Basic study on cooling performance of pulsating airflow around components mounted in high-density packaging electronic equipment (effects of shapes of components on cooling performance)

Author(s):  
Takashi Fukue ◽  
Koichi Hirose ◽  
Hidemi Shirakawa
2021 ◽  
Author(s):  
Tetsushi Fukuda ◽  
Yukio Masuda ◽  
Takashi Fukue ◽  
Yasuhiro Sugimoto ◽  
Tomoyuki Hatakeyama ◽  
...  

Abstract This study describes the deterioration of a small axial fan’s supply flow rate in high-density packaging electronic equipment. A cooling fan flow rate can be predicted by its P-Q curve, which shows a relationship between a pressure rise at a fan (ΔP) and a supply flow rate (Q). However, in high-density packaging electronic equipment, the fan performance is affected by the mounting components around the fans, and the accurate prediction of the supply flow rate becomes difficult. This paper tried to do flow visualization around a small axial cooling fan’s impellers when the obstruction was mounted in front of the fan through CFD analysis. A relationship between the supply flow rate by the fan and the flow pattern around the impellers was investigated while changing the distance between the test fan and the obstruction. Through this study, the following results can be obtained. The fan’s flow is stable in the rotating stall region and the higher flow rate operating points regardless of whether or without the obstruction. At the lower flow rate conditions, the formation of a complex unsteady flow is reproduced. As the flow rate decreases, the flow’s separation point becomes closer to the leading edge of the impeller. In the case of obstruction, the change of the flow pattern causes a larger attack angle. As a result, fan performance is degraded.


Author(s):  
Takashi Fukue ◽  
Tomoyuki Hatakeyama ◽  
Masaru Ishizuka ◽  
Koichi Hirose ◽  
Kazuma Obata ◽  
...  

This study describes an application of the flow resistance network analysis to thermal design of fan-cooled electronic equipment. Especially, a modeling method of the flow resistance network was investigated. Current electronic equipment becomes smaller and thinner while their functions become more complex. As a result, flow passages for cooling air become complex. In order to simulate the complex airflow in high-density packaging electronic equipment by using the flow resistance network, we tried to develop the flow resistance network by support of the 3D-CFD analysis. A test model which simulates high-density packaging electronic equipment is prepared and the flow resistance network analysis is applied to the prediction of flow rate distribution in the model. Through the investigation, we obtained information and future problems about the development of the flow resistance network in electronic equipment with lots of electrical components.


2005 ◽  
Vol 297-300 ◽  
pp. 837-843
Author(s):  
Takashi Hasegawa ◽  
Masumi Saka

Solder is the most frequently used alloy, which serves as the bonding metal for electronics components. Recently, the interconnected bump is distinctly downsizing its bulk along with the integration of high-density packaging. The evaluation of electromigration damage for solder bumps is indispensable. Hence, it is fairly urgent to understand the mechanism of the electromigration damage to be capable of securing reliability of the solder bump and ultimately predicting its failure lifetime. Electromigration pattern in multi-phase material is determined by the combination of current density, temperature and current-applying time. In this paper, diagram of electromigration pattern (DEP) in solders is presented, where both of eutectic Pb-Sn and Pb-free solders are treated. DEP gives the basis for discussing and predicting the electromigration damage in solders.


2017 ◽  
Vol 26 (1) ◽  
pp. 69-77 ◽  
Author(s):  
Eun Kyu Park ◽  
Bam Bit Jung ◽  
Woo Zin Choi ◽  
Sung Kwun Oh

2002 ◽  
Vol 748 ◽  
Author(s):  
Yoshiomi Hiranaga ◽  
Kenjiro Fujimoto ◽  
Yasuo Wagatsuma ◽  
Yasuo Cho ◽  
Atsushi Onoe ◽  
...  

ABSTRACTScanning Nonlinear Dielectric Microscopy (SNDM) is the method for observing ferroelectric polarization distribution, and now, its resolution has become to the sub-nanometer order, which is much higher than other scanning probe microscopy (SPM) methods for the same purpose. Up to now, we have studied high-density ferroelectric data storage using this microscopy. In this study, we have conducted fundamental experiments of nano-sized inverted domain formation in LiTaO3 single, and successfully formed inverted dot array with the density of 1.5 Tbit/inch2.


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