A High Performance Full SiC Power Module Based On a Novel Stacked DBCs Hybrid Packaging Structure
Abstract This paper proposed a novel stacked DBCs hybrid package structure and designed a low inductive 1200V/120A SiC half-bridge power module based on the package structure. Using the multi-layer structure of DBC+DBC, the main loop parasitic inductance of the power module has been reduced to 1.8nH by optimizing the three-dimensional commutation loop and using the mutual inductance cancellation concept. The module was designed and fabricated, the low inductance characteristics of the module was verified by dual pulse testing and power testing. Dynamic test results show that the module can switch safely with a low overvoltage under zero ohm external drive resistance, and the switching loss is reduced by 57% compared to commercial modules.