A High-Performance Embedded SiC Power Module Based on a DBC-Stacked Hybrid Packaging Structure

Author(s):  
Zhizhao Huang ◽  
Cai Chen ◽  
Yue Xie ◽  
Yiyang Yan ◽  
Yong Kang ◽  
...  
2019 ◽  
Vol 2019 (1) ◽  
pp. 000557-000562
Author(s):  
Zhiwei Wang ◽  
Chi Zhang ◽  
Zhizhao Huang ◽  
Cai Chen ◽  
Fang Luo

Abstract This paper proposed a novel stacked DBCs hybrid package structure and designed a low inductive 1200V/120A SiC half-bridge power module based on the package structure. Using the multi-layer structure of DBC+DBC, the main loop parasitic inductance of the power module has been reduced to 1.8nH by optimizing the three-dimensional commutation loop and using the mutual inductance cancellation concept. The module was designed and fabricated, the low inductance characteristics of the module was verified by dual pulse testing and power testing. Dynamic test results show that the module can switch safely with a low overvoltage under zero ohm external drive resistance, and the switching loss is reduced by 57% compared to commercial modules.


2021 ◽  
Author(s):  
Kuo-Shu Kao ◽  
Sheng-Tsai Wu ◽  
Ji-Yuan Syu ◽  
Tao-Chih Chang ◽  
Chang-Chun Lee

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.


Author(s):  
Shiladitya Chakravorty ◽  
Bahgat Sammakia ◽  
Varaprasad Calmidi

Improved performance of semiconductor devices in recent years has resulted in consequent increase in power dissipation. Hence thermal characterization of components becomes important from an overall thermal design perspective of the system. This study looks at a high performance non-isolated point of load power module (a DC to DC converter) meant for advanced computing and server applications. Thermal characteristics of the module were experimentally analyzed by placing the power module on a bare test board (with no insulation) inside a wind tunnel with thermocouples attached to it. There were three devices on this module that dissipate power. There were two FETs (Field Effect Transistors) and an inductor which can be considered as sources. The consolidated power dissipation from the module was calculated by measuring the input voltage and input current while keeping the output voltage and current constant. Temperatures at various points on the module and the test card were recorded for different air flow velocities and overall power dissipation. Subsequently this set up was numerically analyzed using a commercially available computational fluid dynamics (CFD) code with the objective of comparing the results with experimental data previously obtained.


2015 ◽  
Vol 743 ◽  
pp. 270-276
Author(s):  
X.L. Lin ◽  
D.F. Dong ◽  
Wei Hu Zhou

High performance servo system is the basis of fast tracking and precision measurement of laser tracker, and drive circuit is the hardware guarantee of the control algorithm in the system. This paper is concerned with the designed drive circuit of Permanent Magnet Synchronous Motor (PMSM). First, control system model of PMSM is introduced, as well as the PM10CSJ060 Intelligent Power Module (IPM) working principle. Then the drive circuit based on IPM is designed and applied in servo system. Experimental results show that the drive circuit is reliable and stable, with strong anti-interference function, can meet the performance requirements of laser trackers.


2021 ◽  
Vol 18 (3) ◽  
pp. 123-136
Author(s):  
Tzu-Hsuan Cheng ◽  
Kenji Nishiguchi ◽  
Yoshi Fukawa ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya ◽  
...  

Abstract Wide-Band Gap (WBG) power devices have become a promising option for high-power applications due to the superior material properties over traditional Silicon. To not limit WBG devices’ mother nature, a rugged and high-performance power device packaging solution is necessary. This study proposes a Double-Side Cooled (DSC) 1.2 kV half-bridge power module having dual epoxy resin insulated metal substrate (eIMS) for solving convectional power module challenges and providing a cost-effective solution. The thermal performance outperforms traditional Alumina (Al2O3) Direct Bonded Copper (DBC) DSC power module due to moderate thermal conductivity (10 W/mK) and thin (120 mm) epoxy resin composite dielectric working as the IMS insulation layer. This novel organic dielectric can withstand high voltage (5 kVAC @ 120 μm) and has a Glass Transition Temperature (Tg) of 300°C, which is suitable for high-power applications. In the thermal-mechanical modeling, the organic DSC power module can pass the thermal cycling test over 1,000 cycles by optimizing the mechanical properties of the encapsulant material. In conclusion, this article not only proposes a competitive organic-based power module but also a methodology of evaluation for thermal and mechanical performance.


2020 ◽  
Vol 2020 (1) ◽  
pp. 000277-000281
Author(s):  
Tzu-Hsuan Cheng ◽  
Kenji Nishiguchi ◽  
Yoshi Fukawa ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya ◽  
...  

Abstract Silicon-Carbide (SiC) power devices have become a promising option for traditional Silicon (Si) due to the superior material properties. To fully take advantage of the SiC devices, a high-performance power device packaging solution is necessary. This study proposes a cost-effective double-sided cooled (DSC) 1.2 kV SiC half-bridge power module using organic epoxy-resin composite dielectric (ERCD) substrates. The high mechanical and thermal performance of the power module is achieved by the low-modulus, moderate thermal conductivity, and relatively thin (120 μm) layer of ERCD material compared with traditional metal-clad ceramic approaches. This novel organic dielectric can withstand high voltage (5 kV @ 120 μm) and operate up to 250°C continuously, which is indispensable for high power applications. The thermal modeling results show that the equivalent thermal resistance junction-to-case (Rjc_eq) of the DSC power module using dual direct bonded copper (DBC) is 17% higher than the dual ERCD configuration. Furthermore, a non-insulated DSC power module concept is proposed for maximizing thermal performance by considering thermal vias in the ERCD substrate and direct-soldered heat sink. A thought process for optimization of thermal via design is demonstrated and it shows up to 24% of improvement on thermal performance compared with the insulated DSC power module.


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