Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs

2019 ◽  
Author(s):  
Daniel B. Habersat ◽  
Ronald Green ◽  
Aivars J. Lelis
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Transient Effects ◽  
Power Mosfets ◽  
Temperature Bias ◽  
Bias Stress

Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 757-762
Author(s):  
Daniel B. Habersat ◽  
Aivars Lelis ◽  
Ronald Green
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
State Of The Art ◽  
Charge Trapping ◽  
High Temperature Stress ◽  
Test Method ◽  
Power Mosfets ◽  
Temperature Bias ◽  
Bias Stress

Our results reinforce the notion of the need for an improved high-temperature gate bias (HTGB) test method — one which discourages the use of slow (greater than ~1 ms) threshold-voltage (VT) measurements at elevated temperatures and includes biased cool-down if room temperature measurements are performed, to ensure that any ephemeral effects during the high-temperature stress are observed. The paper presents a series of results on both state-of-the-art commercially-available devices as well as older vintage devices that exhibit enhanced charge-trapping effects. Although modern devices appear to be robust, it is important to ensure that any new devices released commercially, especially by new vendors, are properly evaluated for VT stability.

High temperature bias-stress-induced instability in power trench-gated MOSFETs

2014 ◽  
Vol 54 (2) ◽  
pp. 374-380 ◽  
Author(s):  
J. Hao ◽  
M. Rioux ◽  
S.A. Suliman ◽  
O.O. Awadelkarim
Keyword(s):  
High Temperature ◽  
Temperature Bias ◽  
Bias Stress

Time-Dependent Leakage Current of BaSrTiO3 Film under High Temperature Bias Stress

1998 ◽  
Vol 37 (Part 2, No. 10A) ◽  
pp. L1162-L1164 ◽  
Author(s):  
Kikuo Yamabe ◽  
Minoru Inomoto ◽  
Keitaro Imai
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Time Dependent ◽  
Temperature Bias ◽  
Bias Stress

Demonstration of SiC Vertical Trench JFET Reliability

2012 ◽  
Vol 717-720 ◽  
pp. 1017-1020 ◽  
Author(s):  
Kevin M. Speer ◽  
Kiran Chatty ◽  
Volodymyr Bondarenko ◽  
David C. Sheridan ◽  
Kevin Matocha ◽  
...  
Keyword(s):  
High Temperature ◽  
Circuit Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Measured Parameter ◽  
System Operation ◽  
Dislocation Glide ◽  
Temperature Bias ◽  
Bias Stress

This paper demonstrates the reliability of SiC vertical trench junction field-effect transistors (VJFET). Measurements are shown which prove that the device’s intrinsic gate-source pn junction is immune to degradation associated with recombination-enhanced dislocation glide. And after subjecting VJFETs to 1,000 hours of high-temperature bias stress, no measured parameter deviated from datasheet specifications. These results reflect the maturity and reliability of SemiSouth’s SiC VJFET technology, as well as tight process control over device parameters that are critical to circuit design and long-term system operation.

scholarly journals Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

2020 ◽  
Vol 1004 ◽  
pp. 433-438
Author(s):  
Patrick Fiorenza ◽  
Mario Alessandrino ◽  
Beatrice Carbone ◽  
Clarice Di Martino ◽  
Alfio Russo ◽  
...  
Keyword(s):  
High Temperature ◽  
Scanning Probe Microscopy ◽  
Reverse Bias ◽  
Dielectric Breakdown ◽  
Threading Dislocation ◽  
Power Mosfets ◽  
Bias Stress ◽  
Local Modification ◽  
Minority Carriers

In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified.

ABOUT HEAT CAPACITY OF TITANIUM CARBIDE TiCx

2019 ◽  
pp. 56-66
Author(s):  
I. Khidirov ◽  
V. V. Getmanskiy ◽  
A. S. Parpiev ◽  
Sh. A. Makhmudov
Keyword(s):  
Heat Capacity ◽  
High Temperature ◽  
Titanium Carbide ◽  
Temperature Dependence ◽  
Carbon Concentration ◽  
Room Temperature ◽  
Thermodynamic Characteristics ◽  
Liquid Nitrogen Temperature ◽  
Analysis Data ◽  
Thermal Excitation

This work relates to the field of thermophysical parameters of refractory interstitial alloys. The isochoric heat capacity of cubic titanium carbide TiCx has been calculated within the Debye approximation in the carbon concentration  range x = 0.70–0.97 at room temperature (300 K) and at liquid nitrogen temperature (80 K) through the Debye temperature established on the basis of neutron diffraction analysis data. It has been found out that at room temperature with decrease of carbon concentration the heat capacity significantly increases from 29.40 J/mol·K to 34.20 J/mol·K, and at T = 80 K – from 3.08 J/mol·K to 8.20 J/mol·K. The work analyzes the literature data and gives the results of the evaluation of the high-temperature dependence of the heat capacity СV of the cubic titanium carbide TiC0.97 based on the data of neutron structural analysis. It has been proposed to amend in the Neumann–Kopp formula to describe the high-temperature dependence of the titanium carbide heat capacity. After the amendment, the Neumann–Kopp formula describes the results of well-known experiments on the high-temperature dependence of the heat capacity of the titanium carbide TiCx. The proposed formula takes into account the degree of thermal excitation (a quantized number) that increases in steps with increasing temperature.The results allow us to predict the thermodynamic characteristics of titanium carbide in the temperature range of 300–3000 K and can be useful for materials scientists.

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