Design and Analysis of Dual-Metal-Gate Double-Cavity Charge-Plasma-TFET as a Label Free Biosensor

2020 ◽  
Vol 20 (23) ◽  
pp. 13969-13975 ◽  
Author(s):  
Mahalaxmi ◽  
Bibhudendra Acharya ◽  
Guru Prasad Mishra
Keyword(s):  
Label Free ◽  
Metal Gate ◽  
Charge Plasma ◽  
Dual Metal

A charge-plasma-based dual-metal-gate recessed-source/drain dopingless junctionless transistor with enhanced analog and RF performance

2020 ◽  
Vol 19 (3) ◽  
pp. 1085-1099
Author(s):  
Prateek Kishor Verma ◽  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Santosh Kumar Gupta
Keyword(s):  
Metal Gate ◽  
Charge Plasma ◽  
Junctionless Transistor ◽  
Dual Metal ◽  
Rf Performance ◽  
A Charge

Metal Wet Etch Process Development for Dual Metal Gate CMOS

2005 ◽  
Vol 8 (12) ◽  
pp. G333 ◽  
Author(s):  
Muhammad Mustafa Hussain ◽  
Naim Moumen ◽  
Joel Barnett ◽  
Jason Saulters ◽  
David Baker ◽  
...  
Keyword(s):  
Process Development ◽  
Metal Gate ◽  
Dual Metal ◽  
Wet Etch

Effect of Au-Al Dual-Metal Gate on 3D Double-Gate Junctionless Transistor Performance

2021 ◽  
pp. 421-429
Author(s):  
Achinta Baidya ◽  
Rajesh Saha ◽  
Amarnath Gaini ◽  
Chaitali Koley ◽  
Somen Debnath ◽  
...  
Keyword(s):  
Double Gate ◽  
Metal Gate ◽  
Junctionless Transistor ◽  
Dual Metal

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

2004 ◽  
Vol 462-463 ◽  
pp. 15-18 ◽  
Author(s):  
Chang Seo Park ◽  
Byung Jin Cho ◽  
N. Balasubramanian ◽  
Dim-Lee Kwong
Keyword(s):  
Aluminum Nitride ◽  
Buffer Layer ◽  
Feasibility Study ◽  
Nitride Film ◽  
Metal Gate ◽  
Thin Aluminum ◽  
Dual Metal

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

2002 ◽  
Vol 81 (22) ◽  
pp. 4192-4194 ◽  
Author(s):  
Tae-Ho Cha ◽  
Dae-Gyu Park ◽  
Tae-Kyun Kim ◽  
Se-Aug Jang ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal ◽  
Thermal Stability Of

scholarly journals Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

2015 ◽  
Vol 62 (1) ◽  
pp. 44-51 ◽  
Author(s):  
Giovanni Betti Beneventi ◽  
Elena Gnani ◽  
Antonio Gnudi ◽  
Susanna Reggiani ◽  
Giorgio Baccarani
Keyword(s):  
Metal Gate ◽  
Dual Metal ◽  
Tcad Simulations

scholarly journals Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 282 ◽  
Author(s):  
Liang Dai ◽  
Weifeng Lü ◽  
Mi Lin
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Voltage ◽  
Metal Gate ◽  
Random Dopant Fluctuation ◽  
Computer Aided ◽  
Dual Metal ◽  
Aided Design ◽  
Random Dopant

We investigate the effect of random dopant fluctuation (RDF)-induced variability in n-type junctionless (JL) dual-metal gate (DMG) fin field-effect transistors (FinFETs) using a 3D computer-aided design simulation. We show that the drain voltage (VDS) has a significant impact on the electrostatic integrity variability caused by RDF and is dependent on the ratio of gate lengths. The RDF-induced variability also increases as the length of control gate near the source decreases. Our simulations suggest that the proportion of the gate metal near the source to the entire gate should be greater than 0.5.

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