PVD TiN hardmask for copper metallization

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

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Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0517 ◽

2006 ◽

Author(s):

Cheng-Piao Lin ◽

Chin-Hsin Tang ◽

Cheng-Hsu Wu ◽

Cheng-Chun Ting

Keyword(s):

Copper Metallization ◽

Physical Analysis ◽

Electrical Characteristics ◽

Gate Leakage Current ◽

Data Retention ◽

Simulation Data ◽

Failure Data ◽

Dual Gate ◽

Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

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Copper metallization of electrodes for silicon heterojunction solar cells: Process, reliability and challenges

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2021.110993 ◽

2021 ◽

Vol 224 ◽

pp. 110993

Author(s):

Jian Yu ◽

Junjun Li ◽

Yilin Zhao ◽

Andreas Lambertz ◽

Tao Chen ◽

...

Keyword(s):

Solar Cells ◽

Copper Metallization ◽

Heterojunction Solar Cells ◽

Process Reliability ◽

Silicon Heterojunction Solar Cells

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Refractory metal carbide based diffusion barriers for copper metallization

10.1109/iitc.2001.930060 ◽

2001 ◽

Author(s):

S.C. Sun ◽

H.Y. Tsai ◽

S.J. Wang

Keyword(s):

Refractory Metal ◽

Diffusion Barriers ◽

Copper Metallization ◽

Metal Carbide

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Low-Temperature LPCVD MEMS Technologies

MRS Proceedings ◽

10.1557/proc-729-u5.1 ◽

2002 ◽

Vol 729 ◽

Cited By ~ 6

Author(s):

Roger T. Howe ◽

Tsu-Jae King

Keyword(s):

Silicon Germanium ◽

Polycrystalline Silicon ◽

Rf Mems ◽

Sige Layer ◽

Copper Metallization ◽

Si Films ◽

P Type ◽

Mems Process ◽

Post Deposition

AbstractThis paper describes recent research on LPCVD processes for the fabrication of high-quality micro-mechanical structures on foundry CMOS wafers. In order to avoid damaging CMOS electronics with either aluminum or copper metallization, the MEMS process temperatures should be limited to a maximum of 450°C. This constraint rules out the conventional polycrystalline silicon (poly-Si) as a candidate structural material for post-CMOS integrated MEMS. Polycrystalline silicon-germanium (poly-SiGe) alloys are attractive for modular integration of MEMS with electronics, because they can be deposited at much lower temperatures than poly-Si films, yet have excellent mechanical properties. In particular, in-situ doped p-type poly-SiGe films deposit rapidly at low temperatures and have adequate conductivity without post-deposition annealing. Poly-Ge can be etched very selectively to Si, SiGe, SiO2 and Si3N4 in a heated hydrogen peroxide solution, and can therefore be used as a sacrificial material to eliminate the need to protect the CMOS electronics during the MEMS-release etch. Low-resistance contact between a structural poly-SiGe layer and an underlying CMOS metal interconnect can be accomplished by deposition of the SiGe onto a typical barrier metal exposed in contact windows. We conclude with directions for further research to develop poly-SiGe technology for integrated inertial, optical, and RF MEMS applications.

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Preparation of W-W 2 B composites from W-BN powders and properties of W-B-N barrier for copper metallization

International Journal of Refractory Metals and Hard Materials ◽

10.1016/j.ijrmhm.2017.12.007 ◽

2018 ◽

Vol 72 ◽

pp. 223-227 ◽

Cited By ~ 1

Author(s):

E. Ivanov ◽

E. del Rio

Keyword(s):

Copper Metallization

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The Study of Fluorinated Amorphous Carbon as Low-K Dielectric Material and its Interface with Copper Metallization

MRS Proceedings ◽

10.1557/proc-565-203 ◽

1999 ◽

Vol 565 ◽

Cited By ~ 1

Author(s):

N. Ariel ◽

M. Eizenberg ◽

E. Y. Tzou

Keyword(s):

Amorphous Carbon ◽

Nuclear Reactions ◽

Dielectric Material ◽

Copper Metallization ◽

Limiting Factor ◽

Adhesion Promoter ◽

Adhesion Promotion ◽

High Resolution Tem ◽

Rc Delay ◽

Low K

AbstractIn order to achieve better performance of devices, the interconnects RC delay time, the limiting factor of the device speed today, must be reduced. This calls for a new interconnect stack: lower resistivity Copper and low k materials (k<3) as dielectrics.Fluorinated amorphous carbon (a-F:C) prepared by HDP- CVD is an attractive candidate as a low-k material. In this work we have studied the film, its stability and its interface with Copper metallization. The high density plasma CVD process resulted in a film which contains C and F at a ratio of 1:0.6 as determined by Nuclear Reactions Analysis. XPS analysis of the Cls transition indicated four types of bonds: C-C, C-CF, CF, and CF2. X-ray diffraction as well as high resolution TEM analyses proved that the film was amorphous at least up to 500°C anneal. For various applications, the advantage of adding a thin bi-layer of a-SiC/SiOx for adhesion promotion purposes was demonstrated. In addition, the interface of a-F:C and the adhesion promoter layer with Ta, TaN and Cu was studied. No interdiffusion was observed by SIMS after 400°C annealing. 500°C annealing caused F outdiffusion from the film and Cu diffusion into the adhesion promoter layer.

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