corey Goodrich

Abstract Soft Defect Localization (SDL) is a dynamic laser-based failure analysis technique that can detect circuit upsets (or cause a malfunctioning circuit to recover) by generation of localized heat or photons from a rastered laser beam. SDL is the third and seldom used method on the LSM tool. Most failure analysis LSM sessions use the endo-thermic mode (TIVA, XIVA, OBIRCH), followed by the photo-injection mode (LIVA) to isolate most of their failures. SDL is seldom used or attempted, unless there is a unique and obvious failure mode that can benefit from the application. Many failure analysts, with a creative approach to the analysis, can employ SDL. They will benefit by rapidly finding the location of the failure mechanism and forgoing weeks of nodal probing and isolation. This paper will cover circuit signal conditioning to allow for fast dynamic failure isolation using an LSM for laser stimulation. Discussions of several cases will demonstrate how the laser can be employed for triggering across a pass/fail boundary as defined by voltage levels, supply currents, signal frequency, or digital flags. A technique for manual input of the LSM trigger is also discussed.


Author(s):  
Arjan Mels ◽  
Frank Zachariasse

Abstract Although RIL, SDL and LADA are slightly different, the main operating principle is the same and the theory for defect localization presented in this paper is applicable to all three methods. Throughout this paper the authors refer to LADA, as all experimental results in this paper were obtained with a 1064nm laser on defect free circuits. This paper first defines mathematically what 'signal strength' actually means in LADA and then demonstrates a statistical model of the LADA situation that explains the optimal conditions for signal collection and the parameters involved. The model is tested against experimental data and is also used to optimise the acquisition time. Through this model, equations were derived for the acquisition time needed to discern a LADA response from the background noise. The model offers a quantitative tool to estimate the feasibility of a given LADA measurement and a guide to optimising the required experimental set-up.


Author(s):  
Hui Peng Ng ◽  
Ghim Boon Ang ◽  
Chang Qing Chen ◽  
Alfred Quah ◽  
Angela Teo ◽  
...  

Abstract With the evolution of advanced process technology, failure analysis is becoming much more challenging and difficult particularly with an increase in more erratic defect types arising from non-visual failure mechanisms. Conventional FA techniques work well in failure analysis on defectively related issue. However, for soft defect localization such as S/D leakage or short due to design related, it may not be simple to identify it. AFP and its applications have been successfully engaged to overcome such shortcoming, In this paper, two case studies on systematic issues due to soft failures were discussed to illustrate the AFP critical role in current failure analysis field on these areas. In other words, these two case studies will demonstrate how Atomic Force Probing combined with Scanning Capacitance Microscopy were used to characterize failing transistors in non-volatile memory, identify possible failure mechanisms and enable device/ process engineers to make adjustment on process based on the electrical characterization result. [1]


Author(s):  
Kevin Sanchez ◽  
Romain Desplats ◽  
Philippe Perdu ◽  
Felix Beaudoin ◽  
Sylvain Dudit ◽  
...  

Abstract In this paper we report on the application field of Dynamic Laser Stimulation (DLS) techniques to Integrated Circuit (IC) analysis. The effects of thermal and photoelectric laser stimulation on ICs are presented. Implementations, practical considerations and applications are presented for techniques based on functional tests like Soft Defect Localization (SDL) and Laser Assisted Device Alteration (LADA). A new methodology, Delay Variation Mapping (DVM), will also be presented and discussed.


Author(s):  
Clifford Howard ◽  
Anusha Weerakoon ◽  
Diana M. Mitro ◽  
Dawn Glaeser

Abstract OBIRCH analysis is a useful technique for defect localization not only for parametric failures, but also for functional analysis. However, OBIRCH results do not always identify the exact defect location. OBIRCH analysis results must be used in conjunction with other analysis tools and techniques to successfully identify defect locations.


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